Bandgap reference circuit with beta-compensation

US9568929B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-9568929-B2
Application numberUS-201414444890-A
CountryUS
Kind codeB2
Filing dateJul 28, 2014
Priority dateJul 28, 2014
Publication dateFeb 14, 2017
Grant dateFeb 14, 2017

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Abstract

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Described are apparatuses and methods for generating a temperature-stabilized reference voltage on a semiconductor chip. An apparatus may include a differential amplifier including a first input, a second input, and an output. The apparatus may further include a first bipolar junction transistor (BJT) coupled to the first input; a second BJT coupled to the second input; and beta compensation circuitry, coupled to the first BJT and the second BJT, to regulate a first collector current of the first BJT to be independent of a first current gain of the first BJT and a second collector current of the second BJT to be independent of a second current gain of the second BJT. Other embodiments may be described and/or claimed.

First claim

Opening claim text (preview).

I claim: 1. A circuit, comprising: a differential amplifier comprising a first input, a second input, and an output; a first bipolar junction transistor (BJT) coupled to the first input; a second BJT coupled to the second input; and beta compensation circuitry, coupled to the first BJT and the second BJT, to regulate a first collector current of the first BJT to be independent of a first current gain of the first BJT and a second collector current of the second BJT to be independent of a second current gain of the second BJT, wherein the beta compensation circuitry comprises: a first transistor, coupled to a first emitter and a first base of the first BJT, to form a first feedback loop between the first emitter and the first base of the first BJT, wherein the first feedback loop is to provide a first corrective current to the first emitter based at least in part on a first base current from the first base; and a second transistor, coupled to a second emitter and a second base of the second BJT, to form a second feedback loop between the second emitter and the second base of the second BJT, wherein the second feedback loop is to provide a second corrective current to the second emitter based at least in part on a second base current from the second base. 2. The circuit of claim 1 , wherein the differential amplifier is to keep a first potential at the first emitter of the first BJT at a same level as a second potential at the second emitter of the second BJT. 3. The circuit of claim 1 , wherein the first and second BJTs have different current densities. 4. The circuit of claim 1 , wherein the beta compensation circuitry comprises a first resistor, coupled to the first base of the first BJT, to control a clamping function at the first base of the first BJT. 5. The circuit of claim 4 , wherein the beta compensation circuitry is to make a first voltage difference between a base voltage and an emitter voltage of the first BJT, and a second voltage difference between a base voltage and an emitter voltage of the second BJT, equal to a voltage drop over the first resister. 6. The circuit of claim 4 , wherein the beta compensation circuitry comprises a second resistor, coupled to the first resistor, to scale a bandgap reference voltage of the circuit established at the first emitter of the first BJT or the second emitter of the second BJT. 7. The circuit of claim 1 , wherein the beta compensation circuitry is to establish a bandgap reference voltage with a zero temperature coefficient based on a voltage at the first emitter of the first BJT or the second emitter of the second BJT. 8. A circuit, comprising: a bipolar junction transistor (BJT) having an emitter coupled to a first fixed current source to supply a first current to the BJT, a base coupled to a second fixed current source to supply a second current to the BJT, and a collector to output a collector current, wherein the BJT has a current gain based on the collector current and a base current from the base; and a feedback loop, coupled to the emitter and the base, to regulate the collector current independent of the current gain. 9. The circuit of claim 8 , wherein the feedback loop comprises a first node and a second node on a path from the first fixed current source to the second fixed current source, wherein the first node splits the first current onto a first path and a second path, and wherein the first path and the second path merge into the second node. 10. The circuit of claim 9 , wherein the feedback loop is to regulate a sum of currents merged at the second node from the first path and the second path to be equal to the second current. 11. The circuit of claim 9 , wherein the feedback loop comprises a separating device located on the second path from the first node to the second node. 12. The circuit of claim 11 , wherein the separating device is an N-type metal-oxide-semiconductor field-effect transistor. 13. The circuit of claim 8 , wherein the feedback loop is to regulate the collector current to be equal to a difference between the first current and the second current. 14. The circuit of claim 8 , wherein the feedback loop is to regulate the collector current to be independent of a variance of the base current from the base. 15. A method, comprising: sensing a base current from a base of a bipolar junction transistor (BJT); applying a corrective current to an emitter of the BJT, based at least in part on the sensed base current; supplying first and second fixed currents to a feedback loop between the emitter and the base; providing a collector current from a collector of the BJT independent of a current gain of the BJT, the collector current equal to a difference between the first and second fixed currents. 16. The method of claim 15 , further comprising: splitting the first fixed current onto a first path and a second path of the feedback loop, wherein the first path includes the emitter and the second path includes the base; adjusting a current on the second path based on the sensed base current and the second fixed current; and applying the corrective current to the emitter based on the current on the second path and the first fixed current.

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Classifications

  • G05F1/575Primary

    characterised by the feedback circuit · CPC title

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What does patent US9568929B2 cover?
Described are apparatuses and methods for generating a temperature-stabilized reference voltage on a semiconductor chip. An apparatus may include a differential amplifier including a first input, a second input, and an output. The apparatus may further include a first bipolar junction transistor (BJT) coupled to the first input; a second BJT coupled to the second input; and beta compensation ci…
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification G05F1/575. Mapped technology areas include Physics.
When was this patent published?
Publication date Tue Feb 14 2017 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).