Titanium aluminum and tantalum aluminum thin films
US-10002936-B2 · Jun 19, 2018 · US
Tritertbutyl aluminum reactants for vapor deposition
US10118828B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-10118828-B2 |
| Application number | US-201615239389-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 17, 2016 |
| Priority date | Oct 2, 2015 |
| Publication date | Nov 6, 2018 |
| Grant date | Nov 6, 2018 |
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- Title
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- Abstract
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- Assignees and inventors
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- First independent claim
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- CPC / IPC classifications
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Abstract
Official abstract text for this publication.
Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor compositions comprise at least 50% of Isomer 1 of TTBA, at least 50% of Isomer 2 of TTBA, or at least 20% of a combination of Isomer 1 and Isomer 2, where Isomer 1 has the formula Al(tert-Bu) 2 (iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu) 2 . A container containing a precursor composition comprising at least 50% of Isomer 1 or Isomer 2 or at least 20% of a combination of Isomer 1 and 2 of TTBA can be attached to a vapor deposition reactor and used to deposit transition metal carbide thin films such as Al-doped titanium carbide thin films by atomic layer deposition or chemical vapor deposition.
First claim
Opening claim text (preview).
What is claimed is: 1. A vapor deposition precursor composition comprising at least 50% Isomer 1, at least 50% Isomer 2, or greater than 20% of a combination of Isomer 1 and Isomer 2 of Al(tert-Bu) 3 (TTBA), wherein Isomer 1 has the formula Al(tert-Bu) 2 (iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu) 2 . 2. The composition of claim 1 comprising at least 70% Isomer 1. 3. The composition of claim 1 comprising at least 80% Isomer 1. 4. The composition of claim 1 comprising at least 70% Isomer 2. 5. The composition of claim 1 comprising greater than 50% of a combination of Isomer 1 and Isomer 2. 6. The composition of claim 1 comprising greater than 80% of a combination of Isomer 1 and Isomer 2. 7. The composition of claim 1 comprising at least 80% Isomer 2. 8. The composition of claim 1 , wherein the composition further comprises Al(tert-Bu) 3 . 9. The composition of claim 1 , wherein the composition does not comprise Isomer 3 wherein Isomer 3 has the formula Al(iso-Bu) 3 . 10. The composition of claim 1 , additionally comprising Isomer 3 of Al(tert-Bu) 3 , wherein Isomer 3 has the formula Al(iso-Bu) 3 . 11. The composition of claim 10 , wherein the composition comprises at most 5% Isomer 3. 12. A container configured to be attached to a deposition reactor, the container comprising a composition comprising at least 50% Isomer 1, at least 50% Isomer 2 or at least 20% of a combination of Isomer 1 and Isomer 2 of Al(tert-Bu) 3 , wherein Isomer 1 has the formula Al(tert-Bu) 2 (iso-Bu) and Isomer 2 has the formula Al(tert-Bu)(iso-Bu) 2 . 13. The container of claim 12 , wherein the composition comprises at least 70% Isomer 1. 14. The container of claim 12 , wherein the composition comprises at least 90% Isomer 1. 15. The container of claim 12 , wherein the composition comprises at least 70% Isomer 2. 16. The container of claim 12 , wherein the composition comprises at least 90% Isomer 2. 17. The container of claim 12 , wherein the composition comprises at least 50% of a combination of Isomer 1 and Isomer 2. 18. The container of claim 12 , wherein the composition comprises at least 80% of a combination of Isomer 1 and Isomer 2. 19. The container of claim 12 , wherein the composition comprises only a combination of Isomer 1 and Isomer 2. 20. The container of claim 12 , wherein the composition additionally comprises Isomer 3 of Al(tert-Bu) 3 , wherein Isomer 3 has the formula Al(iso-Bu) 3 . 21. The container of claim 20 , wherein the composition comprises at most 5% Isomer 3.
Assignees
Inventors
Classifications
Atomic layer deposition [ALD] · CPC title
- C23C16/32Primary
Carbides · CPC title
- C01B32/921Primary
Titanium carbide · CPC title
- C01B31/305Primary
Chemistry & Metallurgy · mapped topic
characterized by the use of precursors specially adapted for ALD · CPC title
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Frequently asked questions
Answers are generated from the same data shown on this page.
- What does patent US10118828B2 cover?
- Aluminum (Al) hydrocarbon precursor compositions are provided that can be used for vapor deposition of transition metal carbide thin films, for example aluminum-doped transition metal carbide thin films such as Al-doped titanium carbide thin films. In some embodiments, the precursor compositions comprise one or more isomers of tritertbutyl aluminum (TTBA). In some embodiments the precursor comp…
- Who is the assignee on this patent?
- Asm Ip Holding Bv
- What technology area does this patent fall under?
- Primary CPC classification C23C16/32. Mapped technology areas include Chemistry & Metallurgy.
- When was this patent published?
- Publication date Tue Nov 06 2018 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 6 related publications on this page (citations in our corpus or others sharing the same primary CPC).