Aqueous silica slurry and amine carboxylic acid compositions selective for nitride removal in polishing and methods of using them

Patent metadata

Field	Value
Publication number	US-10584265-B2
Application number	US-201715719031-A
Country	US
Kind code	B2
Filing date	Sep 28, 2017
Priority date	Sep 28, 2017
Publication date	Mar 10, 2020
Grant date	Mar 10, 2020

Abstract

The present invention provides aqueous chemical mechanical planarization polishing (CMP polishing) compositions comprising one or more dispersions of aqueous colloidal silica particles, preferably, spherical colloidal silica particles, one or more amine carboxylic acids having an isolectric point (pI) below 5, preferably, an acidic amino acid or a pyridine acid, and one or more ethoxylated anionic surfactants having a C6 to C10 alkyl, aryl or alkylaryl hydrophobic group, wherein the compositions have a pH of from 3 to 5. The compositions enable good silicon nitride removal and selectivity of nitride to oxide removal in polishing.

First claim

We claim:

1. An aqueous chemical mechanical planarization polishing composition comprising an abrasive of one or more dispersions of aqueous spherical colloidal silica particles having a zeta potential of −5 to −20mV, 0.005 to 5 wt %, based on the total weight of the composition, of one or more pyridine acids having an isoelectric point from 2.0 to 4.0, and one or more ethoxylated sulfate anionic surfactants having a C 6 to C 10 alkyl, aryl or alkylaryl hydrophobic group, wherein the composition has a pH of 3 to 5, and, further wherein, the amount of the abrasive particles as solids, ranges from 0.01 to 30 wt. %, based on the total weight of the composition.

2. The aqueous chemical mechanical polishing composition as claimed in claim 1 , wherein the amount of the abrasive spherical colloidal silica particles having a zeta potential of −5 to −20mV as solids, ranges from 0.1 to less than 1 wt.%, based on the total weight of the composition.

3. The aqueous chemical mechanical polishing composition as claimed in claim 1 , wherein the pH of the composition ranges from 3.5 to 4.5.

4. The aqueous chemical mechanical polishing composition as claimed in claim 1 , wherein the amount of the ethoxylated sulfate anionic surfactant having a C 6 to C 10 alkyl, aryl or alkyl hydrophobic group ranges from 0.0001 to 1 wt. %, based on the total weight of the composition.

5. The aqueous chemical mechanical polishing composition as claimed in claim 1 , wherein the one or more pyridine acids are selected from the group consisting of nicotinic acid and picolinic acid.

Assignees

• Rohm & Haas Elect Materials Cmp Holdings Inc

Inventors

• Penta Naresh Kumar
• Guo Yi
• Mosley David
• Van Hanehem Matthew
• Tettey Kwadwo E

Classifications

• C09G1/02 Primary

  containing abrasives or grinding agents {(abrasives as such C09K3/14; polishing of semi-conductors H10P52/40)} · CPC title

• C09K3/1409

  Abrasive particles per se (preparation of diamond C01B32/25) · CPC title

• C09K3/1463

  Aqueous liquid suspensions · CPC title

• B24B37/044

  characterised by the composition of the lapping agent · CPC title

• C09G1/04

  Aqueous dispersions (C09G1/02 takes precedence) · CPC title