Selective deposition of aluminum and nitrogen containing material

Patent metadata

Field	Value
Publication number	US-10121699-B2
Application number	US-201715432263-A
Country	US
Kind code	B2
Filing date	Feb 14, 2017
Priority date	Aug 5, 2015
Publication date	Nov 6, 2018
Grant date	Nov 6, 2018

Abstract

Methods are provided for selectively depositing Al and N containing material on a first conductive surface of a substrate relative to a second, dielectric surface of the same substrate. In some aspects, methods of forming an Al and N containing protective layer or etch stop layer for use in integrated circuit fabrication are provided.

First claim

What is claimed is:

1. A process for selectively forming AlN on a first surface of a substrate relative to a second different surface of the substrate, the process comprising one or more super-cycles comprising:
selectively depositing AlN on the first surface of the substrate relative to the second different surface of the substrate by one or more selective deposition sub-cycles;
etching the deposited AlN by one or more thermal etching sub-cycles;
wherein the super-cycle further comprises exposing the substrate to a pretreatment reactant prior to the selectively depositing AlN; and
wherein AlN is selectively formed on the first surface of the substrate relative to the second different surface of the substrate with a selectivity greater than about 99%.

2. The process of claim 1 , wherein in the one or more super-cycles the one or more selective deposition sub-cycles and the one or more thermal etching sub-cycles are repeated until an AlN thin film of a desired thickness has been formed on the first surface.

3. The process of claim 1 , wherein the pretreatment reactant comprises plasma.

4. The process of claim 3 , wherein the plasma is generated from a gas comprising H 2 .

5. The process of claim 1 , wherein the one or more selective deposition sub-cycles comprise:
contacting the substrate with a first vapor phase precursor comprising aluminum; and
contacting the substrate with a second vapor phase precursor comprising nitrogen.

6. The process of claim 5 , wherein the one or more selective deposition sub-cycles are repeated until AlN of a desired thickness is deposited on the first surface.

7. The process of claim 5 , wherein the one or more selective deposition sub-cycles are repeated until the one or more selective deposition sub-cycles are no longer selective.

8. The process of claim 5 , wherein the first vapor phase precursor comprising aluminum comprises one of tritertbutylaluminum (TTBA), trimethylaluminum (TMA) or triethylaluminum (TEA).

9. The process of claim 5 , wherein the second vapor phase precursor comprising nitrogen comprises NH 3 .

10. The process of claim 1 , wherein the one or more thermal etching sub-cycles comprise:
contacting the substrate with a first vapor phase halide etch reactant; and
contacting the substrate with a second vapor phase etch reactant comprising aluminum.

11. The process of claim 10 , wherein the first vapor phase halide etch reactant comprises NF 3 or NbF 5 .

12. The process of claim 10 , wherein the second vapor phase etch reactant comprising aluminum comprises trimethylaluminum (TMA) or triethylaluminum (TEA).

13. The process of claim 10 , wherein the one or more etching sub-cycles are carried out at a process temperature of about 300° C.

14. The process of claim 1 , wherein the first surface comprises W and the second surface comprises SiO 2 .

15. The process of claim 1 , wherein the first surface comprises TiN and the second surface comprises SiO 2 .

16. The process of claim 1 , wherein the one or more selective deposition sub-cycles are repeated from 1 to about 300 times; and
wherein the one or more thermal etching sub-cycles comprise an atomic layer etching (ALE) process and are repeated from 1 to about 150 times.

17. A process for selectively forming AlN on a first surface of a substrate relative to a second different surface of the same substrate, the process comprising a super-cycle comprising:
a selective deposition sub-cycle comprising:
alternately and sequentially contacting the substrate with a first vapor phase precursor comprising aluminum and a second vapor phase precursor comprising nitrogen such that the AlN is deposited on the first surface of the substrate relative to the second different surface of the same substrate with a selectivity greater than about 5%; and

an atomic layer etch sub-cycle comprising:
alternately and sequentially contacting the substrate with a first vapor phase halide etch reactant and a second vapor phase etch reactant comprising aluminum.

18. The process of claim 17 , wherein the super-cycle is repeated one or more times.

19. The process of claim 17 , the super-cycle further comprising exposing the substrate to a plasma generated from a gas comprising H 2 prior to the selective deposition sub-cycle.

20. The process of claim 17 , wherein the first vapor phase precursor comprising aluminum comprises trimethylaluminum (TMA), the second vapor phase precursor comprising nitrogen comprises NH 3 , the first vapor phase halide etch reactant comprises NF 3 , and the second vapor phase etch reactant comprising aluminum comprises TMA.

21. The process of claim 17 , wherein the first surface is a conductive surface and the second surface is a dielectric surface.

Assignees

• Asm Ip Holding Bv

Inventors

• Wang Han
• Xie Qi
• Longrie Delphine
• Maes Jan Willem
• De Roest David
• Hsieh Julian
• Zhu chiyu
• Asikainen Timo
• Kachel Krzysztof
• Profijt Harald

Classifications

• H10P50/285

  of materials not containing Si, e.g. PZT or Al2O3 · CPC title

• H10P50/73

  using masks for insulating materials · CPC title

• H10P14/69391 Primary

  the material containing aluminium, e.g. Al2O3 · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6514

  by exposure to a plasma · CPC title