High temperature RF heater pedestals

Patent metadata

Field	Value
Publication number	US-11062887-B2
Application number	US-201816132806-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 17, 2018
Publication date	Jul 13, 2021
Grant date	Jul 13, 2021

Abstract

Semiconductor processing systems are described, which may include a substrate support assembly having a substrate support surface. Exemplary substrate support assemblies may include a ceramic heater defining the substrate support surface. The assemblies may include a ground plate on which the ceramic heater is seated. The assemblies may include a stem with which the ground plate is coupled. The assemblies may include an electrode embedded within the ceramic heater at a depth from the substrate support surface. The chambers or systems may also include an RF match configured to provide an AC current and an RF power through the stem to the electrode. The RF match may be coupled with the substrate support assembly along the stem. The substrate support assembly and RF match may be vertically translatable within the semiconductor processing system.

First claim

What is claimed is:

1. A semiconductor processing system comprising:
a substrate support assembly having a substrate support surface, the substrate support assembly comprising:
a ceramic heater defining the substrate support surface;
a ground plate on which the ceramic heater is seated;
a stem with which the ground plate is coupled;
an AC power source;
an RF power source;
an electrode embedded within the ceramic heater at a depth from the substrate support surface; and
an RF match comprising a first input for the AC power source and a second input for the RF power source configured to provide an AC current and an RF power through the stem to the electrode, wherein the RF match comprises a divider between the first input and the second input, wherein the RF match is coupled with the substrate support assembly along the stem, and wherein the substrate support assembly and RF match are vertically translatable within the semiconductor processing system.

2. The semiconductor processing system of claim 1 , wherein the depth from the substrate support surface at which the electrode is embedded in the ceramic heater is less than or about 5 mm.

3. The semiconductor processing system of claim 1 , wherein the substrate support assembly is configured to heat a substrate to a temperature greater than or about 200° C.

4. The semiconductor processing system of claim 1 , wherein the substrate support surface is coated with a plasma resistant material comprising yttrium oxide.

5. The semiconductor processing system of claim 1 , further comprising an RF rod extending between the RF match and the substrate support assembly.

6. The semiconductor processing system of claim 5 , further comprising a second RF rod positioned within a ceramic shaft disposed within the stem and diffusion bonded with the ceramic heater.

7. The semiconductor processing system of claim 5 , wherein the substrate support assembly comprises fewer than ten couplings between the RF rod and the electrode.

8. The semiconductor processing system of claim 5 , wherein the RF match includes an RF strap coupling an RF power source with the RF rod.

9. The semiconductor processing system of claim 5 , wherein the RF match includes an RF filter coupling the AC power source with the RF rod.

10. The semiconductor processing system of claim 9 , wherein the RF filter comprises an inductor and a capacitor.

11. The semiconductor processing system of claim 10 , wherein the inductor comprises a ferrite core.

12. The semiconductor processing system of claim 10 , wherein the inductor provides at least 2 μH.

13. The semiconductor processing system of claim 1 , wherein the RF match is configured to provide a pulsing RF power, and wherein the electrode is configured to generate an RF bias plasma in a volume within the semiconductor processing system above the substrate support assembly.

14. A substrate support assembly having a substrate support surface, the substrate support assembly comprising:
a ceramic heater defining the substrate support surface;
a resistive heating element embedded within the ceramic heater;
a ground plate on which the ceramic heater is seated;
a stem with which the ground plate is coupled;
an electrode embedded within the ceramic heater at a depth from the substrate support surface, wherein the electrode is configured to generate an RF bias plasma in a volume above the substrate support assembly; and
an RF match configured to provide an AC current to the resistive heating element and an RF power to the electrode through the stem to the electrode.

15. The substrate support assembly of claim 14 , wherein the RF match is configured to provide a plasma power of below or about 100 W to the electrode.

16. The substrate support assembly of claim 14 , wherein the RF match includes an RF strap coupling an RF power source with an RF rod extending between the RF match and the substrate support assembly.

17. The substrate support assembly of claim 16 , wherein the RF match includes an RF filter coupling an AC power source with the RF rod.

18. The substrate support assembly of claim 17 , wherein the RF filter comprises an inductor and a capacitor.

19. The substrate support assembly of claim 14 , wherein the substrate support assembly is configured to heat a substrate to a temperature greater than or about 400° C.

20. A semiconductor processing system comprising:
a substrate support assembly having a substrate support surface, the substrate support assembly comprising:
a ceramic heater defining the substrate support surface;
a ground plate on which the ceramic heater is seated;
a stem with which the ground plate is coupled;
an electrode embedded within the ceramic heater at a depth from the substrate support surface, wherein the electrode is configured to generate an RF bias plasma in a volume above the substrate support assembly; and
an RF match configured to provide an AC current to the electrode to resistively heat the electrode and an RF power through the stem to the electrode, wherein the RF match is coupled with the substrate support assembly along the stem, wherein the RF match is configured to provide a plasma power of below or about 50 W to the electrode, wherein electrical couplings between the RF match and the electrode are characterized by losses in operation of less than or about 1 W, and wherein the substrate support assembly and RF match are vertically translatable within the semiconductor processing system.

Assignees

• Applied Materials Inc

Inventors

• Park Soonam
• Benjaminson David
• Wang Xikun
• Lubomirsky Dmitry

Classifications

• H10P72/7616

  characterised by a coating, a hardness or a material · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P72/0432

  mainly by conduction · CPC title

• H10P72/0434

  mainly by convection · CPC title

• H01J37/32724 Primary

  Temperature · CPC title