Substrate Processing Method, Apparatus, and System
US-2024363405-A1 · Oct 31, 2024 · US
US8937017B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8937017-B2 |
| Application number | US-69677310-A |
| Country | US |
| Kind code | B2 |
| Filing date | Jan 29, 2010 |
| Priority date | Jan 31, 2009 |
| Publication date | Jan 20, 2015 |
| Grant date | Jan 20, 2015 |
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Embodiments of the invention relate to a substrate etching method and apparatus. In one embodiment, a method for etching a substrate in a plasma etch reactor is provided that include flowing a backside process gas between a substrate and a substrate support assembly, and cyclically etching a layer on the substrate.
Opening claim text (preview).
What is claimed is: 1. A method for etching a substrate in a plasma etch reactor comprising. flowing O 2 gas out from between an edge of a substrate and a substrate support assembly and into a plasma processing chamber; cyclically etching a silicon layer on the substrate in the plasma processing chamber in the presence of the O 2 gas, wherein cyclically etching the silicon layer further comprises; at least one etch substep utilizing a plasma formed from a fluorine-containing…
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