Tandem source activation for CVD of films

Patent metadata

Field	Value
Publication number	US-10577688-B2
Application number	US-201715667980-A
Country	US
Kind code	B2
Filing date	Aug 3, 2017
Priority date	Oct 22, 2013
Publication date	Mar 3, 2020
Grant date	Mar 3, 2020

Abstract

A method for processing a substrate in a substrate processing system includes flowing reactant gases into a process chamber including a substrate and supplying a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate. The first power level is supplied in a first predetermined period where the reactant gases are flowing into the process chamber and a second power level is not supplied to the process chamber. The method further includes waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber and, after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period.

First claim

What is claimed is:

1. A method for processing a substrate in a substrate processing system, comprising:
a) flowing reactant gases into a process chamber including a substrate;
b) supplying, to the process chamber, a first power level sufficient to promote rearrangement of molecules adsorbed from the reactant gases onto a surface of the substrate, wherein the first power level is supplied in a first predetermined period where (i) the reactant gases are flowing into the process chamber and (ii) a second power level is not supplied to the process chamber;
c) waiting a second predetermined period subsequent to flowing the reactant gases and supplying the first power level and prior to supplying the second power level to the process chamber;
d) after the second predetermined period, performing plasma-enhanced, pulsed chemical vapor deposition of film on the substrate by supplying one or more precursors while supplying the second power level to the process chamber for a third predetermined period, wherein performing the pulsed chemical vapor deposition includes providing a pulse train including a sequence of pulses supplying the one or more precursors while the second power level is continuously supplied, wherein the first power level is less than a predetermined threshold at which significant parasitic chemical vapor deposition occurs, and wherein the second power level is greater than the first power level and a second threshold, wherein the second threshold corresponds to a threshold energy of activation for decomposing the one or more precursors; and
e) removing reactants from the process chamber.

2. The method of claim 1 , wherein (b) is performed using at least one of an ultraviolet source, an inductively coupled plasma source, a capacitively coupled plasma source and a remote plasma source, and wherein (d) is performed using at least one of the inductively coupled plasma source, the capacitively coupled plasma source and the remote plasma source.

3. The method of claim 1 , wherein the first power level is supplied during (b) and (c) and not during (d).

4. The method of claim 1 , wherein the first power level is terminated after the second power level is supplied and wherein the first power level is supplied prior to the second power level being terminated.

5. The method of claim 2 , wherein the first power level is supplied by the capacitively coupled plasma source and the second power level is supplied by the capacitively coupled plasma source.

6. The method of claim 1 , wherein (c) to (e) are repeated to perform a cyclical deposition process.

7. The method of claim 2 , wherein the first power level is supplied by the inductively coupled plasma source and the second power level is supplied by the inductively coupled plasma source.

8. The method of claim 2 , wherein the first power level is supplied by the remote plasma source and the second power level is supplied by the capacitively coupled plasma source.

9. The method of claim 2 , wherein the first power level is supplied by the ultraviolet source.

10. The method of claim 2 , wherein the first power level is supplied by the inductively coupled plasma source and the second power level is supplied by the capacitively coupled plasma source.

11. The method of claim 1 , wherein the removal in (e) comprises at least one of purging and evacuating the process chamber.

12. The method of claim 1 , wherein the first power level promotes further cracking of surface molecules on a surface of the substrate.

13. The method of claim 1 , wherein the first power level permits low energy activation on a surface of the substrate.

Assignees

• Lam Res Corp

Inventors

• Lavoie Adrien
• Kang Hu
• Leeser Karl

Classifications

• C23C16/401

  containing silicon · CPC title

• C23C16/517

  using a combination of discharges covered by two or more of groups C23C16/503 - C23C16/515 · CPC title

• C23C16/4554 Primary

  Plasma being used non-continuously in between ALD reactions (C23C16/56 takes precedence) · CPC title

• C23C16/507

  using external electrodes, e.g. in tunnel type reactors · CPC title

• C23C16/509

  using internal electrodes · CPC title