Method for forming film having low resistance and shallow junction depth

Patent metadata

Field	Value
Publication number	US-2016240367-A1
Application number	US-201514622603-A
Country	US
Kind code	A1
Filing date	Feb 13, 2015
Priority date	Feb 13, 2015
Publication date	Aug 18, 2016
Grant date	—

Abstract

A method for forming on a substrate a doped silicon oxide film with a cap film, includes: forming an arsenosilicate glass (ASG) film as an arsenic (As)-doped silicon oxide film on a substrate; continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation; and continuously forming a silicon nitride (SiN) film as a cap film on the treated surface of the ASG film.

First claim

1 . A method for forming on a substrate a doped silicon oxide film with a cap film, comprising:
(i) forming an arsenosilicate glass (ASG) film having a desired thickness as an arsenic (As)-doped silicon oxide film on a substrate; (ii) after completion of step (i), continuously treating a surface of the ASG film with a treating gas constituted by Si, N, and H without excitation of the treating gas so as to adsorb the treating gas on the surface of the ASG film; and (iii) after completion of step (ii), continuously forming a silicon nitride (SiN) film as a cap film on the treating gas-adsorbed surface of the ASG film.

2 . The method according to claim 1 , wherein all the gases including the treating gas used in step (ii) are identical to all the gases used in step (iii).

3 . The method according to claim 1 wherein in step (ii), the treating gas is supplied with a noble gas.

4 . The method according to claim 1 , wherein the treating gas comprises N 2 gas, SiH 4 gas, and H 2 gas.

5 . The method according to claim 1 , wherein step (ii) is conducted at a temperature of 100° C. to 300° C.

6 . The method according to claim 1 , wherein the concentration of As in the ASG film is approximately 1E+22 atom/cm 3 .

7 . The method according to claim 1 , wherein the thickness of the ASG film formed in step (i) is approximately 5 nm or less.

8 . The method according to claim 1 , wherein in step (i), the ASG film is formed by atomic layer deposition (ALD) with solid-state doping.

9 . The method according to claim 8 , wherein the solid-state doping is conducted at a temperature of approximately 300° C. or lower.

10 . The method according to claim 8 , wherein the ALD is a plasma-enhanced ALD.

11 . The method according to claim 1 , wherein the thickness of the SiN film formed in step (iii) is approximately 5 nm or less.

12 . The method according to claim 1 , wherein the substrate is a silicon wafer.

13 . The method according to claim 1 , wherein the SiN film is deposited by cyclic CVD.

14 . The method according to claim 13 , wherein the cyclic CVD comprises feeding a precursor for the SiN film in pulses to a reaction space while maintaining pressure of the reaction space.

15 . The method according to claim 1 , further comprising, after step (iii), annealing the SiN film formed on the ASG film.

16 . The method according to claim 15 , wherein a sheet resistance (Rs) and an As-junction depth (Xj) of 5E+18 atom/cm 3 at an interface between the ASG film and the substrate after the annealing step are approximately 500 ohm/sq or less, and approximately 5 nm or less, respectively.

17 . The method according to claim 15 , wherein the in-film concentration of As in the ASG film is approximately 1E+22 atom/cm 3 .

18 . The method according to claim 1 , wherein steps (i) to (iii) are conducted in a same reaction chamber.

Assignees

• Asm Ip Holding Bv

Inventors

• Kimura Yosuke
• De Roest David

Classifications

• H10P14/69433

  the material being a silicon nitride not containing oxygen, e.g. SixNy or SixByNz · CPC title

• H10P14/6922

  the material containing Si, O and at least one of H, N, C, F or other non-metal elements, e.g. SiOC, SiOC:H or SiONC · CPC title

• H10P14/6687

  the compound comprising silicon and nitrogen · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title