Cleaning formulations

Patent metadata

Field	Value
Publication number	US-10626353-B2
Application number	US-201815890398-A
Country	US
Kind code	B2
Filing date	Feb 7, 2018
Priority date	Feb 10, 2017
Publication date	Apr 21, 2020
Grant date	Apr 21, 2020

Abstract

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers; 3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and 4) water.

First claim

What is claimed is:

1. A cleaning composition, comprising:
1) hydroxylamine;
2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers;
3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and
4) water;
wherein the composition is free of a metal halide and an oxidizing agent.

2. The composition of claim 1 , wherein the composition has a pH from about 7 to about 11.

3. The composition of claim 1 , wherein the hydroxylamine is from about 0.5% to about 20% by weight of the composition.

4. The composition of claim 1 , wherein the composition comprises two organic solvents.

5. The composition of claim 4 , wherein the two organic solvents are each independently selected from the group consisting of alkylene glycols, alkylene glycol ethers, and sulfones.

6. A cleaning composition, comprising:
1) at least one redox agent;
2) two organic solvents;
3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and
4) water;
wherein the two organic solvents are each independently selected from the group consisting of hexylene glycol, diethylene glycol butyl ether, and sulfolane.

7. The composition of claim 1 , wherein the at least one organic solvent is from about 60% to about 95% by weight of the composition.

8. The composition of claim 1 , further comprising at least one organic acid.

9. The composition of claim 8 , wherein the at least one organic acid comprises a carboxylic acid or a sulfonic acid.

10. The composition of claim 9 , wherein the at least one organic acid comprises methanesulfonic acid.

11. The composition of claim 8 , wherein the at least one organic acid is from about 0.01% to about 0.5% by weight of the composition.

12. The composition of claim 1 , wherein the at least one boron-containing compound comprises boric acid.

13. A cleaning composition, comprising:
1) at least one redox agent;
2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers;
3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and
4) water;
wherein the at least one boron-containing compound comprises a boronic acid of formula (I):
R—B—(OH) 2 ,

in which R is C 1 -C 10 alky or aryl.

14. The composition of claim 13 , wherein R is phenyl.

15. The composition of claim 1 , wherein the boron-containing compound is from about 0.001% to about 0.2% by weight of the composition.

16. The composition of claim 1 , wherein the water is from about 5% to about 28% of the composition.

17. A method, comprising:
contacting a semiconductor substrate containing post etch residues or post ashing residues with a cleaning composition comprising:
1) at least one redox agent;
2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, water soluble sulfones, and water soluble ethers;
3) at least one boron-containing compound selected from the group consisting of boric acid, boronic acids, and salts thereof; and
4) water;
wherein the composition is free of a metal halide.

18. The method of claim 17 , wherein the semiconductor substrate further comprises a layer comprising a material selected from the group consisting of Cu, Co, W, AlOx, AlN, AlOxNy, Ti, TiN, Ta, TaN, TiOx, ZrOx, HfOx, and TaOx.

19. The method of claim 17 , further comprising rinsing the semiconductor substrate with a rinse solvent after the contacting step.

20. The method of claim 19 , further comprising drying the semiconductor substrate after the rinsing step.

21. The method of claim 17 , further comprising forming a semiconductor device from the semiconductor substrate.

22. The method of claim 17 , wherein the composition has a pH from about 7 to about 11.

23. The method of claim 17 , wherein the at least one redox agent comprises hydroxylamine.

24. The method of claim 17 , wherein the at least one redox agent is from about 0.5% to about 20% by weight of the composition.

25. The method of claim 17 , wherein the composition comprises two organic solvents.

26. The method of claim 25 , wherein the two organic solvents are each independently selected from the group consisting of alkylene glycols, alkylene glycol ethers, and sulfones.

27. The method of claim 26 , wherein the two organic solvents are each independently selected from from the group consisting of hexylene glycol, diethylene glycol butyl ether, and sulfolane.

28. The method of claim 17 , wherein the at least one organic solvent is from about 60% to about 95% by weight of the composition.

29. The method of claim 17 , wherein the composition further comprises at least one organic acid.

30. The method of claim 29 , wherein the at least one organic acid comprises a carboxylic acid or a sulfonic acid.

31. The method of claim 30 , wherein the at least one organic acid comprises methanesulfonic acid.

32. The method of claim 29 , wherein the at least one organic acid is from about 0.01% to about 0.5% by weight of the composition.

33. The method of claim 17 , wherein the at least one boron-containing compound comprises boric acid.

34. The method of claim 17 , wherein the at least one boron-containing compound comprises a boronic acid of formula (I):
R—B—(OH) 2 ,

in which R is C 1 -C 10 alky or aryl.

35. The method of claim 34 , wherein R is phenyl.

36. The method of claim 17 , wherein the boron-containing compound is from about 0.001% to about 0.2% by weight of the composition.

37. The method of claim 17 , wherein the water is from about 5% to about 28% of the composition.

Assignees

• Fujifilm Electronic Mat Usa Inc

Inventors

• Kneer Emil A
• Sugishima Yasuo

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/27

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H10P70/23

  during, before or after processing of insulating materials · CPC title

• C11D3/044

  Hydroxides or bases · CPC title

• C11D7/06

  Hydroxides · CPC title