Cleaning composition, cleaning process, and process for producing semiconductor device

Patent metadata

Field	Value
Publication number	US-9396926-B2
Application number	US-201414158454-A
Country	US
Kind code	B2
Filing date	Jan 17, 2014
Priority date	Mar 25, 2010
Publication date	Jul 19, 2016
Grant date	Jul 19, 2016

Abstract

A cleaning method is provided that includes a step of preparing a cleaning composition containing 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10, and a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition. There are also provided a process for producing a semiconductor device that includes a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method, and a cleaning composition for removing plasma etching residue formed above a semiconductor substrate that contains 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5 to 10.

First claim

What is claimed is:

1. A cleaning method comprising:
a step of preparing a cleaning composition comprising 57 to 95 wt % of (component a) water, 1 to 40 wt % of (component b) a secondary hydroxy group- and/or tertiary hydroxy group-containing hydroxy compound, (component c) an organic acid, and (component d) a quaternary ammonium compound, the composition having a pH of 5.2 to 10; and
a step of removing plasma etching residue formed above a semiconductor substrate by means of the cleaning composition.

2. The cleaning method according to claim 1 , wherein component b above is a diol compound.

3. The cleaning method according to claim 2 , wherein component b above is a compound comprising at least a secondary hydroxy group and a hydroxy group selected from the group consisting of a primary hydroxy group, a secondary hydroxy group and a tertiary hydroxy group.

4. The cleaning method according to claim 3 , wherein component b above is a compound selected from the group consisting of dipropylene glycol, 2-methyl-2,4-pentanediol, and 1,3-butanediol.

5. The cleaning method according to claim 1 , further comprising (component e) a hydroxylamine and/or a salt thereof.

6. The cleaning method according to claim 1 , wherein component c above is a carboxylic acid containing only C, H, and O as constituent elements.

7. The cleaning method according to claim 6 , wherein component c above is a compound selected from the group consisting of citric acid, lactic acid, glycolic acid, oxalic acid, acetic acid, propionic acid, valeric acid, isovaleric acid, succinic acid, malic acid, glutaric acid, maleic acid, fumaric acid, phthalic acid, 1,2,3-benzenetricarboxylic acid, salicylic acid, tartaric acid, gluconic acid, and malonic acid.

8. The cleaning method according to claim 1 , further comprising (component f) an amino group-containing carboxylic acid.

9. The cleaning method according to claim 8 , wherein component f above is histidine or arginine.

10. The cleaning method according to claim 1 , further comprising (component g) an inorganic acid and/or a salt thereof.

11. The cleaning method according to claim 10 , wherein component g above is a compound selected from the group consisting of phosphoric acid, boric acid, ammonium phosphate, and ammonium borate.

12. A process for producing a semiconductor device, comprising a step of cleaning plasma etching residue formed above a semiconductor substrate using the cleaning method according to claim 1 .

13. The process for producing a semiconductor device according to claim 12 , wherein the semiconductor substrate comprises aluminum or copper.

14. The cleaning method according to claim 5 , wherein component e is a salt of a hydroxylamine.

15. The cleaning method according to claim 5 , wherein component e is a compound selected from the group consisting of hydroxylammonium nitrate, hydroxylammonium sulfate, hydroxylammonium phosphate, hydroxylammonium hydrochloride and mixtures thereof.

16. The cleaning method according to claim 1 , wherein component d is a tetraalkylammonium hydroxide.

17. The cleaning method according to claim 1 , wherein component d is a compound selected from the group consisting of tetramethylammonium hydroxide, tetraethylammonium hydroxide, tetrabutylammonium hydroxide, trimethylhydroxyethylammonium hydroxide, methyltri(hydroxyethyl)ammonium hydroxide, tetra(hydroxyethyl)ammonium hydroxide, and benzyltrimethylammonium hydroxide.

18. The cleaning method according to claim 1 , wherein component b is dipropylene glycol.

19. The cleaning method according to claim 1 , wherein the composition has a pH of 6 to 10.

20. The cleaning method according to claim 1 , wherein the composition has a pH of 6 to 8.

Assignees

• Fujifilm Corp

Inventors

• Mizutani Atsushi
• Fushimi Hideo
• Takahashi Tomonori
• Takahashi Kazutaka

Classifications

• H10P70/273

  the processing being a delineation of conductive layers, e.g. by RIE · CPC title

• H10P70/234

  the processing being the formation of vias or contact holes · CPC title

• H10P70/30 Primary

  Cleaning after the substrates have been singulated · CPC title

• C11D7/3209

  Amines or imines with one to four nitrogen atoms; Quaternized amines · CPC title

• C11D7/265

  Carboxylic acids or salts thereof · CPC title