Method and device for embossing of a nanostructure

Patent metadata

Field	Value
Publication number	US-10906293-B2
Application number	US-201916654098-A
Country	US
Kind code	B2
Filing date	Oct 16, 2019
Priority date	Apr 22, 2014
Publication date	Feb 2, 2021
Grant date	Feb 2, 2021

Abstract

A method for embossing a nanostructure, formed on a nanostructure punch, into a punch surface of a curable material which has been applied to a substrate. The method includes the following steps, especially following sequence: alignment of the nanostructure relative to the punch surface, embossing of the punch surface by a) prestressing of the nanostructure punch by deformation of the nanostructure punch and/or prestressing of the substrate by deformation of the substrate, b) making contact of a partial area of the punch surface with the nanostructure punch and c) automatic contacting of the remaining surface at least partially, especially predominantly, by the prestressing of the nanostructure punch and/or the prestressing of the substrate.

First claim

Having described the invention, the following is claimed:

1. A method for embossing of a nanostructure to a stamp surface of a substrate, comprising:
applying a resist onto the stamp surface of the substrate prior to an imprint operation;
after the applying of the resist onto the stamp surface, positioning a nanostructure stamp having the nanostructure thereon at a distance from the stamp surface;
effecting automatic contact-making of the nanostructure stamp with the stamp surface by releasing the nanostructure stamp from the distance at which it is positioned onto the stamp surface to emboss the nanostructure of the nanostructure stamp to the substrate in vacuum or at ambient pressure under inert gas during the imprint operation; and
deforming the nanostructure stamp at the distance at which it is positioned with one or more pressure elements during the imprint operation to bring the nanostructure into contact with a partial area of the stamp surface of the substrate from the distance at which the nanostructure stamp is positioned prior to the effecting of the automatic contact-making.

2. The method of claim 1 , wherein the pressure elements comprise gas.

3. The method of claim 1 , wherein the pressure elements comprise fluid.

4. The method of claim 1 , wherein the pressure elements comprise one of a pin and an actuator.

5. The method of claim 4 , further comprising:
pressurizing the pressure elements with a fluid.

6. The method of claim 4 , further comprising:
pressurizing the pressure elements with a gas.

7. The method of claim 1 , further comprising:
carrying out a separation operation under control of a force sensor during the imprint operation.

Assignees

• Ev Group E Thallner Gmbh

Inventors

• Kreindl Gerald

Classifications

• H10P76/204

  of organic photoresist masks · CPC title

• H10D62/118

  Nanostructure semiconductor bodies · CPC title

• G03F7/0002 Primary

  Lithographic processes using patterning methods other than those involving the exposure to radiation, e.g. by stamping · CPC title

• G03F7/70733

  Handling masks and workpieces, e.g. exchange of workpiece or mask, transport of workpiece or mask · CPC title

• G03F7/70783

  Handling stress or warp of chucks, masks or workpieces, e.g. to compensate for imaging errors or considerations related to warpage of masks or workpieces due to their own weight · CPC title