Film forming method

Patent metadata

Field	Value
Publication number	US-10872764-B2
Application number	US-201816132729-A
Country	US
Kind code	B2
Filing date	Sep 17, 2018
Priority date	Sep 19, 2017
Publication date	Dec 22, 2020
Grant date	Dec 22, 2020

Abstract

Disclosed is a film forming method including forming a metal oxide film on a base film by alternately supplying a metal-containing gas and a plasmatized oxidizing gas. The metal-containing gas is changed from a first metal-containing gas having no halogen to a second metal-containing gas different from the first metal-containing gas during the film forming of the metal oxide film.

First claim

What is claimed is:

1. A film forming method comprising:
forming a first metal oxide film on a base film during a first period of time by alternately supplying a first metal-containing gas and a plasmatized oxidizing gas to the base film; and
forming a second metal oxide film on the first metal oxide film during a second period of time by alternately supplying a second metal-containing gas and the plasmatized oxidizing gas to the first metal oxide film,
wherein the first metal-containing gas does not include halogen and the second metal-containing gas is different from the first metal-containing gas, and
wherein the first metal-containing gas and the second metal-containing gas contain a same metal element.

2. The film forming method of claim 1 , wherein the metal oxide film formed using the first metal-containing gas has a thickness of 1 nm or less.

3. The film forming method of claim 1 , wherein the second metal-containing gas includes the halogen.

4. The film forming method of claim 3 , wherein the halogen is chlorine.

5. The film forming method of claim 1 , wherein the first metal-containing gas is tetrakis(dimethylamino)titanium (TDMAT).

6. The film forming method of claim 1 , wherein the second metal-containing gas is TiCl4.

7. The film forming method of claim 1 , wherein the base film is an amorphous carbon film having a predetermined pattern.

8. A film forming method comprising:
forming a metal oxide film on a workpiece using a film forming apparatus including a placing table on which the workpiece is placed and an impedance adjustment circuit provided to adjust an impedance between the placing table and a ground,
wherein the metal oxide film is formed by:
forming a first metal oxide film on the workpiece during a first period of time by alternately supplying a first metal-containing gas and a plasmatized oxidizing gas to the workpiece; and
forming a second metal oxide film on the first metal oxide film during a second period of time by alternately supplying a second metal-containing gas and the plasmatized oxidizing gas to the first metal oxide film,
wherein the impedance adjustment circuit is adjusted such that the impedance changes from a first impedance to a second impedance lower than the first impedance during the film forming of the metal oxide film, and
wherein the first metal-containing gas and the second metal-containing gas contain a same metal element.

Assignees

• Tokyo Electron Ltd

Inventors

• Iwashita Shinya
• Kikuchi Takamichi
• Noro Naotaka
• Hasegawa Toshio
• Moriya Tsuyoshi

Classifications

• H10P14/69394

  the material containing titanium, e.g. TiO2 · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/668

  the materials being characterised by the deposition precursor materials · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10P14/6336 Primary

  in the presence of a plasma [PECVD] · CPC title