System based on low-pressure chemical vapor deposition for fabricating perovskite film from organic halide compound and metal halide compound

Patent metadata

Field	Value
Publication number	US-10975498-B2
Application number	US-201515503780-A
Country	US
Kind code	B2
Filing date	Aug 17, 2015
Priority date	Aug 21, 2014
Publication date	Apr 13, 2021
Grant date	Apr 13, 2021

Abstract

A system and method for fabricating a perovskite film is provided, the system including a housing for use as a CVD furnace having first and second sections coupled with first and second temperature control units, respectively. The first and second sections correspond substantially to the upstream and downstream of gases, respectively. One or more substrates are loaded in the second section and controlled by the second temperature control unit, and an evaporation unit containing an organic halide material is loaded in the first section and controlled by the first temperature control unit. Each of the substrates is pre-deposited with a metal halide material. The inside of the housing is pumped down to a low pressure.

First claim

The invention claimed is:

1. A system for fabricating a perovskite film, the system comprising:
a housing for use as a furnace, the housing having a closed hollow structure elongated longitudinally,
an inlet portion and an outlet portion on the housing, the inlet portion and the output portion being configured to input and output gases, respectively, and the inlet portion being configured to be adjusted for inputting a gas into the housing;
a single organic halide source, the single organic halide source being provided in an evaporation unit in a first section of the housing, and the evaporation unit being configured to generate an organic halide gas from the organic halide source;
one or more substrates provided in a second section of the housing, each of the one or more substrates being pre-deposited with a metal halide compound, the second section being downstream of the first section along a flow path of the gas in the housing;
a first temperature control unit coupled to the first section of the housing, the first temperature control unit being configured to control a first temperature for the organic halide source; and
a second temperature control unit coupled to the second section of the housing, the second temperature control unit being configured to control a second temperature for the one or more substrates pre-deposited with the metal halide compound,
wherein the evaporation unit is configured to generate the organic halide gas by evaporating the organic halide source at the first temperature without a chemical reaction between the organic halide source and the gas inputted into the housing.

2. The system of claim 1 , wherein the inlet portion and the outlet portion are configured to input and output gasses respectively, so that the organic halide gas is carried by the gas inputted through the inlet portion, and moves toward the one or more substrates, and during deposition, the organic halide gas reacts with the metal halide compound to form a perovskite film on each of the one or more substrates.

3. The system of claim 1 , further comprising:
a pump unit coupled to the outlet portion of the housing for pumping down the inside of the housing to a low pressure,
wherein the low pressure is in a range between 1 Pa and an atmospheric pressure.

4. The system of claim 1 , wherein
the first temperature control unit comprises a first heating element configured to evaporate the organic halide source to generate the organic halide gas, and
the first temperature control unit is configured to control the first temperature to be in a range between 150° C. and 350° C.

5. The system of claim 1 , wherein
the second temperature control unit comprises a second heating element configured to heat the one or more substrates, and
the second temperature control unit is configured to control the second temperature in a range between a room temperature and 170° C.

6. The system of claim 1 , further comprising:
a second evaporation unit configured to contain a dopant material and which is coupled to the inlet portion, wherein a third temperature associated with the second evaporation unit is controlled to be suitable for generating a dopant gas,
wherein the inlet portion is configured to be adjusted to input the gas and the dopant gas into the housing, so that the organic halide gas is carried by the gas and the dopant gas, and moves toward the one or more substrates, and during deposition, the organic halide gas and the dopant gas react with the metal halide compound to form a doped perovskite film on each of the one or more substrates.

7. The system of claim 6 , wherein
the second evaporation unit comprises a valve configured to control a partial pressure of the dopant gas in the gas to adjust the dopant gas flow.

8. The system of claim 1 , wherein the organic halide source comprises an organic halide compound represented by the formula AX, in which A represents an organic element selected from the group consisting of methylammonium and formamidinium, and X represents a halogen selected from the group consisting of Cl, I, and Br,
wherein the metal halide compound is represented by the formula BX 2 , in which B represents a metal element selected from the group consisting of Pb and Sn, and X represents a halogen selected from the group consisting of Cl, I, and Br, and
wherein the halogen in the organic halide compound is the same or different from the halogen in the metal halide compound.

9. The system of claim 1 , wherein the first temperature control unit and the second temperature control unit are configured to control the first temperature and the second temperature, respectively, so that the one or more substrates are saturated or oversaturated with the organic halide source.

10. The system of claim 1 ,
wherein the one or more substrates are vertically arranged in the second section of the housing,
wherein each of the one or more substrates is pre-deposited with the metal halide compound only on one side facing the inlet portion, and
wherein the second section is downstream of the first section along the flow path of the gas in the housing.

11. The system of claim 1 , wherein the first temperature control unit and the second temperature control unit independently control the first temperature and the second temperature.

12. The system of claim 1 , wherein a packing density of the one or more substrates arranged in the second section is adjustable to control a deposition amount of an organic halide compound.

Assignees

• Okinawa Inst Science & Tech School Corp

Inventors

• Qi Yabing
• Leyden Matthew Ryan

Classifications

• C30B31/16 Primary

  Feed and outlet means for the gases; Modifying the flow of the gases · CPC title

• H10K85/50

  Organic perovskites; Hybrid organic-inorganic perovskites [HOIP], e.g. CH3NH3PbI3 · CPC title

• H10K30/10

  comprising heterojunctions between organic semiconductors and inorganic semiconductors · CPC title

• H10K30/50

  Photovoltaic [PV] devices · CPC title

• C23C16/30 Primary

  Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides · CPC title