Tritertbutyl aluminum reactants for vapor deposition

Patent metadata

Field	Value
Publication number	US-10556799-B2
Application number	US-201816049524-A
Country	US
Kind code	B2
Filing date	Jul 30, 2018
Priority date	Oct 2, 2015
Publication date	Feb 11, 2020
Grant date	Feb 11, 2020

Abstract

Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu)2(iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu)2. A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.

First claim

What is claimed is:

1. A deposition reactor comprising a first reactant container fluidly connected to a reaction chamber, the reactant container comprising a first precursor composition comprising at least 50% Isomer 1, at least 50% Isomer 2, or at least 20% of a combination of Isomer 1 and Isomer 2 of Al(tert-Bu) 3 , wherein Isomer 1 has the formula Al(tert-Bu) 2 (iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu) 2 .

2. The deposition reactor of claim 1 , wherein the composition comprises at least 70% Isomer 1.

3. The deposition reactor of claim 1 , wherein the composition comprises at least 70% Isomer 2.

4. The deposition reactor of claim 1 , wherein the composition comprises at least 50% of a combination of Isomer 1 and Isomer 2.

5. The deposition reactor of claim 1 , wherein the composition comprises at least 80% of a combination of Isomer 1 and Isomer 2.

6. The deposition reactor of claim 1 , wherein the composition does not comprise Isomer 3, wherein Isomer 3 has the formula Al(iso-Bu) 3 .

7. The deposition reactor of claim 1 , where in the composition comprises at most 5% Isomer 3, wherein Isomer 3 has the formula Al(iso-Bu) 3 .

8. The deposition reactor of claim 1 , wherein the composition additionally comprises Isomer 3 of Al(tert-Bu) 3 , wherein Isomer 3 has the formula Al(iso-Bu) 3 .

9. The deposition reactor of claim 1 , wherein the deposition reactor is configured to vaporize the first precursor composition and conduct the vapor to the reaction chamber.

10. The deposition reactor of claim 1 , comprising a second reactant container, the second container comprising a titanium halide precursor composition.

Assignees

• Asm Ip Holding Bv

Inventors

• Shero Eric J
• Verghese Mohith E

Classifications

• C23C16/32 Primary

  Carbides · CPC title

• C23C16/45525

  Atomic layer deposition [ALD] · CPC title

• C01B32/921 Primary

  Titanium carbide · CPC title

• C23C16/45553

  characterized by the use of precursors specially adapted for ALD · CPC title

• C23C16/45551

  for relative movement of the substrate and the gas injectors or half-reaction reactor compartments · CPC title