Package-embedded thin-film capacitors, package-integral magnetic inductors, and methods of assembling same

US10643994B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10643994-B2
Application numberUS-201916402588-A
CountryUS
Kind codeB2
Filing dateMay 3, 2019
Priority dateJun 25, 2018
Publication dateMay 5, 2020
Grant dateMay 5, 2020

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  2. Abstract

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  5. First independent claim

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Abstract

Official abstract text for this publication.

Disclosed embodiments include an embedded thin-film capacitor and a magnetic inductor that are assembled in two adjacent build-up layers of a semiconductor package substrate. The thin-film capacitor is seated on a surface of a first of the build-up layers and the magnetic inductor is partially disposed in a recess in the adjacent build up layer. The embedded thin-film capacitor and the integral magnetic inductor are configured within a die shadow that is on a die side of the semiconductor package substrate.

First claim

Opening claim text (preview).

The invention claimed is: 1. A semiconductor package substrate, comprising: a first build-up film including a first lithograph surface; a second and adjacent build-up film including a recess that abuts the first lithographic surface; and a magnetic inductor, wherein the magnetic inductor includes an inductor trace and a first magnetic-particle body within the recess. 2. The semiconductor package substrate of claim 1 , further including a complementary magnetic-particle body that contacts the inductor trace, the first magnetic-particle body and the first build-up film. 3. The semiconductor package substrate of claim 1 , further including: a thin-film capacitor, wherein the thin-film capacitor is seated on the first lithographic surface, and at least partially embedded in the second and adjacent build-up film, wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side; and a first capacitor via that communicates to the die side and that contacts the thin-film capacitor. 4. The semiconductor package substrate of claim 1 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side, further including: a package via that communicates from the die side, through the first build-up film, the second and adjacent build-up film, and that further communicates to the land side. 5. The semiconductor package substrate of claim 2 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side further including: a semiconductive device contacting the die side, wherein the semiconductive device is coupled to the integral magnetic inductor, wherein the semiconductive device forms a die shadow on the die side, and wherein the die shadow overlaps the integral magnetic inductor. 6. The semiconductor package substrate of claim 2 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side further including: a ball-pad array on the die side, where ball-pad pad array is exposed through a die-side solder resist semiconductive device contacting the die side, wherein the ball-pad array is coupled to the integral magnetic inductor, wherein the ball-pad array forms a die shadow on the die side, and wherein the die shadow overlaps the integral magnetic inductor. 7. The semiconductor package substrate of claim 2 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side, and the magnetic inductor is a first magnetic inductor, further including: a subsequent magnetic inductor, wherein the subsequent magnetic inductor is adjacent the first magnetic inductor, wherein the subsequent magnetic inductor includes a subsequent inductor trace and a subsequent first magnetic-particle body within the recess, and a subsequent complementary magnetic-particle body that contacts the subsequent inductor trace, the subsequent first magnetic-particle body and the first build-up film. 8. The semiconductor package substrate of claim 2 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side, wherein the recess is a first recess, and wherein the magnetic inductor is a first magnetic inductor, further including: a subsequent magnetic inductor, wherein the subsequent magnetic inductor is adjacent the first magnetic inductor, wherein the subsequent magnetic inductor includes two subsequent inductor traces and a subsequent first magnetic-particle body within a subsequent recess with the second and adjacent build-up film, and a subsequent complementary magnetic-particle body that contacts the two subsequent inductor traces, the subsequent first magnetic-particle body and the first build-up film. 9. The semiconductor package substrate of claim 2 , wherein the first build-up film and the second and adjacent build-up film are part of a semiconductor package substrate portion that includes a die side and a land side, further including: a semiconductive device contacting the die side, wherein the semiconductive device is coupled to the integral magnetic inductor; an electrical bump on the land side; and a board contacting the electrical bump. 10. The semiconductor package substrate of claim 3 , further including a subsequent capacitor via that communicates to the die side and that contacts the thin-film capacitor. 11. The semiconductor package substrate of claim 3 , wherein the thin-film capacitor includes, beginning at first lithographic surface, a copper-containing layer, a nickel-containing layer, a barium titanate (BTO) containing layer and a copper-containing layer. 12. The semiconductor package substrate of claim 3 , wherein the thin-film capacitor includes, beginning at first lithographic surface, a first metal-containing layer, a subsequent metal-containing layer different from the first metal-containing layer, a dielectric layer and a third metal-containing layer. 13. A process of forming a semiconductor package substrate, comprising: locating an inductor trace and a first magnetic-particle paste in a recess in an adjacent build up film; locating a subsequent complementary magnetic-particle paste adjacent the first magnetic particle paste, wherein the subsequent complementary magnetic-particle paste contacts the inductor trace, and wherein the first and subsequent complementary magnetic-particle paste and the inductor trace are part of a magnetic inductor; forming a land side and a die side that are coupled to the first and second and adjacent build-up films; and wherein the die side includes a die footprint that overlaps the magnetic inductor. 14. The process of claim 13 , wherein the inductor trace is a first inductor trace, further including locating a subsequent inductor trace with the first magnetic-particle paste in the recess in the adjacent build up film; locating the subsequent complementary magnetic-particle paste adjacent the first magnetic particle paste, wherein the subsequent complementary magnetic-particle paste contacts the first inductor trace and the subsequent inductor trace. 15. A computing system, comprising: a first build-up film of a semiconductor package substrate, wherein the first build-up film includes a first lithograph surface, and wherein the semiconductor package substrate includes a die side and a land side; a second and adjacent build-up film including a recess that abuts the first lithographic surface; an integral magnetic inductor, wherein the magnetic inductor includes an inductor trace and a first magnetic-particle body within the recess; a semiconductive device contacting the die side, wherein the semiconductive device is coupled to integral magnetic inductor, wherein the semiconductive device forms a die shadow on the die side, and wherein the die shadow overlaps the integral magnetic inductor; and a board contacting the semiconductor package substrate at the land side. 16. The computing system of claim 15 , further including a complementary magnetic-particle body that contacts the inductor trace, the first magnetic-particle body and the first build-up film. 17. The computing system of claim 15 , further wherein the s

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What does patent US10643994B2 cover?
Disclosed embodiments include an embedded thin-film capacitor and a magnetic inductor that are assembled in two adjacent build-up layers of a semiconductor package substrate. The thin-film capacitor is seated on a surface of a first of the build-up layers and the magnetic inductor is partially disposed in a recess in the adjacent build up layer. The embedded thin-film capacitor and the integral…
Who is the assignee on this patent?
Intel Corp
What technology area does this patent fall under?
Primary CPC classification H01L27/0788. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue May 05 2020 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 9 related publications on this page (citations in our corpus or others sharing the same primary CPC).