Fuse element resistance enhancement by laser anneal and ion implantation

US10903162B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10903162-B2
Application numberUS-201916293237-A
CountryUS
Kind codeB2
Filing dateMar 5, 2019
Priority dateMar 5, 2019
Publication dateJan 26, 2021
Grant dateJan 26, 2021

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such as voids created by directing a laser at the central fuse segment as a component of a laser annealing process. Alternatively, and or additionally, the central fuse segment may include dopants implementing via an ion implantation process to increase resistance characteristics of the central fuse segment.

First claim

Opening claim text (preview).

What is claimed is: 1. A method for fabricating an electronic fuse, comprising: forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the opposed contact segments; and altering material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. 2. The method of claim 1 , wherein the film material is copper. 3. The method of claim 2 , wherein forming the recess in the film material includes etching the film material. 4. The method of claim 3 , wherein altering the material of the central fuse segment includes creating voids within the central fuse segment by directing a laser at the central fuse segment as a component of a laser annealing process. 5. The method of claim 4 , further including applying a masking material to the contact segments prior to directing the laser. 6. The method of claim 5 , wherein the masking material includes a laser absorbing material. 7. The method of claim 6 , wherein the masking material is Rubrene. 8. The method of claim 6 , further including removing the masking material. 9. The method of claim 6 , further including removing the masking material by an etching or chemical mechanical polishing process.

Assignees

Inventors

Classifications

  • by using coherent radiation, e.g. using a laser · CPC title

  • Gettering within semiconductor bodies · CPC title

  • Diffusion for doping of conductive or resistive layers · CPC title

  • Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title

  • H10W20/493Primary

    Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title

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What does patent US10903162B2 cover?
A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such a…
Who is the assignee on this patent?
IBM
What technology area does this patent fall under?
Primary CPC classification H10W20/493. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Jan 26 2021 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 3 related publications on this page (citations in our corpus or others sharing the same primary CPC).