Metal mask base, metal mask and method for producing metal mask

US10903426B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10903426-B2
Application numberUS-201815869597-A
CountryUS
Kind codeB2
Filing dateJan 12, 2018
Priority dateJul 17, 2015
Publication dateJan 26, 2021
Grant dateJan 26, 2021

How to read this patent

A practical reading order for non-experts. Skip the full description unless you need deep technical detail.

  1. Title

    What the patent document calls the invention.

  2. Abstract

    A short plain-language summary of the technical disclosure.

  3. Assignees and inventors

    Who owns or filed the patent and who is credited as inventor.

  4. Key dates

    Filing, priority, publication, and grant dates set the timeline.

  5. First independent claim

    The legal scope of protection — read this for what is actually claimed.

  6. CPC / IPC classifications

    Technology tags used to group this patent with similar filings.

  7. Citations and related patents

    Prior art links and similar publications in this corpus.

Abstract

Official abstract text for this publication.

A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.

First claim

Opening claim text (preview).

The invention claimed is: 1. A metal mask substrate comprising: a metal obverse surface, the metal obverse surface being a first surface; a first resist on the obverse surface; a metal second surface, which is a surface opposite to the first surface; and a second resist on the second surface, wherein the obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, the obverse surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm, the second surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm, and the second surface has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm. 2. The metal mask substrate according to claim 1 , wherein the obverse surface is made of Invar. 3. The metal mask substrate according to claim 1 , further comprising a metal layer, which is made of Invar, wherein the obverse surface is an obverse surface of the metal layer, and the metal mask substrate further comprises a polyimide layer, which faces a surface of the metal layer that is opposite to the obverse surface. 4. The metal mask substrate according to claim 1 , wherein the first resist is a dry film resist, and the obverse surface is configured such that the dry film resist is affixed to the obverse surface.

Assignees

Inventors

Classifications

  • using selective deposition, e.g. using a mask · CPC title

  • C23C14/042Primary

    using masks · CPC title

  • Local etching · CPC title

  • for etching iron group metals · CPC title

  • Chemical milling · CPC title

Patent family

Related publications grouped by family.

External sources

Frequently asked questions

Answers are generated from the same data shown on this page.

What does patent US10903426B2 cover?
A metal mask substrate includes a metal obverse surface configured such that a resist is placed on the obverse surface. The obverse surface has a three-dimensional surface roughness Sa of less than or equal to 0.11 μm. The obverse surface also has a three-dimensional surface roughness Sz of less than or equal to 3.17 μm.
Who is the assignee on this patent?
Toppan Printing Co Ltd
What technology area does this patent fall under?
Primary CPC classification C23C14/042. Mapped technology areas include Chemistry & Metallurgy.
When was this patent published?
Publication date Tue Jan 26 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).