Capacitor, semiconductor device and methods of manufacturing the capacitor and the semiconductor device

Patent metadata

Field	Value
Publication number	US-10453913-B2
Application number	US-201815938234-A
Country	US
Kind code	B2
Filing date	Mar 28, 2018
Priority date	Apr 26, 2017
Publication date	Oct 22, 2019
Grant date	Oct 22, 2019

Abstract

A capacitor includes a first electrode and a second electrode spaced apart from each other, a dielectric layer disposed between the first electrode and the second electrode, and a seed layer disposed between the first electrode and the dielectric layer. The dielectric layer includes a dielectric material having a tetragonal crystal structure. The seed layer includes a seed material that satisfies at least one of a lattice constant condition or a bond length condition.

First claim

What is claimed is:

1. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode; and
a first seed layer disposed between the first electrode and the dielectric layer,
wherein the dielectric layer includes a dielectric material having a tetragonal crystal structure,
wherein the first seed layer includes a first seed material, and
wherein a lattice constant of the first seed material has a lattice mismatch of 2% or less with a horizontal lattice constant of the dielectric material.

2. The capacitor of claim 1 , wherein the first seed material comprises a conductor.

3. The capacitor of claim 1 , wherein a band gap of an oxide of the first seed material is 3 eV or less.

4. The capacitor of claim 1 , wherein a work function of the first seed material is 4.7 eV or more.

5. The capacitor of claim 1 , wherein the first seed material has a cubic crystal structure.

6. The capacitor of claim 1 , wherein the first seed material includes cobalt, nickel, copper, or Co x N (where 3.5<x<4.5).

7. The capacitor of claim 1 , wherein the dielectric layer includes hafnium oxide having the tetragonal crystal structure or zirconium oxide having the tetragonal crystal structure.

8. The capacitor of claim 1 , further comprising:
a second seed layer disposed between the second electrode and the dielectric layer,
wherein the second seed layer includes a second seed material, and
wherein a lattice constant of the second seed material has a lattice mismatch of 2% or less with the horizontal lattice constant of the dielectric material.

9. The capacitor of claim 1 , further comprising:
a sub-oxide layer disposed between the dielectric layer and the first seed layer,
wherein the sub-oxide layer includes the same metal as a metal included in the first seed layer.

10. The capacitor of claim 9 , wherein a thickness of the sub-oxide layer is in a range from 5 Å to 10 Å.

11. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode; and
a metal seed layer disposed between the first electrode and the dielectric layer,
wherein the dielectric layer includes a dielectric material having a tetragonal crystal structure,
wherein the metal seed layer includes a seed material, and
wherein a mismatch between a bond length between metal atoms of the seed material and a bond length between oxygen atoms of the dielectric material is 5% or less.

12. The capacitor of claim 11 , wherein a band gap of an oxide of the seed material is 3 eV or less.

13. The capacitor of claim 11 , wherein a work function of the seed material is 4.7 eV or more.

14. The capacitor of claim 11 , wherein the seed material has a cubic crystal structure.

15. The capacitor of claim 11 , wherein the seed material includes cobalt, nickel, or copper.

16. The capacitor of claim 11 , wherein the dielectric layer includes hafnium oxide having the tetragonal crystal structure or zirconium oxide having the tetragonal crystal structure.

17. A capacitor comprising:
a first electrode and a second electrode spaced apart from each other;
a dielectric layer disposed between the first electrode and the second electrode; and
a seed layer disposed between the first electrode and the dielectric layer, the seed layer including a seed material,
wherein the dielectric layer includes hafnium oxide having a tetragonal crystal structure or zirconium oxide having a tetragonal crystal structure, and
wherein a mismatch between a bond length between atoms of the seed material and a bond length between oxygen atoms of the dielectric layer is 5% or less.

18. The capacitor of claim 17 , wherein the seed layer includes a cobalt layer, a nickel layer, a copper layer, or a Co x N layer (where 3.5<x<4.5).

19. The capacitor of claim 18 , further comprising:
a sub-oxide layer disposed between the dielectric layer and the seed layer,
wherein the sub-oxide layer includes the same metal as a metal included in the seed layer.

20. The capacitor of claim 19 , wherein a thickness of the sub-oxide layer ranges from 5 Å to 10 Å.

21. The capacitor of claim 19 , wherein the metal included in the sub-oxide layer is different from the metal included in the dielectric layer.

Assignees

• Samsung Electronics Co Ltd

Inventors

• Cho Kyuho
• Kang Sangyeol
• Kim Suhwan
• Moon Sunmin
• Park Young-Lim
• Seo Jong-Bom
• Jeon Joohyun

Classifications

• H10P14/6314

  of a metallic layer · CPC title

• H10P14/69395

  the material containing zirconium, e.g. ZrO2 · CPC title

• H10P14/69392

  the material containing hafnium, e.g. HfO2 · CPC title

• H10P14/6548

  by forming intermediate materials, e.g. capping layers or diffusion barriers · CPC title

• H10P14/6544

  to change the morphology of the insulating materials, e.g. transformation of an amorphous layer into a crystalline layer · CPC title