Substrate treating apparatus

Patent metadata

Field	Value
Publication number	US-10208401-B2
Application number	US-201715664294-A
Country	US
Kind code	B2
Filing date	Jul 31, 2017
Priority date	Mar 16, 2017
Publication date	Feb 19, 2019
Grant date	Feb 19, 2019

Abstract

Disclosed is a substrate treating apparatus comprising a wafer chuck on which a substrate is placed, an injector unit on a side of the wafer chuck and injecting process gases that include a first gas and a second gas, and a gas supply unit supplying the process gases to the injector unit. The gas supply unit comprises first and second gas supply sources that respectively accommodate the first and second gases, first and second gas supply lines that respectively connect the first and second gas supply sources to the injector unit, and first and second heating units that are respectively disposed on the first and second gas supply lines. The first heating units disposed on the first gas supply line have a density per unit length greater than the density per unit length of the second heating units disposed on the second gas supply line.

First claim

What is claimed is:

1. A substrate treating apparatus comprising:
a wafer chuck configured to receive a substrate;
an injector unit disposed on a side of the wafer chuck, the injector unit is configured to inject process gases that include a first gas and a second gas; and
a gas supply unit that supplies the process gases to the injector unit,
wherein the gas supply unit comprises:
a first gas supply source configured to accommodate the first gas and a second gas supply source configured to accommodate the second gas;
a first gas supply line connecting the first gas supply source to the injector unit and a second gas supply line connecting the second gas supply source to the injector unit; and
first heating units disposed on the first gas supply line and second heating units disposed on the second gas supply line,
wherein the first heating units disposed on the first gas supply line have a first density per unit length of the first gas supply line and the second heating units disposed on the second gas supply line have a second density per unit length of the second gas supply line,
wherein the first density per unit length of the first gas supply line is greater than the second density per unit length of the second gas supply line, and
wherein the gas supply unit further comprises:
a third gas supply source; and
a third gas supply line that connects the third gas supply source to the injector unit,
wherein no heating unit is provided on the third gas supply line.

2. The apparatus of claim 1 , wherein the injector unit comprises:
a first spray hole through which the first gas is sprayed; and
a second spray hole through which the second gas is sprayed,
wherein the first and second gas supply lines are respectively connected to the first and second spray holes.

3. The apparatus of claim 2 , wherein the first spray hole has a cross-sectional area smaller than the cross-sectional area of the second spray hole.

4. The apparatus of claim 1 , further comprising a process chamber in which a process is performed, wherein
the wafer chuck is installed within the process chamber,
the injector unit is disposed on a first sidewall of the process chamber, and
the gas supply unit is disposed outside the process chamber.

5. The apparatus of claim 4 , wherein the injector unit comprises:
an injector coupled to the first sidewall of the process chamber; and
an injector baffle coupled to the injector, the injector baffle spraying the process gases into the process chamber.

6. The apparatus of claim 5 , wherein the injector baffle includes a first end portion coupled to the injector which is coupled to the first sidewall of the process chamber and a second end portion opposite the first end portion of the injector baffle extending away from the first sidewall of the process chamber in a direction horizontal to a top surface of the wafer chuck such that the second end portion of the injector baffle is further away from the first sidewall of the process chamber compared to the first end portion of the injector baffle.

7. The apparatus of claim 5 , wherein the injector baffle comprises spray holes through which the process gases are sprayed into the process chamber.

8. The apparatus of claim 7 , further comprising a mixing zone being disposed within the injector and mixing the first and second gases supplied from the first and second gas supply lines.

9. The apparatus of claim 8 , wherein the mixing zone has an end portion connected to the first and second gas supply lines and another end portion connected to the spray holes.

10. The apparatus of claim 8 , further comprising a third heating unit disposed within the injector and surrounding the mixing zone.

11. The apparatus of claim 4 , further comprising an exhaust unit being disposed at a second sidewall of the process chamber opposite the first sidewall of the process chamber and facing the injector unit,
wherein the process gases are exhausted outside of the process chamber through the exhaust unit.

12. The apparatus of claim 1 , further comprising a pre-heating ring disposed on outside perimeter of the wafer chuck to surround the wafer chuck.

13. A substrate treating apparatus comprising:
a wafer chuck configured to receive a substrate;
an injector unit disposed on a side of the wafer chuck, the injector unit is configured to inject process gases that include a first gas and a second gas; and
a gas supply unit that supplies the process gases to the injector unit,
wherein the gas supply unit comprises:
a first gas supply source configured to accommodate the first gas and a second gas supply source configured to accommodate the second gas;
a first gas supply line connecting the first gas supply source to the injector unit and a second gas supply line connecting the second gas supply source to the injector unit; and
first heating units disposed on the first gas supply line and second heating units disposed on the second gas supply line,
wherein the first heating units disposed on the first gas supply line have a first density per unit length of the first gas supply line and the second heating units disposed on the second gas supply line have a second density per unit length of the second gas supply line,
wherein the first density per unit length of the first gas supply line is greater than the second density per unit length of the second gas supply line, and
wherein the first and second gas supply sources are each provided in plural.

14. The apparatus of claim 1 , wherein the first and second heating units include a heating coil or a heating jacket.

15. The apparatus of claim 1 , wherein the wafer chuck is rotatable.

16. A method of manufacturing a semiconductor device comprising:
placing a substrate on a top surface of a wafer chuck;
supplying a source gas on the substrate from a source gas supply unit via a source gas supply line, the source gas supply line having a plurality of first heating units configured to heat the source gas, the plurality of first heating units having a first density per unit length of the source gas supply line; and
supplying an etching gas on the substrate from an etching gas supply unit via an etching gas supply line, the etching gas supply line having a plurality of second heating units configured to heat the etching gas, the plurality of second heating units having a second density per unit length of the etching gas supply line,
wherein the second density per unit length of the etching gas supply line is greater than the first density per unit length of the source gas supply line.

17. The method according to claim 16 , further comprising supplying a dopant gas on the substrate from a dopant gas supply unit via a dopant gas supply line before supplying the etching gas on the substrate.

18. The method according to claim 16 , further comprising removing the substrate from the wafer chuck after supplying the etching gas on the substrate.

19. The method according to claim 16 , further comprising: providing a pre-heating ring on outside perimeter of the wafer chuck to surround the wafer chuck.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Park Keum Seok
• Kim Sunjung
• Kim Yihwan

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P72/0402

  Apparatus for fluid treatment (H10P72/0441, H10P72/0448 take precedence) · CPC title

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P14/3438

  Doping during depositing · CPC title

• H10P14/3411

  Silicon, silicon germanium or germanium · CPC title