Memory devices, components thereof, and related methods and systems
US-2024234483-A9 · Jul 11, 2024 · US
Atomic layer deposition [ALD]
Atomic layer deposition [ALD] · Cooperative Patent Classification (CPC)
Chemical and metallurgical processes, compounds, and materials.
Related technology areas
Mapped technology topics for this CPC code.
| Metric | Value |
|---|---|
| CPC code | C23C16/45525 |
| Official title | {Atomic layer deposition [ALD]} |
| Display label | Atomic layer deposition [ALD] |
| Total patents | 3,089 |
Filing trend
Year-over-year patent counts classified under this CPC code.
Filing activity over the last five years is stable.
| Year | Patents |
|---|---|
| 2015 | 192 |
| 2016 | 213 |
| 2017 | 271 |
| 2018 | 272 |
| 2019 | 306 |
| 2020 | 364 |
| 2021 | 283 |
| 2022 | 307 |
| 2023 | 272 |
| 2024 | 289 |
| 2025 | 269 |
| 2026 | 51 |
Representative patents
Representative publications under this CPC code from precomputed stats, or recent filings when stats are unavailable.
Method for producing a three-dimensional structure and three-dimensional structure
US-9221217-B2 · Dec 29, 2015 · US
Cobalt-containing compounds, their synthesis, and use in cobalt-containing film deposition
US-2015368282-A1 · Dec 24, 2015 · US
Cyclical deposition of germanium
US-9218963-B2 · Dec 22, 2015 · US
Gradient write gap for perpendicular magnetic recording writer
US-9214166-B1 · Dec 15, 2015 · US
Defect control and stability of dc bias in rf plasma-based substrate processing systems using molecular reactive purge gas
US-2015354061-A1 · Dec 10, 2015 · US
Multi-station plasma reactor with rf balancing
US-2015348854-A1 · Dec 3, 2015 · US
In-situ corrosion resistant substrate support coating
US-2015345017-A1 · Dec 3, 2015 · US
Single ald cycle thickness control in multi-station substrate deposition systems
US-2015332912-A1 · Nov 19, 2015 · US
Systems and methods for forming semiconductor devices
US-9177791-B2 · Nov 3, 2015 · US
ALD process window combinatorial screening tool
US-9175389-B2 · Nov 3, 2015 · US
Hydrogen-free silicon-based deposited dielectric films for nano device fabrication
US-2015287593-A1 · Oct 8, 2015 · US
Method for Stabilizing Reaction Chamber Pressure
US-2015284848-A1 · Oct 8, 2015 · US
Method of depositing tungsten layer with improved adhesion and filling behavior
US-2015287606-A1 · Oct 8, 2015 · US
Method of manufacturing semiconductor device, substrate processing apparatus, and non-transitory computer-readable recording medium
US-2015279682-A1 · Oct 1, 2015 · US
Method for producing ultra-thin tungsten layers with improved step coverage
US-2015279732-A1 · Oct 1, 2015 · US
High-aspect-ratio imprinted structure method
US-2015279688-A1 · Oct 1, 2015 · US
Conditioned semiconductor system parts
US-2015275361-A1 · Oct 1, 2015 · US
METHOD AND APPARATUS FOR FORMING TiSiN FILM
US-2015279683-A1 · Oct 1, 2015 · US
Plasma atomic layer deposition
US-2015279681-A1 · Oct 1, 2015 · US
Frequently asked questions
Answers are generated from the same data shown on this page.
- What is CPC C23C16/45525?
- CPC C23C16/45525 is the Cooperative Patent Classification code for “Atomic layer deposition [ALD].”
- How many patents are filed under CPC C23C16/45525 (Atomic layer deposition [ALD])?
- Our database includes 3,089 publications tagged with this CPC code.
- Is patent activity under CPC C23C16/45525 growing?
- Publication counts under this code: 289 in 2024 vs 269 in 2025 (latest complete years).