Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Patent metadata

Field	Value
Publication number	US-10968377-B2
Application number	US-201815951598-A
Country	US
Kind code	B2
Filing date	Apr 12, 2018
Priority date	Apr 14, 2017
Publication date	Apr 6, 2021
Grant date	Apr 6, 2021

Abstract

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel phosphorus (NiP) surfaces for hard disk applications.

First claim

The invention claimed is:

1. A method of chemical-mechanical processing a nickel-phosphorus surface by a bulk removal step, the method comprising:
providing a substrate having a nickel-phosphorus surface;
providing bulk slurry comprising bulk slurry abrasive particles dispersed in liquid carrier, the bulk slurry abrasive particles comprising, as hulk slurry primary abrasive particles, silica abrasive particles having an average particle size of not greater than 100 nanometers;
providing a polishing pad in contact with a platen,
in the bulk removal step, contacting the substrate surface with the polishing pad and the bulk slurry, with motion therebetween, to remove material from the substrate surface and provide a bulk-processed surface of the substrate,
providing polishing slurry comprising polishing slurry abrasive particles dispersed in liquid carrier, the polishing slurry abrasive particles comprising, as polishing slurry primary abrasive particles, the polishing slurry primary abrasive particles are irregularly-shaped and have an average particle size of not greater than 60 nanometers,
in a polishing step, contacting the bulk-processed surface with the polishing pad used in the bulk removal step and the polishing slurry, with motion therebetween, to remove nickel-phosphorus material from the surface to produce a polished surface, wherein, after the bulk removal step and before the polishing step, the method does not include a step of rinsing the substrate surface.

2. The method of claim 1 wherein the bulk slurry abrasive particles include at least 95 weight percent silica abrasive particles having an average particle size of not greater than 100 nanometers, based on total weigh abrasive particles in the bulk slurry.

3. The method of claim 1 wherein the bulk slurry abrasive particles consist essentially of the silica abrasive particles having an average particle size of not greater than 100 nanometers.

4. The method of claim 1 wherein the silica abrasive particles are colloidal silica particles.

5. The method of claim 1 wherein the hulk slurry primary abrasive particles are spherical particles having an average particle size of not greater than 90 nanometers.

6. The method of claim 1 wherein the bulk slurry abrasive particles comprise bulk sherry secondary abrasive particles that are irregular-shaped and have an average particle size of not greater than 60 nanometers.

7. The method of claim 1 wherein the bulk slurry primary abrasive particles are irregular-shaped and have an average particle size of not greater than 60 nanometers.

8. The method of claim 1 wherein a rate of removal of the nickel-phosphorus material from the surface during the polishing step is less than a rate of removal of the nickel-phosphorus material from the substrate during the bulk removal step.

Assignees

• Cabot Microelectronics Corp
• Cmc Mat Inc

Inventors

• Li Tong
• Lau Hon Wu

Classifications

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• C09K3/1472 Primary

  Non-aqueous liquid suspensions · CPC title