Method for producing ferroelectric thin film

Patent metadata

Field	Value
Publication number	US-8956689-B2
Application number	US-201213471796-A
Country	US
Kind code	B2
Filing date	May 15, 2012
Priority date	May 17, 2011
Publication date	Feb 17, 2015
Grant date	Feb 17, 2015

Abstract

A method for producing a ferroelectric thin film comprising: coating a composition for forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction, calcining the coated composition, and subsequently performing firing the coated composition to crystallize the coated composition, and thereby forming a ferroelectric thin film on the base electrode, wherein the method includes formation of an orientation controlling layer by coating the composition on the base electrode, calcining the coated composition, and firing the coated composition, where an amount of the composition coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferential crystal orientation of the orientation controlling layer in the (100) plane.

First claim

What is claimed is:

1. A method for producing a ferroelectric thin film comprising:
forming a ferroelectric thin film on a base electrode of a substrate having a substrate body and the base electrode that has crystal faces oriented in the (111) direction,
wherein the formation of the ferroelectric thin film includes performing formation of an orientation controlling layer by a process including coating a composition for forming the ferroelectric thin film on the base electrode, performing calcination of the coated composition, and subsequently performing firing of the coated composition to crystallize the coated composition,
where an amount of the composition for forming the ferroelectric thin film coated on the base electrode is controlled such that a thickness of the orientation controlling layer after crystallization is in a range of 35 nm to 150 nm, and thereby controlling the preferred orientation of crystals of the orientation controlling layer in the (100) plane, and
wherein the method further comprises forming a crystal diameter controlling layer on the base electrode before forming the orientation controlling layer, wherein the orientation controlling layer is formed on the crystal diameter controlling layer and the crystal diameter of the orientation controlling layer is equal to the crystal diameter of the crystal diameter controlling layer as a result.

2. The method for producing a ferroelectric thin film according to claim 1 , wherein the formation of the ferroelectric thin film further comprises, after forming the orientation controlling layer, forming a thickness adjusting layer having a preferential crystal orientation that is the same as the preferential crystal orientation of the orientation controlling layer by coating the composition for forming the ferroelectric thin film on the orientation controlling layer, performing calcination of the composition coated on the orientation controlling layer, and performing firing of the composition coated on the orientation controlling layer to achieve the crystallization thereof.

3. The method for producing a ferroelectric thin film according to claim 2 , wherein the calcination for forming the thickness adjusting layer is performed at a temperature in a range of 200° C. to 450° C.

4. The method for producing a ferroelectric thin film according to claim 2 , wherein the formation of the thickness adjusting layer further includes sequentially repeating, for at least one time, the steps of coating the composition for forming the ferroelectric thin film and of performing calcination of the coated composition, wherein the step of performing firing of the coated composition occurs after the sequential repetition of coating and calcination.

5. The method for producing a ferroelectric thin film according to claim 1 , wherein the ferroelectric thin film includes Pb-containing perovskite type oxide, and the composition for forming the ferroelectric thin film includes β-diketone and polyhydric alcohol.

6. The method for producing a ferroelectric thin film according to claim 5 , wherein the β-diketone is acetylacetone and the polyhydric alcohol is propylene glycol.

7. The method for producing a ferroelectric film according to claim 1 , wherein the substrate body is one selected from a silicon substrate and a sapphire substrate.

8. The method for producing a ferroelectric thin film according to claim 1 , wherein the base electrode is made of at least one metal selected from the group consisting of Pt, Ir, and Ru.

9. The method for producing a ferroelectric thin film according to claim 1 , wherein the crystal diameter controlling layer is made of at least one compound selected from the group consisting of lead titanate, lead zircontate titanate, and lead zirconate.

10. The method for producing a ferroelectric thin film according to claim 1 , wherein the calcination for forming the orientation controlling layer is performed at a temperature in a range of 175° C. to 315° C.

Assignees

• Watanabe Toshiaki
• Sakurai Hideaki
• Soyama Nobuyuki
• Doi Toshihiro
• Mitsubishi Materials Corp

Inventors

• Watanabe Toshiaki
• Sakurai Hideaki
• Soyama Nobuyuki
• Doi Toshihiro

Classifications

• H10P14/6342

  Liquid deposition, e.g. spin-coating, sol-gel techniques or spray coating · CPC title

• H10P14/662

  Laminate layers, e.g. stacks of alternating high-k metal oxides (adhesion layers or buffer layers H10P14/6508, H10P14/6548) · CPC title

• H10P14/69398 Primary

  the material having a perovskite structure, e.g. BaTiO3 · CPC title

• H10D1/682 Primary

  having dielectrics comprising perovskite structures · CPC title

• H10D1/696

  comprising multiple layers, e.g. comprising a barrier layer and a metal layer (barrier layers to prevent diffusion of hydrogen or oxygen in perovskite based capacitors H10D1/688) · CPC title