Apparatus for and method of fabricating semiconductor devices

Patent metadata

Field	Value
Publication number	US-10818839-B2
Application number	US-201816149507-A
Country	US
Kind code	B2
Filing date	Oct 2, 2018
Priority date	Mar 15, 2018
Publication date	Oct 27, 2020
Grant date	Oct 27, 2020

Abstract

An apparatus of fabricating a semiconductor device may include a chamber including a housing and a slit valve used to open or close a portion of the housing, a heater chuck provided in a lower region of the housing and used to heat a substrate, a target provided over the heater chuck, a plasma electrode provided in an upper region of the housing and used to generate plasma on the target, a heat-dissipation shield surrounding the inner wall of the housing between the plasma electrode and the heater chuck, and an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate.

First claim

What is claimed is:

1. An apparatus for fabricating a semiconductor device, comprising:
a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
a heater chuck provided in a lower region of the housing and configured to heat a substrate;
a heat-dissipation shield provided along an inner wall of the housing and outside the heater chuck; and
an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate,
wherein the heat-dissipation shield comprises a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.

2. The apparatus of claim 1 , wherein the edge heating structure comprises a lower lamp that is provided below a level of a top surface of the slit valve and adjacent to an edge region of the heater chuck.

3. The apparatus of claim 2 , wherein the edge heating structure further comprises an upper lamp that is provided above a level of a top surface of the slit valve.

4. The apparatus of claim 1 , further comprising a shaft, which is provided below the heater chuck and is configured to rotate the heater chuck,
wherein the heat-dissipation shield comprises a first sector shield, which is connected to the shaft and is configured to open or close the first opening of the tube shield by rotation of the shaft.

5. The apparatus of claim 4 , further comprising a first branch arm, which diverges from the shaft and is connected to the first sector shield.

6. The apparatus of claim 4 , wherein, when the portion of the housing is closed by the slit valve, the first opening is closed by the first sector shield.

7. The apparatus of claim 1 , further comprising a shutter structure, which is located outside the tube shield and is movable to cover the substrate on the heater chuck,
wherein the tube shield has a second opening configured to allow the shutter structure to pass therethrough.

8. The apparatus of claim 7 , wherein the shutter structure comprises:
a shutter driver disposed outside the tube shield;
a shutter plate configured to prevent a particle from being deposited on the substrate; and
a shutter arm connecting the shutter plate to the shutter driver,
wherein when the shutter driver is rotated, the shutter plate is moved outside the heater chuck by the shutter arm,
wherein the second opening is closed by a second sector shield, when the shutter plate is moved outside the tube shield, and
wherein the second sector shield is connected to a shaft and is configured to close the second opening by rotation of the shaft.

9. The apparatus of claim 7 , wherein the heat-dissipation shield further comprises a second sector shield, which is connected to a shaft and configured to open or close the second opening by rotation of the shaft.

10. The apparatus of claim 9 , further comprising a second branch arm, which diverges from the shaft and is connected to the second sector shield.

11. An apparatus for fabricating a semiconductor device, comprising:
a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
a heater chuck provided in a lower region of the housing and configured to heat a substrate;
a target provided over the heater chuck, the target containing a source material of a thin film to be formed on the substrate;
a plasma electrode provided in an upper region of the housing and configured to generate plasma on the target;
a heat-dissipation shield surrounding an inner wall of the housing between the plasma electrode and the heater chuck; and
an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and configured to heat the heat-dissipation shield and an edge region of the substrate and to reduce a difference in temperature between center and edge regions of the substrate,
wherein the heat-dissipation shield comprises a tube shield, which extends from a top portion of the housing to a region below the heater chuck and has a first opening adjacent to the slit valve.

12. The apparatus of claim 11 , wherein the edge heating structure comprises:
a lower lamp provided below a level of a top surface of the slit valve and an edge region of the heater chuck; and
an upper lamp provided above a level of a top surface of the slit valve.

13. The apparatus of claim 11 , further comprising a shaft provided below the heater chuck and configured to rotate the heater chuck,
wherein the tube shield has a second opening facing the first opening, and
wherein the heat-dissipation shield further comprises:
a first sector shield, which is connected to the shaft and is configured to open or close the first opening of the tube shield by rotation of the shaft; and
a second sector shield, which is connected to the shaft and is configured to open or close the second opening by rotation of the shaft.

14. The apparatus of claim 13 , further comprising:
a first branch arm, which diverges from one portion of the shaft and is connected to the first sector shield; and
a second branch arm, which diverges from an opposite portion of the shaft and is connected to the second sector shield.

15. An apparatus for fabricating a semiconductor device, comprising:
a chamber including a housing and a slit valve, wherein the slit valve is configured to open or close a portion of the housing;
a heater chuck provided in a lower region of the housing and configured to heat a substrate;
a heat-dissipation shield provided along an inner wall of the housing and outside the heater chuck; and
an edge heating structure provided between the heat-dissipation shield and the inner wall of the housing and surrounding the heat-dissipation shield,
wherein the heat-dissipation shield comprises a tube shield, which extends from a top portion of the housing to a region below the heater chuck.

16. The apparatus of claim 15 , wherein the tube shield has a first opening adjacent to the slit valve and a second opening facing the first opening.

17. The apparatus of claim 15 , wherein the edge heating structure comprises:
a lower lamp provided below a level of a top surface of the slit valve and an edge region of the heater chuck; and
an upper lamp provided above a level of a top surface of the slit valve.

18. The apparatus of claim 15 , wherein the edge heating structure comprises a lower lamp that is provided below a level of a top surface of the slit valve and adjacent to an edge region of the heater chuck.

19. The apparatus of claim 18 , wherein the edge heating structure further comprises an upper lamp that is provided above a level of a top surface of the slit valve.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Jung Jaeho
• Kim Kyoung Sun
• Park Jeonghee
• Park Jiho
• Park Changyup

Classifications

• H10N70/026 Primary

  by physical vapor deposition, e.g. sputtering · CPC title

• H01J37/32522 Primary

  Temperature · CPC title

• H01J37/3414

  Targets · CPC title

• H01J37/32733

  Means for moving the material to be treated · CPC title

• H01J2237/332

  Coating · CPC title