Plasma processing apparatus

Patent metadata

Field	Value
Publication number	US-10763087-B2
Application number	US-201816140948-A
Country	US
Kind code	B2
Filing date	Sep 25, 2018
Priority date	Sep 26, 2017
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

A plasma processing apparatus includes a stage including a lower electrode in an inner space of a chamber main body. An upper electrode is provided above the stage. A first radio frequency power supply is electrically connected to the upper electrode through a power feed conductor. A second radio frequency power supply is electrically connected to a lower electrode. A ground conductor extends above the chamber main body to cover the upper electrode. The ground conductor provides an external space at the outside thereof on the side of the inner space. the third portion, the external space being provided on the second portion and above the inner space. The external space is spaced upward from the upper electrode and is shielded from the upper electrode by the ground conductor. An electromagnet is disposed in the external space.

First claim

What is claimed is:

1. A plasma processing apparatus comprising:
a chamber main body;
a gas supply unit configured to supply a gas to an inner space provided by the chamber main body;
a stage configured to provide a mounting region for a target object provided in the inner space, a center of the mounting region being positioned on a central axis of the chamber main body;
a lower electrode provided in the stage;
an upper electrode provided above the stage with the inner space interposed therebetween;
a power feed conductor connected to the upper electrode, the power feed conductor extending upward from the upper electrode;
a first radio frequency power supply configured to supply first radio frequency waves and electrically connected to the upper electrode through the power feed conductor;
a second radio frequency power supply configured to supply second radio frequency waves having a frequency lower than a frequency of the first radio frequency waves and electrically connected to the lower electrode;
an electromagnet provided above the upper electrode and configured to generate distribution of a magnetic field having a horizontal component, greater than a horizontal component on the central axis, at a position far from the central axis in the inner space; and
a ground conductor grounded and extending above the chamber main body to cover the upper electrode, wherein the ground conductor includes:
a cylindrical first portion extending upward from the chamber main body;
a second portion spaced upwardly from the upper electrode, the second portion extending from the first portion toward the central axis to provide a first space on the upper electrode together with the first portion;
a cylindrical third portion positioned closer to the central axis compared to the first portion, the third portion extending upward from the second portion to provide a second space communicating with the first space,
wherein the power feed conductor extends upward through the first space and the second space, and the electromagnet is disposed in an external space provided by the ground conductor at the outside of the third portion, the external space being provided on the second portion and above the inner space.

2. The plasma processing apparatus of claim 1 , wherein the ground conductor further includes:
a fourth portion extending above the second portion from the third portion in a radial direction with respect to the central axis;
a cylindrical fifth portion, farther from the central axis compared to the third portion, extending upward from the fourth portion; and
a sixth portion extending above the fourth portion from the fifth portion toward the central axis,
wherein the power feed conductor extends upward through a third space surrounded by the fourth portion, the fifth portion and the sixth portion and communicating with the second space.

3. The plasma processing apparatus of claim 2 , further comprising a first pipe extending upward from the upper electrode through the first space and the second space and extending laterally through the third space to the outside of the ground conductor.

4. The plasma processing apparatus of claim 2 , wherein the upper electrode constitutes a shower head configured to inject a gas from the gas supply unit to the inner space, and
the plasma processing apparatus further comprises:
a second pipe extending upward from the upper electrode through the first space and the second space and extending laterally through the third space to the outside of the ground conductor and configured to supply the gas from the gas supply unit to the shower head.

5. The plasma processing apparatus of claim 2 , further comprising:
a DC power supply configured to generate a negative DC voltage to be applied to the upper electrode; and
a wiring configured to connect the DC power supply and the upper electrode,
wherein the wiring extends upward from the upper electrode through the first space and the second space and extends laterally through the third space to the outside of the ground conductor.

6. The plasma processing apparatus of claim 1 , wherein the electromagnet has a coil wound around the central axis.

7. The plasma processing apparatus of claim 6 , wherein an average value of an inner diameter and an outer diameter of the coil is equal to or greater than a distance between the central axis and an edge of the target object.

8. The plasma processing apparatus of claim 1 , wherein a frequency of the second radio frequency waves is greater than 13.56 MHz.

9. The plasma processing apparatus of claim 8 , wherein the frequency of the second high frequency waves is greater than or equal to 40 MHz.

10. The plasma processing apparatus of claim 8 , wherein the frequency of the second high frequency waves is greater than or equal to 60 MHz.

Assignees

• Tokyo Electron Ltd

Inventors

• Takahashi Shuichi
• Miyadate Takaharu
• Takasu Norinao
• Ito Etsuji
• Yokota Akihiro
• Okunishi Naohiko

Classifications

• H10P72/0434

  mainly by convection · CPC title

• H10P50/283

  by chemical means · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P72/0421

  for drying etching · CPC title

• H10D30/024

  of fin field-effect transistors [FinFET] · CPC title