Semiconductor device
US-12519487-B2 · Jan 6, 2026 · US
by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT
by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT · Cooperative Patent Classification (CPC)
Electric circuits, power, telecommunications, and semiconductors.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | H03K3/021 |
| Official title | by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT |
| Display label | by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT |
| Total patents | 55 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is declining.
| Year | Patents |
|---|---|
| 2015 | 1 |
| 2016 | 1 |
| 2017 | 3 |
| 2018 | 5 |
| 2019 | 12 |
| 2020 | 5 |
| 2021 | 8 |
| 2022 | 4 |
| 2023 | 6 |
| 2024 | 5 |
| 2025 | 4 |
| 2026 | 1 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Integrated circuit device and method
US-2025364996-A1 · Nov 27, 2025 · US
Integrated circuit device and method
US-2025309902-A1 · Oct 2, 2025 · US
Time-walk correction using multiple energy measurements
US-12399286-B2 · Aug 26, 2025 · US
Signal generation apparatus capable of rejecting noise
US-12237837-B2 · Feb 25, 2025 · US
Signal generating device, bandgap reference device and method of generating temperature-dependent signal
US-12174653-B2 · Dec 24, 2024 · US
Semiconductor device
US-2024305282-A1 · Sep 12, 2024 · US
Circuit pre-charging
US-2024223164-A1 · Jul 4, 2024 · US
Time-walk correction using multiple energy measurements
US-2024210575-A1 · Jun 27, 2024 · US
Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistor
US-11868868-B2 · Jan 9, 2024 · US
Signal generating device, bandgap reference device and method of generating temperature-dependent signal
US-2023367353-A1 · Nov 16, 2023 · US
Method for implementing adaptive stochastic spiking neuron based on ferroelectric field effect transistor
US-2023316052-A1 · Oct 5, 2023 · US
Signal generating device, bandgap reference device and method of generating temperature-dependent signal
US-11768513-B2 · Sep 26, 2023 · US
Signal generation apparatus capable of rejecting noise
US-2023208410-A1 · Jun 29, 2023 · US
CMOS laddered inverter ring oscillator
US-11664787-B2 · May 30, 2023 · US
High voltage resistive output stage circuit
US-11631573-B2 · Apr 18, 2023 · US
Neuron circuit using p-n-p-n diode without external bias voltages
US-11531872-B2 · Dec 20, 2022 · US
Signal generating device, bandgap reference device and method of generating temperature-dependent signal
US-2022382314-A1 · Dec 1, 2022 · US
Signal generating device and method of generating temperature-dependent signal
US-11493946-B2 · Nov 8, 2022 · US
Cmos laddered inverter ring oscillator
US-2022286116-A1 · Sep 8, 2022 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC H03K3/021?
- CPC H03K3/021 is the Cooperative Patent Classification code for “by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT.”
- How many patents are filed under CPC H03K3/021 (by the use, as active elements, of more than one type of element or means, e.g. BIMOS, composite devices such as IGBT)?
- Our database includes 55 publications tagged with this CPC code.
- Is patent activity under CPC H03K3/021 growing?
- Publication counts under this code: 5 in 2024 vs 4 in 2025 (latest complete years).