Cmp composition and method for polishing rigid disks

Patent metadata

Field	Value
Publication number	US-2016288290-A1
Application number	US-201615091275-A
Country	US
Kind code	A1
Filing date	Apr 5, 2016
Priority date	Apr 6, 2015
Publication date	Oct 6, 2016
Grant date	—

Abstract

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

First claim

1 . A polishing composition comprising:
(a) silica present in an amount of from about 0.01 wt. % to about 10 wt. %; (b) first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol; (c) nickel complexing agent; (d) second alcohol consisting of polyvinyl alcohol; and water, wherein the polishing composition has a pH of from about 1 to about 5.

2 . The composition of claim 1 , wherein the polyvinyl alcohol has a molecular weight of from about 2,000 g/mol to about 50,000 g/mol.

3 . The composition of claim 1 , wherein the polyvinyl alcohol is present in an amount of from about 0.001 wt. % to about 0.2 wt. %.

4 . The composition of claim 1 , wherein the first alcohol is one or more of isopropanol (IPA), butyl alcohol, ethylene glycol, propylene glycol, diethylene glycol, pentaerythritol, dipentaerytritol, trimethyolpropane, and dipropylene glycol.

5 . The composition of claim 4 , wherein the first alcohol is present in an amount of from about 0.05 wt. % to about 20 wt. %.

6 . The composition of claim 1 , wherein the nickel complexing agent comprises one or more of an organic monocarboxylic acid, an organic bicarboxylic acid, an amino carboxylic acid, and any salt thereof.

7 . The composition of claim 6 , wherein the nickel complexing agent is one or more of hydroxyethylenediaminetriacetic acid (HEDTA), glycine, oxime and/or dioxime Ni complexer, and any salt thereof.

8 . The composition of claim 7 , wherein the nickel complexing agent comprises HEDTA and glycine.

9 . The composition of claim 1 , wherein the nickel complexing agent is present in an amount of from about 0.01 wt. % to about 10 wt. %.

10 . The composition of claim 1 , wherein the composition further comprises hydrogen peroxide.

11 . The composition of claim 10 , wherein the hydrogen peroxide is present in an amount of from about 0.01 wt. % to about 4 wt. %.

12 . The composition of claim 1 , wherein the silica has an average particle size of from about 5 nm to about 80 nm.

13 . The composition of claim 1 , wherein the silica has an average primary particle size of about 40 nm or less.

14 . A polishing composition comprising:
(a) silica present in an amount of from about 0.01 wt. % to about 10 wt. %; (b) first alcohol having a flash point of at least about 10° C.; (c) nickel complexing agent; (d) second alcohol consisting of polyvinyl alcohol; and (e) water, wherein the polishing composition has a pH of from about 1 to about 4.

15 . The composition of claim 14 , wherein the first alcohol is present in an amount from about 0.05 wt. % to about 20 wt. %.

16 . The composition of claim 14 , wherein the nickel complexing agent comprises one or more of an organic monocarboxylic acid, an organic bicarboxylic acid, an amino carboxylic acid, and any salt thereof.

17 . The composition of claim 14 , wherein the polyvinyl alcohol is present and has a molecular weight of from about 2,000 g/mol to about 50,000 g/mol.

18 . The composition of claim 14 , wherein the composition further comprises hydrogen peroxide.

19 . A method of polishing a substrate, which method comprises:
(i) providing a substrate, (ii) providing a polishing pad, (iii) providing the polishing composition of claim 1 : (iv) dispensing the polishing composition and contacting the polishing pad, to a surface of the substrate, and (v) abrading at least a portion of the surface of the substrate to polish the surface of the substrate.

20 . A method of polishing a substrate, which method comprises:
(i) providing a substrate, (ii) providing a polishing pad, (iii) providing the polishing composition of claim 14 : (iv) dispensing the polishing composition and contacting the polishing pad, to a surface of the substrate, and (v) abrading at least a portion of the surface of the substrate to remove at least some portion of the substrate and to polish the surface of the substrate.

21 . The method of claim 20 , wherein the substrate comprises at least one layer of nickel-phosphorous, and at least some nickel-phosphorous is removed from the surface of the substrate to polish the surface of the substrate.

22 . The method of claim 20 , wherein the substrate is a nickel-phosphorous coated aluminum memory disk.

Assignees

• Cabot Microelectronics Corp

Inventors

• Li Tong
• White Michael
• Palanisamy Chinnathambi Selvaraj
• Zhang Ke

Classifications

• B24B37/24 Primary

  characterised by the composition or properties of the pad materials · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• B24B37/048

  of sliders and magnetic heads of hard disc drives or the like · CPC title

• C09G1/04 Primary

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title

• C09G1/02

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title