Constrained nanosecond laser anneal of metal interconnect structures

Patent metadata

Field	Value
Publication number	US-9412658-B2
Application number	US-201414490792-A
Country	US
Kind code	B2
Filing date	Sep 19, 2014
Priority date	Sep 19, 2014
Publication date	Aug 9, 2016
Grant date	Aug 9, 2016

Abstract

In-situ melting and crystallization of sealed cooper wires can be performed by means of laser annealing for a duration of nanoseconds. The intensity of the laser irradiation is selected such that molten copper wets interconnect interfaces, thereby forming an interfacial bonding arrangement that increases specular scattering of electrons. Nanosecond-scale temperature quenching preserves the formed interfacial bonding. At the same time, the fast crystallization process of sealed copper interconnects results in large copper grains, typically larger than 80 nm in lateral dimensions, on average. A typical duration of the annealing process is from about 10's to about 100's of nanoseconds. There is no degradation to interlayer low-k dielectric material despite the high anneal temperature due to ultra short duration that prevents collective motion of atoms within the dielectric material.

First claim

What is claimed is:

1. A method of annealing a metal interconnect structure comprising:
providing a metal interconnect structure comprising a first metallic structure embedded within at least one dielectric material layer located on a substrate,
the first metallic structure comprising a stack of a metallic liner and a first copper-containing portion embedded within said metallic liner,
wherein a bottom surface of a dielectric cap layer contacts an entire top surface of said first metallic structure, and wherein each surface of said first metallic structure is in physical contact with said at least one dielectric material layer, an underlying second metallic structure located underneath said first metallic structure, a sidewall surface of an underlying dielectric layer, or said bottom surface of said dielectric cap layer;
melting said first copper-containing portion of said first metallic structure by a laser irradiation, wherein an entirety of said first copper-containing portion melts during said laser irradiation; and
cooling said first metallic structure, wherein recrystallization of said first copper-containing portion of said first metallic structure occurs during a cool down period after said laser irradiation, and wherein said recrystallization of said first copper-containing portion proceeds from a bottom surface and sidewall surfaces of a melted state of said first copper-containing portion toward a top surface of said melted state of said first copper-containing portion.

2. The method of claim 1 , wherein a wettable interface is formed between said metallic liner and said first copper-containing portion in a melted state during said laser irradiation.

3. The method of claim 1 , wherein said first copper-containing portion includes copper at an atomic concentration greater than 90%.

4. The method of claim 1 , wherein said metal interconnect structure further comprises a third metallic structure comprising a second copper-containing portion embedded within said at least one dielectric material layer,
wherein a top surface of said third metallic structure is located within a horizontal plane located at, or underneath, another horizontal plane including a bottom surface of said first metallic structure, and said method further comprises simultaneously melting the first copper-containing portion of said first metallic structure and the second copper-containing portion of said third metallic structure by said laser irradiation.

5. The method of claim 4 , further comprising simultaneously recrystallizing said first copper-containing portion and said second copper-containing portion.

6. The method of claim 1 , wherein said laser irradiation is performed by irradiating a plurality of laser pulses onto said metal interconnect structure.

7. The method of claim 1 , wherein said laser irradiation is performed by at least one laser pulse that is irradiated within a time period having a duration less than 1 microsecond at said metallic structure.

8. The method of claim 1 , wherein said at least one dielectric material layer includes at least one of undoped silicate glass (USG), a doped silicate glass, a non-porous organosilicate glass (OSG), and a porous organosilicate glass.

9. The method of claim 1 , wherein said metallic structure is in physical contact with a dielectric material selected from a porous organosilicate glass (OSG) or a non-porous organosilicate glass.

10. The method of claim 9 , wherein a portion of said dielectric material in contact with said metallic structure has a same composition prior to said laser irradiation and after said recrystallization of the first copper-containing portion of said first metallic structure.

11. The method of claim 1 , wherein there is at least one non-copper element in said first copper-containing portion, and wherein said at least one non-copper element segregates to a top surface of said first copper-containing portion during said recrystallization of said first copper-containing portion.

12. The method of claim 1 wherein said substrate is a semiconductor substrate having at least one semiconductor device thereupon.

13. The method of claim 12 , further comprising scanning a laser beam over different areas of said at least one dielectric material layer during said laser irradiation.

14. The method of claim 1 , wherein said metal interconnect structure includes a metal line having a uniform width.

15. The method of claim 1 , wherein said metal interconnect structure includes an integrated line and via structure including a metal line and at least one conductive via structure of integral construction with said metal line.

16. A method of annealing a metal interconnect structure comprising:
providing a metal interconnect structure containing a first metallic structure comprising copper or a copper alloy that is embedded within at least one dielectric material layer located on a substrate, wherein a bottom surface of a dielectric cap layer contacts an entire top surface of said first metallic structure, and wherein each surface of said first metallic structure is in physical contact with said at least one dielectric material layer, an underlying second metallic structure located underneath said first metallic structure, a sidewall surface of an underlying dielectric layer, or said bottom surface of said dielectric cap layer;
melting a copper-containing portion of said first metallic structure by a laser irradiation, wherein said laser irradiation comprises irradiating at least one first laser pulse at an infrared wavelength, and irradiating at least one second laser pulse having a wavelength within a visible wavelength range and applied after said at least one first laser pulse, wherein said at least one first laser pulse and said at least one second laser pulse are both irradiated within a single time period having a duration less than 1 microsecond; and
cooling said first metallic structure, wherein recrystallization of said copper-containing portion of said first metallic structure occurs during a cool down period after said laser irradiation.

17. A method of annealing a metal interconnect structure comprising:
providing a metal interconnect structure containing
a first metallic structure comprising copper or a copper alloy that is embedded within at least one dielectric material layer located on a substrate, wherein a bottom surface of a dielectric cap layer contacts an entire top surface of said first metallic structure, and wherein each surface of said first metallic structure is in physical contact with said at least one dielectric material layer, an underlying second metallic structure located underneath said first metallic structure, a sidewall surface of an underlying dielectric layer, or said bottom surface of said dielectric cap layer; and
a third metallic structure comprising copper or another copper alloy that is embedded within said at least one dielectric material layer, wherein a top surface of said third metallic structure is located within a horizontal plane located at, or underneath, another horizontal plane including a bottom surface of said first metallic structure;

simultaneously melting a copper-containing portion of said first metallic structure and a copper-containing portion of said third metallic structure by a laser irradiation; and
cooling said first metallic structure, wherein recrystallization of said copper-containing portion of said first metallic structure occurs during a cool down period after said laser irradiation.

18. The method of claim 17 , wherein said laser irradiation i

Assignees

• IBM
• Globalfoundries Inc

Inventors

• Gluschenkov Oleg
• Krishnan Siddarth A
• Nag Joyeeta
• Simon Andrew H
• Ray Shishir

Classifications

• H10W20/055

  by formation methods other than physical vapour deposition [PVD], chemical vapour deposition [CVD] or liquid deposition · CPC title

• H10W20/033

  in openings in dielectrics · CPC title

• H10W20/4424

  Copper alloys · CPC title

• H10W20/4421

  the principal metal being copper · CPC title

• H10W20/425

  Barrier, adhesion or liner layers · CPC title