Substrate treatment apparatus and manufacturing method of semiconductor device

Patent metadata

Field	Value
Publication number	US-10879087-B2
Application number	US-201815920956-A
Country	US
Kind code	B2
Filing date	Mar 14, 2018
Priority date	Mar 17, 2017
Publication date	Dec 29, 2020
Grant date	Dec 29, 2020

Abstract

According to an embodiment, a substrate treatment apparatus includes a hair member including a noble metal, and a liquid chemical supply member to supply a liquid chemical. While a tip part of the hair member is contact with a predetermined surface of a metal, the liquid chemical is supplied onto the surface of the metal, and the metal is removed with etching.

First claim

The invention claimed is:

1. A substrate treatment apparatus comprising:
a hair member comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and

a liquid passing nozzle to supply a liquid chemical, wherein
while a tip part of the hair member is contact with a predetermined surface of a metal layer formed on a workpiece to be processed, the liquid passing nozzle being configured to supply the liquid chemical onto the contact portion between the hair member and a surface of the metal layer, and the contact portion of the metal layer is removed with etching.

2. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the hair member.

3. The substrate treatment apparatus according to claim 1 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).

4. The substrate treatment apparatus according to claim 1 , wherein
a first conductor is formed on a surface of the noble metal.

5. The substrate treatment apparatus according to claim 4 , wherein
the first conductor is a carbon material.

6. The substrate treatment apparatus according to claim 4 , wherein
the first conductor is formed on the tip part of the noble metal of the hair member, and a side part of the noble metal of the hair member is exposed.

7. The substrate treatment apparatus according to claim 1 , wherein
the first material is a carbon material.

8. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical has conductivity.

9. The substrate treatment apparatus according to claim 1 , wherein
the liquid chemical has alkalinity.

10. The substrate treatment apparatus according to claim 1 , wherein
the metal of the metal film includes copper.

11. The substrate treatment apparatus according to claim 1 , wherein
the base includes a porous material.

12. A substrate treatment apparatus comprising:
a base;
a plurality of hair members respectively extends from the base toward a workpiece to be processed, the pluralities of hair members each comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and

a liquid passing nozzle to supply a liquid chemical to the workpiece.

13. The substrate treatment apparatus according to claim 12 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the hair member.

14. The substrate treatment apparatus according to claim 12 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).

15. The substrate treatment apparatus according to claim 12 , wherein
a first conductor is formed on a surface of the noble metal.

16. The substrate treatment apparatus according to claim 15 , wherein
the first conductor is a carbon material.

17. The substrate treatment apparatus according to claim 12 , wherein
the first material is a carbon material.

18. A substrate treatment apparatus comprising:
a base;
a plurality of conductive portions having a line shape that respectively extends from the base toward a workpiece to be processed, the pluralities of conductive portions each comprising:
a core part including a first material;
a metal film formed on the core part, the metal being different from the first material;
a noble metal film formed on the metal film, the metal being smaller in specific resistance than the noble metal; and

a liquid passing nozzle to supply a liquid chemical to the workpiece, the liquid passing nozzle being configured to supply a liquid chemical onto a contact portion between the plurality of conductive portions and a surface of the workpiece, and a contact portion of the workpiece is removed with etching.

19. The substrate treatment apparatus according to claim 18 , wherein
the liquid chemical is supplied onto the surface of the metal layer via the conductive portion.

20. The substrate treatment apparatus according to claim 18 , wherein
the noble metal includes at least any of platinum (Pt), gold (Au), silver (Ag) and palladium (Pd).

21. The substrate treatment apparatus according to claim 18 , wherein
a first conductor is formed on a surface of the noble metal.

22. The substrate treatment apparatus according to claim 21 , wherein
the first conductor is a carbon material.

23. The substrate treatment apparatus according to claim 18 , wherein
the first material is a carbon material.

Assignees

• Toshiba Memory Corp

Inventors

• Yoshimizu Yasuhito
• Akeboshi Yuya
• Ito Fuyuma
• Kitagawa Hakuba

Classifications

• H10P72/0426

  with the semiconductor substrates being dipped in baths or vessels · CPC title

• H10P72/0424

  using mainly spraying means, e.g. nozzles · CPC title

• H10P72/0412

  using mainly scrubbing means, e.g. brushes · CPC title

• H10P50/667 Primary

  by liquid etching only · CPC title

• H10P50/73

  using masks for insulating materials · CPC title