Methods and apparatus for depositing yttrium-containing films

Patent metadata

Field	Value
Publication number	US-10760159-B2
Application number	US-201715649584-A
Country	US
Kind code	B2
Filing date	Jul 13, 2017
Priority date	Jul 13, 2017
Publication date	Sep 1, 2020
Grant date	Sep 1, 2020

Abstract

Methods for depositing a yttrium-containing film through an atomic layer deposition process are described. Some embodiments of the disclosure utilize a plasma-enhanced atomic layer deposition process. Also described is an apparatus for performing the atomic layer deposition of the yttrium containing films.

First claim

What is claimed is:

1. A method of depositing a film, the method comprising:
exposing a substrate to a yttrium precursor and a silicon precursor to form a silicon-yttrium species on the substrate, the yttrium precursor comprising a complex with a general formula YR 1 R 2 R 3 , where R 1 , R 2 and R 3 are independently selected from halides, carbonyl, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes; and
exposing the substrate to a nitrogen reactant to react with the silicon-yttrium species on the substrate to form a silicon-yttrium nitride film.

2. The method of claim 1 , wherein the nitrogen reactant comprises one or more of nitrogen, ammonia or hydrazine.

3. The method of claim 1 , wherein the nitrogen reactant comprises a reactant plasma.

4. The method of claim 1 , wherein the silicon precursor comprises a species with a general formula Si n X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl.

5. The method of claim 1 , wherein the yttrium precursor and the silicon precursor are exposed to the substrate at the same time.

6. The method of claim 1 , wherein the yttrium precursor and the silicon precursor are exposed to the substrate sequentially.

7. The method of claim 4 , further comprising exposing the silicon-yttrium nitride film on the substrate to a treatment plasma to change a property of the film.

8. The method of claim 7 , wherein the treatment plasma comprises one or more of nitrogen, argon, hydrogen, or helium.

9. A method comprising:
sequentially exposing a substrate to a yttrium precursor and a first nitrogen reactant to form a yttrium nitride film, the yttrium precursor comprises a yttrium species with a general formula YR 1 R 2 R 3 , where R 1 , R 2 and R 3 are independently selected from halides, carbonyls, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes and at least one of R 1 , R 2 or R 3 is a diazadiene, the first nitrogen reactant comprising one or more of ammonia, nitrogen, hydrazine, or plasmas thereof; and
sequentially exposing the substrate to a silicon precursor and a second nitrogen reactant to form a silicon nitride film.

10. The method of claim 9 , wherein the silicon precursor comprises a species
with a general formula Si n X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl.

11. The method of claim 9 , wherein the second nitrogen reactant comprises one or more of ammonia, nitrogen, hydrazine, or plasmas thereof.

12. The method of claim 9 , further comprising exposing the yttrium nitride film to a first treatment plasma to change a property of the film.

13. The method of claim 9 , further comprising exposing the silicon nitride film to a second treatment plasma to change a property of the silicon nitride film.

14. The method of claim 9 , further comprising repeating the formation of the yttrium nitride film and the silicon nitride film to form a silicon-yttrium nitride film of a predetermined thickness.

15. A method of depositing a film, the method comprising:
exposing a substrate to a yttrium precursor to form a yttrium species on the substrate, the yttrium precursor comprising a complex with a general formula YR 1 R 2 R 3 , where R 1 , R 2 and R 3 are independently selected from halides, carbonyl, cyclopentadienes, amines, acac, hfac, amidinates or diazadienes;
exposing the substrate to a nitrogen reactant to react with the yttrium species on the substrate to form a yttrium nitride film;
exposing the yttrium nitride film to a silicon precursor to form a silicon-yttrium nitride film on the substrate.

16. The method of claim 15 , wherein the nitrogen reactant comprises one or more of nitrogen, ammonia or hydrazine.

17. The method of claim 15 , wherein the nitrogen reactant comprises a reactant plasma.

18. The method of claim 15 , wherein the silicon precursor comprises a species with a general formula Si a X a R 2n+2−a , Si(NRR′) a R″ 4−a , or a siloxane, where n is 1 to 4, a is 0 to 2n+2, X is a halide and R, R′ and R″ are independently selected from H, alkyl or aryl.

19. The method of claim 18 , further comprising exposing the silicon-yttrium nitride film on the substrate to a treatment plasma to change a property of the film.

20. The method of claim 19 , wherein the treatment plasma comprises one or more of nitrogen, argon, hydrogen, or helium.

Assignees

• Applied Materials Inc

Inventors

• Kalutarage Lakmal C
• Saly Mark
• Knisley Thomas
• Schmiege Benjamin
• Thompson David

Classifications

• C23C16/45544

  characterized by the apparatus · CPC title

• C23C16/45565

  Shower nozzles · CPC title

• C23C16/54

  Apparatus specially adapted for continuous coating · CPC title

• C23C16/45536

  Use of plasma, radiation or electromagnetic fields · CPC title

• H10P72/70

  for supporting or gripping · CPC title