Conformal 3D non-planar multi-layer circuitry
US-9894760-B2 · Feb 13, 2018 · US
US10827608B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10827608-B2 |
| Application number | US-201916351250-A |
| Country | US |
| Kind code | B2 |
| Filing date | Mar 12, 2019 |
| Priority date | Aug 9, 2012 |
| Publication date | Nov 3, 2020 |
| Grant date | Nov 3, 2020 |
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A method for making conformal non-planar multi-layer circuitry is described. The method can include providing a substrate having a non-planar surface and depositing a first conformal dielectric layer on the substrate, the first conformal dielectric layer conforming to the non-planar surface of the substrate and having a non-planar surface. The method can also include applying a first conformal circuitry layer on the first conformal dielectric layer. The method can include depositing a second conformal dielectric layer on the first conformal circuitry layer, the second conformal dielectric layer conforming to a non-planar surface of the first conformal circuitry layer, and applying a second conformal circuitry layer on the second conformal dielectric layer. Successive layers can be sequentially deposited.
Opening claim text (preview).
What is claimed is: 1. A method of forming a multi-layer circuit, comprising: providing a substrate having a first non-planar surface; forming a conformal circuitry layer over the substrate, the conformal circuitry layer conforming to the first non-planar surface of the substrate, and the conformal circuitry layer having a second non-planar surface; forming a copper circuitry layer over the conformal circuitry layer, the copper circuitry layer conforming to the second non-planar surface of the conformal circuitry layer, and the copper circuitry layer having a third non-planar surface; depositing a first conformal dielectric layer over the substrate, the first conformal dielectric layer conforming to the first non-planar surface of the substrate and the first conformal dielectric layer having a fourth non-planar surface; and drilling at least one micro via into the first conformal dielectric layer, the at least one micro via exposing the conformal circuitry layer, wherein the copper circuitry layer contacts the conformal circuitry layer through the at least one micro via. 2. The method of claim 1 , further comprising: depositing a second conformal dielectric layer over the copper circuitry layer, the second conformal dielectric layer conforming to the third non-planar surface of the copper circuitry layer, and the second conformal dielectric layer having a fourth non-planar surface. 3. The method of claim 2 , wherein the depositing the second conformal dielectric layer includes performing a vapor deposition process until the second conformal dielectric layer has a thickness of about 2 mils. 4. The method of claim 1 , wherein the forming of the conformal circuitry layer includes sputtering or electroplating a chromium-copper alloy layer over the substrate. 5. The method of claim 4 , wherein the chromium-copper alloy layer has a thickness of about 1 micron. 6. The method of claim 1 , wherein the forming of the copper circuitry layer includes sputtering or electroplating a chromium-copper alloy layer over the conformal circuitry layer. 7. The method of claim 1 , wherein at least one of the conformal circuitry layer and the copper circuitry layer has a thickness of about 12.7 microns.
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the metal substrate being covered by an inorganic insulating layer · CPC title
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