Auxiliary exposure apparatus and exposure amount distribution acquisition method

Patent metadata

Field	Value
Publication number	US-10642168-B2
Application number	US-201715720891-A
Country	US
Kind code	B2
Filing date	Sep 29, 2017
Priority date	Oct 4, 2016
Publication date	May 5, 2020
Grant date	May 5, 2020

Abstract

An auxiliary exposure apparatus is for performing auxiliary exposure of applying light of a predetermined wavelength from a laser light source to a resist film on a wafer, separately from exposure processing of transferring a pattern of a mask to the resist film applied on the wafer. The auxiliary exposure apparatus includes a first total reflection mirror that reflects the light from the laser light source toward the wafer; and an imaging device including a light receiving part that receives light after reflected by the wafer.

First claim

What is claimed is:

1. An auxiliary exposure apparatus, separately from an apparatus performing exposure processing of transferring a pattern of a mask to a resist film applied on a substrate, the auxiliary exposure apparatus comprising:
a light source configured to apply auxiliary light of a predetermined wavelength to a resist film on the substrate;
a first reflection member configured to reflect the auxiliary light from the light source toward the substrate;
a light receiving part configured to receive the auxiliary light after reflected by the substrate;
an acquisition unit configured to acquire, for the auxiliary light, a distribution of an exposure amount to the resist film on the substrate, based on a reception result by the light receiving part while scanning the substrate with the auxiliary light; and
a controller configured to control the auxiliary light of the light source in accordance with driving data representing, for each exposure area on the substrate, illuminance for the each exposure area,
wherein the controller is configured to decide the driving data in accordance with the distribution of the exposure amount acquired by the acquisition unit.

2. The auxiliary exposure apparatus according to claim 1 , further comprising:
a second reflection member configured to reflect the auxiliary light reflected by the first reflection member and reflected by the substrate,
wherein the light receiving part receives the auxiliary light reflected by the second reflection member.

3. The auxiliary exposure apparatus according to claim 1 , further comprising:
a moving mechanism configured to move the substrate in a predetermined direction; and
a polygon mirror configured to reflect the auxiliary light from the light source toward the first reflection member,
wherein the moving mechanism moves the substrate to scan the substrate in the predetermined direction with the auxiliary light reflected by the polygon mirror and reflected by the first reflection member, and
wherein the polygon mirror is rotated to scan the substrate in a direction perpendicular to the predetermined direction with the auxiliary light reflected by the polygon mirror and reflected by the first reflection member.

4. The auxiliary exposure apparatus according to claim 1 ,
wherein the first reflection member is provided so that the auxiliary light reflected by the first reflection member is incident on the substrate at a non-right angle to the substrate.

5. The auxiliary exposure apparatus according to claim 1 ,
wherein the light receiving part is a line sensor.

6. The auxiliary exposure apparatus according to claim 5 ,
wherein the light receiving part has sensitivity to an ultraviolet ray.

7. The auxiliary exposure apparatus according to claim 1 ,
wherein the light receiving part has sensitivity to an ultraviolet ray.

8. The auxiliary exposure apparatus according to claim 1 , further comprising
the light source that applies the auxiliary light to the resist film on the substrate, wherein
the auxiliary light from the light source is driven based on the acquired distribution of the exposure amount to the resist film.

9. An exposure amount distribution acquisition method of acquiring a distribution of an exposure amount to a resist film on a substrate, in auxiliary exposure processing performed by an auxiliary exposure apparatus separately from an apparatus performing exposure processing of transferring a pattern of a mask to the resist film applied on the substrate, the exposure amount distribution acquisition method comprising:
in the auxiliary exposure processing, reflecting auxiliary light from a light source configured to emit auxiliary light of a predetermined wavelength, toward the substrate by a first reflection member;
receiving the auxiliary light after reflected by the substrate by a light receiving part;
acquiring, for the auxiliary light, the distribution of the exposure amount to the resist film on the substrate, based on a result of reception of the light by the light receiving part while scanning the substrate with the auxiliary light; and
controlling the auxiliary light of the light source in accordance with driving data representing, for each exposure area on the substrate, illuminance for the each exposure area;
further comprising deciding the driving data in accordance with the distribution of the exposure amount which is acquired.

10. The exposure amount distribution acquisition method according to claim 9 ,
wherein when the auxiliary light after reflected by the substrate is received by the light receiving part, the auxiliary light reflected by the first reflection member and reflected by the substrate is reflected by a second reflection member and received by the light receiving part.

11. The exposure amount distribution acquisition method according to claim 9 , further comprising:
in the auxiliary exposure processing, moving the substrate by a moving mechanism configured to move the substrate in a predetermined direction, and rotating a polygon mirror configured to reflect the auxiliary light from the light source toward the first reflection member; and
receiving the auxiliary light reflected by the polygon mirror and reflected by the first reflection member, by the light receiving part.

12. The exposure amount distribution acquisition method according to claim 9 ,
wherein the auxiliary light reflected by the first reflection member is reflected by the first reflection member so as to be incident on the substrate at a non-right angle to the substrate.

13. The exposure amount distribution acquisition method according to claim 9 , further comprising
in the auxiliary exposure processing, applying the auxiliary light from the light source to the resist film on the substrate, and
driving the auxiliary light from the light source based on the acquired distribution of the exposure amount to the resist film.

Assignees

• Tokyo Electron Ltd

Inventors

• Kashiwagi Hideaki
• Niwa Takafumi
• Koga Norihisa

Classifications

• H10P74/23

  characterised by multiple measurements, corrections, marking or sorting processes · CPC title

• H10P72/0602

  Temperature monitoring · CPC title

• H10P76/00

  Manufacture or treatment of masks on semiconductor bodies, e.g. by lithography or photolithography · CPC title

• H10P72/0604

  Process monitoring, e.g. flow or thickness monitoring · CPC title

• H10P72/0474

  comprising at least one lithography chamber · CPC title