Modular fuses and antifuses for integrated circuits
US-9905511-B2 · Feb 27, 2018 · US
US10903162B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10903162-B2 |
| Application number | US-201916293237-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 5, 2019 |
| Priority date | Mar 5, 2019 |
| Publication date | Jan 26, 2021 |
| Grant date | Jan 26, 2021 |
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A method for fabricating an electronic fuse includes forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the contact segments and altering the material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. The central fuse segment may include defects such as voids created by directing a laser at the central fuse segment as a component of a laser annealing process. Alternatively, and or additionally, the central fuse segment may include dopants implementing via an ion implantation process to increase resistance characteristics of the central fuse segment.
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What is claimed is: 1. A method for fabricating an electronic fuse, comprising: forming a recess within a film material to define opposed contact segments and a central fuse segment interconnecting the opposed contact segments; and altering material of the central fuse segment of the film material to increase electrical resistance characteristics of the central fuse segment. 2. The method of claim 1 , wherein the film material is copper. 3. The method of claim 2 , wherein forming the recess in the film material includes etching the film material. 4. The method of claim 3 , wherein altering the material of the central fuse segment includes creating voids within the central fuse segment by directing a laser at the central fuse segment as a component of a laser annealing process. 5. The method of claim 4 , further including applying a masking material to the contact segments prior to directing the laser. 6. The method of claim 5 , wherein the masking material includes a laser absorbing material. 7. The method of claim 6 , wherein the masking material is Rubrene. 8. The method of claim 6 , further including removing the masking material. 9. The method of claim 6 , further including removing the masking material by an etching or chemical mechanical polishing process.
by using coherent radiation, e.g. using a laser · CPC title
Gettering within semiconductor bodies · CPC title
Diffusion for doping of conductive or resistive layers · CPC title
Generic processes or apparatus for manufacture or treatments not covered by the other groups of this subclass · CPC title
Fuses, i.e. interconnections changeable from conductive to non-conductive · CPC title
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