Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

Patent metadata

Field	Value
Publication number	US-10658454-B2
Application number	US-201916573156-A
Country	US
Kind code	B2
Filing date	Sep 17, 2019
Priority date	Apr 26, 2017
Publication date	May 19, 2020
Grant date	May 19, 2020

Abstract

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

First claim

What is claimed is:

1. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer comprising at least one of hafnium and zirconium;
a first inserting layer disposed between the first electrode and the dielectric layer; and
a second inserting layer disposed between the dielectric layer and the second electrode,
wherein the first inserting layer comprises a first conductive material different from the hafnium or zirconium that forms the dielectric layer,
wherein the second inserting layer comprises a second conductive material different from the hafnium or zirconium that forms the dielectric layer, and
wherein a lattice constant of each of the first and second conductive materials has a lattice mismatch of 2% or less with a horizontal lattice constant of a dielectric material of the dielectric layer.

2. The capacitor of claim 1 , wherein the dielectric material has a tetragonal crystal structure.

3. The capacitor of claim 2 , wherein the dielectric layer comprises hafnium oxide having the tetragonal crystal structure or zirconium oxide having the tetragonal crystal structure.

4. The capacitor of claim 1 , wherein the first electrode comprises titanium nitride, and
wherein the second electrode comprises titanium nitride.

5. The capacitor of claim 1 , wherein at least one of the first inserting layer and the second inserting layer comprise a conductor.

6. The capacitor of claim 1 , wherein the first conductive material has a cubic crystal structure.

7. The capacitor of claim 6 , wherein the second conductive material has a cubic crystal structure.

8. The capacitor of claim 1 , wherein the first conductive material and the second conductive material comprise cobalt, nickel, copper, or Co x N (where 3.5<x<4.5).

9. The capacitor of claim 1 , wherein the first inserting layer and the second inserting layer comprise the same material.

10. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode, the dielectric layer comprising at least one of hafnium and zirconium;
a first inserting layer disposed between the first electrode and the dielectric layer; and
a second inserting layer disposed between the dielectric layer and the second electrode,
wherein the first inserting layer comprises a first material,
wherein the second inserting layer comprises a second material, and
wherein a lattice constant of each of the first and second materials has a lattice mismatch of 2% or less with a horizontal lattice constant of a dielectric material of the dielectric layer,
and further comprising:
a sub-oxide layer disposed between the dielectric layer and the first inserting layer,
wherein the sub-oxide layer comprises the same metal as a metal included in the first inserting layer.

11. The capacitor of claim 10 , wherein a thickness of the sub-oxide layer is in a range from 5 Å to 10 Å.

12. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode;
a first conductive inserting layer disposed between the first electrode and the dielectric layer; and
a second conductive inserting layer disposed between the dielectric layer and the second electrode,
wherein the first conductive inserting layer comprises a first material and the second conductive inserting layer comprises a second material,
wherein the first conductive inserting layer and the second conductive inserting layer comprise the same material, and
wherein a lattice constant of each of the first and second materials has a lattice mismatch of 2% or less with a horizontal lattice constant of a dielectric material of the dielectric layer.

13. The capacitor of claim 12 , wherein the first material and the second material have a cubic crystal structure.

14. The capacitor of claim 12 , wherein the first electrode comprises titanium nitride and the second electrode comprises titanium nitride.

15. The capacitor of claim 12 , wherein the dielectric material has a tetragonal crystal structure.

16. The capacitor of claim 12 , wherein the dielectric layer includes hafnium oxide having a tetragonal crystal structure or zirconium oxide having the tetragonal crystal structure.

17. The capacitor of claim 12 , wherein the first material and the second material comprise cobalt, nickel, copper or Co x N (where 3.5<x<4.5).

18. The capacitor of claim 12 , wherein the dielectric layer includes a first metallic element, and the first conductive inserting layer and the second conductive inserting layer include a different metallic element from the first metallic element.

19. A capacitor comprising:
an interlayer insulating layer on a substrate;
a contact plug in the interlayer insulating layer;
a first electrode on the interlayer insulating layer and electrically connected to the contact plug, the first electrode comprising titanium nitride;
a second electrode spaced apart from the first electrode, the second electrode comprising titanium nitride;
a dielectric layer disposed between the first electrode and the second electrode; and
a first inserting layer disposed between the first electrode and the dielectric layer, the first inserting layer comprising a first material; and
a second inserting layer disposed between the dielectric layer and the second electrode, the second inserting layer comprising a second material,
wherein the first inserting layer and the second inserting layer comprise the same material,
wherein the dielectric layer comprises at least one of hafnium and zirconium, and
wherein a lattice constant of each of the first and second materials has a lattice mismatch of between 0.28% and 2% with a horizontal lattice constant of a dielectric material of the dielectric layer.

20. The capacitor of claim 19 , wherein the first material and the second material comprise a conductor.

21. The capacitor of claim 20 , wherein the conductor is one of cobalt, nickel, copper or Co x N (where 3.5<x<4.5).

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyuho
• Kang Sangyeol
• Kim Suhwan
• Moon Sunmin
• Park Young-Lim
• Seo Jong-Bom
• Jeon Joohyun

Classifications

• H10P14/6314

  of a metallic layer · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6548

  by forming intermediate materials, e.g. capping layers or diffusion barriers · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title