Method for producing a semiconductor chip and semiconductor chip

Patent metadata

Field	Value
Publication number	US-11004876-B2
Application number	US-201916528307-A
Country	US
Kind code	B2
Filing date	Jul 31, 2019
Priority date	May 13, 2016
Publication date	May 11, 2021
Grant date	May 11, 2021

Abstract

A method for producing a semiconductor chip ( 100 ) is provided, in which, during a growth process for growing a first semiconductor layer ( 1 ), an inhomogeneous lateral temperature distribution is created along at least one direction of extent of the growing first semiconductor layer ( 1 ), such that a lateral variation of a material composition of the first semiconductor layer ( 1 ) is produced. A semiconductor chip ( 100 ) is additionally provided.

First claim

The invention claimed is:

1. A method for producing a semiconductor chip,
wherein a first semiconductor layer is grown on a growth substrate in a growing process,
wherein the production of the first semiconductor layer is effected in a wafer-composite on a surface having a temperature profile,
wherein during the growing process a local heating, based on a light irradiation, is performed for controlling a temperature distribution,
wherein the light irradiation for controlling the temperature distribution is coupled to a temperature measuring instrument and/or a measuring instrument for measuring a wafer curvature, wherein a light power radiated onto the growth substrate is locally adapted on the basis of curvature data based on a curvature measurement and/or on the basis of a spatially resolved temperature measurement, such that, in a first step, the temperature profile is homogenized.

2. The method according to claim 1 , wherein, in a second step, a modulation is selectively applied to the homogenized temperature profile, such that a lateral inhomogeneous temperature distribution is created on the growth substrate, such that a lateral variation of a material composition of the first semiconductor layer is produced, the lateral variation of the material composition comprising a gradient of a proportion of one or more constituents of the first semiconductor layer.

3. The method according to claim 2 , wherein the lateral inhomogeneous temperature distribution is selectively created, at least partly, by a locally varying light irradiation.

4. The method according to claim 3 , wherein the locally varying light irradiation is controlled based on an output of at least one of the temperature measuring instrument and the measuring instrument for measuring a wafer curvature.

5. The method according to claim 3 , wherein the light irradiation comprises irradiation with a laser and wherein the light irradiation is varied locally by a light deflecting means and/or by a plurality of light sources that can be operated independently of one another, to create the inhomogeneous lateral temperature distribution.

6. The method according to claim 1 , wherein a light power irradiated onto the growth substrate is locally adapted based on at least one of instantaneous curvature data based on the wafer curvature measurement and a spatially resolved temperature measurement.

7. The method according to claim 1 , wherein the growth substrate comprises markings in a form of adjustment or trigger markings.

8. The method according to claim 7 , wherein the markings are detected during the growth process, in the course of the light irradiation, such that the temperature profile can be adjusted to the markings.

9. The method according to claim 1 , wherein the light irradiation comprises irradiation with a laser.

10. The method according to claim 1 , wherein the first semiconductor layer is at least a part of a waveguide layer and/or of an active layer.

11. The method according to claim 1 , wherein at least one second semiconductor layer is grown over the first semiconductor layer and a ridge waveguide is created in the second semiconductor layer.

12. The method according to claim 1 , wherein the first semiconductor layer is part of a semiconductor layer sequence having a plurality of semiconductor layers.

Assignees

• Osram Oled Gmbh

Inventors

• Eichler Christoph
• Somers Andre
• Koenig Harald
• Stojetz Bernhard
• Loeffler Andreas
• Lell Alfred

Classifications

• H10P14/3416

  Nitrides · CPC title

• H10P14/27

  using selective deposition, e.g. simultaneous growth of monocrystalline and non-monocrystalline semiconductor materials · CPC title

• H10P95/906

  for altering the shape of semiconductors, e.g. smoothing the surface · CPC title

• H10P95/00

  Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

• H10P74/238

  comprising acting in response to an ongoing measurement without interruption of processing, e.g. endpoint detection or in-situ thickness measurement · CPC title