Lanthanum compound and methods of forming thin film and integrated circuit device using the lanthanum compound

Patent metadata

Field	Value
Publication number	US-10913754-B2
Application number	US-201916251236-A
Country	US
Kind code	B2
Filing date	Jan 18, 2019
Priority date	Jul 7, 2015
Publication date	Feb 9, 2021
Grant date	Feb 9, 2021

Abstract

A lanthanum compound, a method of synthesizing a thin film, and a method of manufacturing an integrated circuit device, the compound being represented by Formula 1 below,

wherein, in Formula 1, R 1 is a hydrogen atom or a C1-C4 linear or branched alkyl group, R 2 and R 3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R 2 and R 3 being a C3-C5 branched alkyl group, and R 4 is a hydrogen atom or a C1-C4 linear or branched alkyl group.

First claim

What is claimed is:

1. A lanthanum compound represented by Formula 1 below,

wherein, in Formula 1,
R 1 is a hydrogen atom or a C1-C4 linear or branched alkyl group,
R 2 and R 3 are each independently a hydrogen atom or a C1-C5 linear or branched alkyl group, at least one of R 2 and R 3 being a C3-C5 branched alkyl group, and
R 4 is a hydrogen atom or a C1-C4 linear or branched alkyl group,
wherein the compound is an asymmetrical amidinate in which R1 and R 3 are substituents having different structures from each other.

2. The lanthanum compound as claimed in claim 1 , wherein:
one of R 2 and R 3 is a C3-C5 branched alkyl group, and
the other one of R 2 and R 3 is a C1-C5 linear alkyl group.

3. The lanthanum compound as claimed in claim 1 , wherein:
one of R 2 and R 3 is an iPr group, an iBu group, a tBu group, or an sBu group, and the other one of R 2 and R 3 is a Me group, an Et group, an nPr group, or an nBu group.

4. The lanthanum compound as claimed in claim 3 , wherein:
R 1 is hydrogen atom, a Me group, an Et group, an nPr group, or an iPr group, and
R 4 is a Me group, an Et group, an nPr group, or an iPr group.

5. The lanthanum compound as claimed in claim 1 , wherein the lanthanum compound has a structure represented by one of Chemical Formulae 1 to 4,

6. The lanthanum compound as claimed in claim 1 , wherein the lanthanum compound is a liquid at a temperature between 20° C. to 28° C.

7. A method of synthesizing a thin film, the method comprising forming a lanthanum-containing film on a substrate by using the lanthanum compound as claimed in claim 1 , which is a liquid at a temperature between 20° C. to 28° C.

8. The method as claimed in claim 7 , wherein forming the lanthanum-containing film includes:
vaporizing the lanthanum compound represented by Formula 1 in which one of R 2 and R 3 is a C3-C5 branched alkyl group, and the other one of R 2 and R 3 is a C1-C5 linear alkyl group;
forming a La source adsorption layer on the substrate by supplying the vaporized lanthanum compound onto the substrate; and
supplying a reactive gas onto the La source adsorption layer.

9. The method as claimed in claim 7 , wherein forming the lanthanum-containing film includes:
vaporizing the lanthanum compound represented by Formula 1, in which R 2 and R 3 are each independently a C3-C5 branched alkyl group, and R 4 is a C2-C4 linear or branched alkyl group;
forming a La source adsorption layer on the substrate by supplying the vaporized lanthanum compound onto the substrate; and
supplying a reactive gas onto the La source adsorption layer.

10. A method of manufacturing an integrated circuit device, the method comprising:
forming a lower structure on a substrate; and
forming a lanthanum-containing film on the lower structure by using the lanthanum compound as claimed in claim 1 , and which is a liquid at 20° C. to 28° C.

11. The method as claimed in claim 10 , wherein forming the lanthanum-containing film includes using the lanthanum compound represented by Formula 1, in which, in Formula 1, one of R 2 and R 3 is a C3-C5 branched alkyl group and the other one of R 2 and R 3 is a C1-C5 linear alkyl group.

12. The method as claimed in claim 10 , further comprising diffusing La atoms into a region of the lower structure from the lanthanum-containing film by heat-treating the lanthanum-containing film.

13. The method as claimed in claim 10 , wherein forming the lower structure includes:
forming fin-type active region protruding upwardly from the substrate by etching a portion of the substrate;
forming an interface layer on surface of the fin-type active region; and
forming a high-k dielectric film on the interface layer,
wherein forming the lanthanum-containing film includes forming the lanthanum-containing film on the high-k dielectric film.

14. The method as claimed in claim 13 , further comprising diffusing La atoms into an interface between the interface layer and the high-k dielectric film by heat-treating the lanthanum-containing film.

15. The method as claimed in claim 10 , wherein forming the lower structure includes:
forming gate trench in the substrate;
forming a gate dielectric film covering inner surface of the gate trench; and
forming a gate line that fills a portion of the gate trench on the gate dielectric film, the gate line including a metal-containing liner covering the gate dielectric film and a metal film surrounded by the metal-containing liner,
wherein forming the lanthanum-containing film includes forming the lanthanum-containing film on the metal-containing liner, and
wherein the method further includes forming a La doped metal-containing liner on a portion of an upper region of the metal-containing liner by diffusing La atoms into the metal-containing liner from the lanthanum-containing film, after forming the lanthanum-containing film.

Assignees

• Samsung Electronics Co Ltd
• Adeka Corp

Inventors

• Park Gyu-Hee
• Kim Youn-Soo
• Lim Jae-Soon
• Cho Youn-Joung
• Harano Kazuki
• Sato Haruyoshi
• Shiratori Tsubasa
• Yamada Naoki

Classifications

• H10P14/69396

  the material containing at least one rare earth metal element, e.g. oxides of lanthanides, scandium or yttrium · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10D30/62

  Fin field-effect transistors [FinFET] · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title

• C23C16/405

  of refractory metals or yttrium · CPC title