Polishing composition and method for nickel-phosphorous coated memory disks

Patent metadata

Field	Value
Publication number	US-9534147-B2
Application number	US-201414515723-A
Country	US
Kind code	B2
Filing date	Oct 16, 2014
Priority date	Oct 18, 2013
Publication date	Jan 3, 2017
Grant date	Jan 3, 2017

Abstract

The invention provides a polishing composition that contains (a) α-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

First claim

The invention claimed is:

1. A chemical-mechanical polishing composition comprising:
(a) α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm,
(b) sodium persulfate,
(c) a complexing agent, wherein the complexing agent is an amino acid, wherein the amino acid is selected from the group consisting of (hydroxyethyl) ethylene diamine, glycine, and a combination thereof, and
(d) water, and wherein the composition further comprises an amine, wherein the amine is selected from the group consisting of ethylenediamine, triethanolamine, benzylamine, monoethanolamine, and combinations thereof.

2. The composition of claim 1 , further comprising an abrasive selected from the group consisting of substantially spherical alumina particles, colloidal silica particles and combinations thereof.

3. The composition of claim 1 , further comprising α-alumina abrasive particles having an average particle size of about 310 nm to about 390 nm.

4. The composition of claim 1 , wherein the α-alumina particles comprise 0.1 to 1.0 wt. %.

5. The composition of claim 2 , wherein the substantially spherical alumina particles comprise 0.125 wt. % to 0.25 wt. % and the colloidal silica particles comprise 0.15 wt. % to 3.15 wt. %.

6. The composition of claim 3 , wherein the weight ratio of the α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm to the α-alumina abrasive particles having an average particle size of about 310 nm to about 390 nm is 4:1.

7. The composition of claim 1 , wherein the amine is ethylenediamine.

8. The composition of claim 1 , wherein the complexing agent is (hydroxyethyl) ethylenediamine triacetic acid.

9. A method of polishing a substrate, which method comprises:
(i) providing a substrate,
(ii) providing a polishing pad,
(iii) providing a polishing composition comprising:
(a) α-alumina abrasive particles having an average particle size of about 250 nm to about 300 nm,
(b) sodium persulfate
(c) a complexing agent, wherein the complexing agent is an amino acid, wherein the amino acid is selected from the group consisting of (hydroxyethyl) ethylene diamine, glycine, and a combination thereof, and
(d) water, wherein the pH of the polishing composition is about 1.3 to about 3.0, and wherein the composition further comprises an amine, wherein the amine is selected from the group consisting of ethylenediamine, triethanolamine, benzylamine, monoethanolamine, and combinations thereof,
(iv) contacting a surface of the substrate with the polishing pad and the polishing composition, and
(v) abrading at least a portion of the surface of the substrate to remove at least some portion of the substrate and to polish the surface of the substrate.

10. The method of claim 9 , wherein the substrate comprises nickel phosphate.

11. The method of claim 9 , wherein the composition further comprises a nonionic surfactant.

12. The method of claim 9 , wherein the substrate comprises at least one layer of nickel-phosphorous, and at least some nickel-phosphorous is removed from the surface of the substrate to polish the surface of the substrate.

13. The method of claim 9 , wherein the substrate is a nickel-phosphorous coated aluminum memory disk.

14. The method of claim 9 , wherein the complexing agent is (hydroxyethyl) ethylenediamine triacetic acid.

Assignees

• Cabot Microelectronics Corp

Inventors

• Lau Hon Wu
• Palanisamy Chinnathambi Selvaraj
• Zhang Ke

Classifications

• H10P52/402

  of semiconductor materials · CPC title

• B24B37/044 Primary

  characterised by the composition of the lapping agent · CPC title

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• G11B5/8404

  manufacturing base layers · CPC title

• H01L21/30625

  Electricity · mapped topic