Feature fill with multi-stage nucleation inhibition

Patent metadata

Field	Value
Publication number	US-10916434-B2
Application number	US-202016786513-A
Country	US
Kind code	B2
Filing date	Feb 10, 2020
Priority date	May 18, 2015
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

Described herein are methods of filling features with tungsten, and related systems and apparatus, involving inhibition of tungsten nucleation. In some embodiments, the methods involve selective inhibition along a feature profile. Methods of selectively inhibiting tungsten nucleation can include exposing the feature to a direct or remote plasma. The methods include performing multi-stage inhibition treatments including intervals between stages. One or more of plasma source power, substrate bias power, or treatment gas flow may be reduced or turned off during an interval. The methods described herein can be used to fill vertical features, such as in tungsten vias, and horizontal features, such as vertical NAND (VNAND) wordlines. The methods may be used for both conformal fill and bottom-up/inside-out fill. Examples of applications include logic and memory contact fill, DRAM buried wordline fill, vertically integrated memory gate and wordline fill, and 3-D integration using through-silicon vias.

First claim

The invention claimed is:

1. A method comprising
providing a substrate including a feature having one or more feature openings and an unfilled feature interior; and
performing a multi-stage inhibition treatment comprising exposing the feature to a treatment gas in multiple stages and multiple intervals, with successive stages separated by one of the multiple intervals, wherein a treatment gas flow rate is reduced at the start of each interval and increased at the end of the interval, and wherein the multi-stage inhibition treatment inhibits nucleation of a metal in the feature.

2. The method of claim 1 , wherein reducing the treatment gas flow rate comprises turning off flow of the treatment gas.

3. The method of claim 1 , wherein the multi-stage inhibition treatment is a non-plasma inhibition process.

4. The method of claim 1 , wherein the treatment gas comprises a nitrogen-containing compound.

5. The method of claim 1 , wherein the treatment gas is N 2 .

6. The method of claim 1 , wherein the treatment gas is NH 3 .

7. The method of claim 1 , further comprising depositing a tungsten layer in the feature prior to the multi-stage inhibition treatment.

8. The method of claim 1 , wherein the multi-stage inhibition treatment comprises treating a metal nitride surface of the feature.

9. The method of claim 1 , wherein the multi-stage inhibition treatment is performed without etching material in the feature.

10. The method of claim 1 , wherein the feature fill is performed without etching material in the feature.

11. The method of claim 1 , wherein the feature is a wordline in a 3-D NAND structure.

12. The method of claim 1 , wherein at least a constriction in the feature is preferentially inhibited.

13. The method of claim 1 , wherein the treatment gas flow rate during a first stage of the multi-stage inhibition treatment is different than during a second stage.

14. The method of claim 1 , further comprising, after the multi-stage inhibition treatment, depositing tungsten in the feature in accordance with an inhibition profile formed by the multi-stage inhibition treatment.

15. The method of claim 4 , further comprising repeating a cycle of the multi-stage inhibition treatment and deposition one or more times to fill the feature.

16. The method of claim 4 , wherein the multi-stage inhibition treatment and the deposition are performed in different stations of a multi-station chamber.

17. The method of claim 4 , further comprising, after the multi-stage inhibition treatment and prior to the deposition, transferring the substrate from a first station of a first apparatus to a first station of a second apparatus.

18. A method comprising
providing a substrate including a feature having one or more feature openings and an unfilled feature interior; and
performing a multi-stage treatment comprising exposing the feature to a treatment gas in multiple stages and multiple intervals, with successive stages separated by one of the multiple intervals, wherein a treatment gas flow rate is reduced at the start of each interval and increased at the end of the interval, and wherein the treatment gas is a nitrogen-containing gas.

19. A method comprising
providing a substrate including a feature having one or more feature openings and an unfilled feature interior; and
performing a multi-stage treatment comprising exposing the feature to NH 3 gas in multiple stages and multiple intervals, with successive stages separated by one of the multiple intervals, wherein a NH 3 flow rate is reduced at the start of each interval and increased at the end of the interval.

Assignees

• Lam Res Corp

Inventors

• Wang Deqi
• Chandrashekar Anand
• Humayun Raashina
• Danek Michal

Classifications

• H10W20/0261

  characterised by the filling method or the material of the conductive fill · CPC title

• H10W20/0245

  comprising use of blind vias during the manufacture · CPC title

• H10P14/432

  using selective deposition · CPC title

• H10W20/0523

  by irradiating with ultraviolet or particle radiation · CPC title

• H10W20/057

  by selectively depositing, e.g. by using selective CVD or plating · CPC title