High-density low temperature carbon films for hardmask and other patterning applications

Patent metadata

Field	Value
Publication number	US-11043372-B2
Application number	US-201815979842-A
Country	US
Kind code	B2
Filing date	May 15, 2018
Priority date	Jun 8, 2017
Publication date	Jun 22, 2021
Grant date	Jun 22, 2021

Abstract

Implementations of the present disclosure generally relate to the fabrication of integrated circuits. More particularly, the implementations described herein provide techniques for deposition of high-density films for patterning applications. In one implementation, a method of processing a substrate is provided. The method includes flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having a substrate positioned on an electrostatic chuck. The substrate is maintained at a pressure between about 0.5 mTorr and about 10 Torr. The method further includes generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate. The diamond-like carbon film has a density greater than 1.8 g/cc and a stress less than −500 MPa.

First claim

The invention claimed is:

1. A method of processing a substrate, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having the substrate positioned on an electrostatic chuck, wherein the substrate is maintained at a pressure between 0.5 mTorr and 10 mTorr, and wherein the hydrocarbon-containing gas mixture comprises a hydrocarbon precursor selected from the group consisting of: C 2 H 2 , C 3 H 6 , CH 4 , C 4 H 8 , bicyclo[2.2.1]hepta-2,5-diene (2,5-Norbornadiene), norbornene (C 7 H 10 ), or a combination thereof; and
generating a plasma at the substrate level by applying a first RF bias to the electrostatic chuck to deposit a diamond-like carbon film on the substrate from the hydrocarbon-containing gas mixture, wherein the diamond-like carbon film has a density greater than 1.8 g/cc, a stress less than −500 MPa, wherein the diamond-like carbon film contains from 50 percent to 90 percent of sp 3 hybridized carbon atoms, and wherein the substrate is maintained at a temperature from 10° C. to 50° C.

2. The method of claim 1 , wherein generating the plasma at the substrate level further comprises applying a second RF bias to the electrostatic chuck.

3. The method of claim 2 , wherein the first RF bias is provided at a power between 10 Watts and 3000 Watts at a frequency of from 350 KHz to 100 MHz.

4. The method of claim 3 , wherein the first RF bias is provided at a power between 2500 Watts and 3000 Watts at a frequency of 13.56 MHz.

5. The method of claim 4 , wherein the second RF bias is provided at a power between 10 Watts and 3000 Watts at a frequency of from 350 KHz to 100 MHz.

6. The method of claim 5 , wherein the second RF bias is provided at a power between 800 Watts and 1200 Watts at a frequency of 2 MHz.

7. The method of claim 1 , further comprising applying a chucking voltage to the substrate positioned on the electrostatic chuck.

8. The method of claim 1 , wherein the diamond-like carbon film has an elastic modulus greater than 150 GPa.

9. The method of claim 1 , wherein the hydrocarbon-containing gas mixture further comprises a dilution gas selected from the group consisting of: He, Ar, Xe, N 2 , H 2 , and combinations thereof.

10. A method of processing a substrate, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having the substrate positioned on an electrostatic chuck, wherein the electrostatic chuck has a chucking electrode and an RF electrode separate from the chucking electrode, wherein the substrate is maintained at a pressure between 0.5 mTorr and 10 Torr, and wherein the hydrocarbon-containing gas mixture consists of acetylene (C 2 H 2 ) and optionally a dilution gas selected from the group consisting of He, Ar, Xe, N 2 , H 2 , or a combination thereof; and
generating a plasma at the substrate level by applying a first RF bias to the RF electrode and a second RF bias to the chucking electrode to deposit a diamond-like carbon film on the substrate from the hydrocarbon-containing gas mixture, wherein the diamond-like carbon film has a density from 1.8 g/cc to 2.5 g/cc, a stress from −600 MPa to −300 MPa, and wherein the diamond-like carbon film contains from 50 percent to 90 percent of sp 3 hybridized carbon atoms.

11. The method of claim 10 , wherein the first RF bias is provided at a power between 2500 Watts and 3000 Watts at a frequency of about 13.56 MHz and the second RF bias is provided at a power between 800 Watts and 1200 Watts at a frequency of 2 MHz.

12. The method of claim 10 , wherein the diamond-like carbon film is used as an underlayer in an extreme ultraviolet (“EUV”) lithography process.

13. A method of processing a substrate, comprising:
flowing a hydrocarbon-containing gas mixture into a processing volume of a process chamber having the substrate positioned on an electrostatic chuck, wherein the electrostatic chuck has a chucking electrode and an RF electrode separate from the chucking electrode, wherein the processing volume is maintained at a pressure between 0.5 mTorr and 10 Torr, and wherein the hydrocarbon-containing gas mixture comprises a hydrocarbon precursor selected from the group consisting of: C 2 H 2 , C 3 H 6 , CH 4 , C 4 H 8 , bicyclo[2.2.1]hepta-2,5-diene (2,5-Norbornadiene), norbornene (C 7 H 10 ), or a combination thereof;
generating a plasma at the substrate level by applying a first RF bias to the RF electrode and a second RF bias to the chucking electrode to deposit a diamond-like carbon film on the substrate from the hydrocarbon-containing gas mixture, wherein the diamond-like carbon film has a density from 1.8 g/cc to 2.5 g/cc, a stress from −600 MPa to −300 MPa, and wherein the diamond-like carbon film contains from 50 percent to 90 percent of sp 3 hybridized carbon atoms;
forming a patterned photoresist layer over the diamond-like carbon film;
etching the diamond-like carbon film in a pattern corresponding with the patterned photoresist layer; and
etching the pattern into the substrate.

14. The method of claim 13 , wherein the first RF bias is provided at a power between 10 Watts and 3000 Watts at a frequency of from 350 KHz to 100 MHz.

15. The method of claim 14 , wherein the first RF bias is provided at a power between 2500 Watts and 3000 Watts at a frequency of 13.56 MHz.

16. The method of claim 15 , wherein the second RF bias is provided at a power between 10 Watts and 3000 Watts at a frequency of from 350 KHz to 100 MHz.

17. The method of claim 16 , wherein the second RF bias is provided at a power between 800 Watts and 1200 Watts at a frequency of 2 MHz.

18. The method of claim 2 , wherein the electrostatic chuck has a chucking electrode and an RF electrode and the first RF bias is applied to the RF electrode and the second RF bias is applied to the chucking electrode.

19. The method of claim 1 , further comprising:
exposing the diamond-like carbon film to hydrogen radicals to selectively etch sp 2 hybridized carbon atoms.

Assignees

• Applied Materials Inc

Inventors

• Venkatasubramanian Eswaranand
• Gottheim Samuel E
• Yang Yang
• Manna Pramit
• Ramaswamy Kartik
• Koshizawa Takehito
• Mallick Abhijit Basu
• Gandikota Srinivas

Classifications

• H10P72/0602

  Temperature monitoring · CPC title

• H10P76/4085

  characterised by the processes involved to create the masks · CPC title

• H10P76/4083

  characterised by their behaviours during the lithography processes, e.g. soluble masks or redeposited masks · CPC title

• H10P76/405

  characterised by their composition, e.g. multilayer masks · CPC title

• H10P72/722

  Details of electrostatic chucks · CPC title