Method for forming silicon nitride film selectively on sidewalls or flat surfaces of trenches

Patent metadata

Field	Value
Publication number	US-10529554-B2
Application number	US-201715592730-A
Country	US
Kind code	B2
Filing date	May 11, 2017
Priority date	Feb 19, 2016
Publication date	Jan 7, 2020
Grant date	Jan 7, 2020

Abstract

A method for fabricating a layer structure in a trench includes: simultaneously forming a dielectric film containing a Si—N bond on an upper surface, and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the film formed on the upper surface and the bottom surface and a sidewall portion of the film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage between two electrodes between which the substrate is place in parallel to the two electrodes; and substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the film by wet etching which removes the one of the top/bottom portion and the sidewall portion of the film more predominantly than the other according to the different chemical resistance properties.

First claim

We claim:

1. A method for fabricating a layer structure constituted by a dielectric film containing a Si—N bond in a trench formed in an upper surface of a substrate, comprising:
(i) simultaneously forming a dielectric film containing a Si—N bond on the upper surface and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage in a reaction space between two electrodes between which the substrate is placed in parallel to the two electrodes;
(ii) substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties; and
(iii) obtaining a reference plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent,
wherein the plasma in step (i) is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes, wherein plasma density is higher than the reference plasma density,
wherein the etching in step (ii) removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film, wherein obtaining the reference plasma density comprises performing the forming of dielectric films as recited in step (i), then determining the chemical resistance property by etching as recited in step (ii), then repeating these steps for a plurality of times using different plasma density values, then obtaining the reference plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent, and wherein the dielectric film is a SiN film.

2. The method according to claim 1 , wherein in step (i), the dielectric film is formed by plasma-enhanced atomic layer deposition (PEALD).

3. The method according to claim 1 , wherein the plasma is a plasma of Ar, N 2 , or O 2 .

4. The method according to claim 1 , wherein in step (i), a halogenated silane is used as a precursor.

5. The method according to claim 1 , wherein the etching is the wet etching, which is conducted using a solution of hydrogen fluoride (HF) or phosphoric acid.

6. A method for fabricating a layer structure constituted by a dielectric film containing a Si—N bond in a trench formed in an upper surface of a substrate, comprising:
(i) simultaneously forming a dielectric film containing a Si—N bond on the upper surface and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage in a reaction space between two electrodes between which the substrate is placed in parallel to the two electrodes;
(ii) substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties; and
(iii) obtaining a reference plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent,
wherein the plasma in step (i) is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes, wherein plasma density is higher than the reference plasma density,
wherein the etching in step (ii) removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film, wherein obtaining the reference plasma density comprises performing the forming of dielectric films as recited in step (i), then determining the chemical resistance property by etching as recited in step (ii), then repeating these steps for a plurality of times using different plasma density values, then obtaining the reference plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent, wherein the plasma density is modulated by tuning the pressure in the reaction space, wherein the plasma density increases by lowering the pressure.

7. The method according to claim 6 , further comprising, prior to steps (i) and (ii), repeating the following steps to determine the reference plasma density:
simultaneously forming a dielectric film under the same conditions as in step (i) except that the pressure is changed as a variable; and
substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by etching under the same conditions as in step (ii).

8. The method according to claim 6 , wherein the pressure in step (i) is controlled below 300 Pa.

9. A method for fabricating a layer structure constituted by a dielectric film containing a Si—N bond in a trench formed in an upper surface of a substrate, comprising:
(i) simultaneously forming a dielectric film containing a Si—N bond on the upper surface and a bottom surface and sidewalls of the trench, wherein a top/bottom portion of the dielectric film formed on the upper surface and the bottom surface and a sidewall portion of the dielectric film formed on the sidewalls are given different chemical resistance properties by bombardment of a plasma excited by applying voltage in a reaction space between two electrodes between which the substrate is placed in parallel to the two electrodes;
(ii) substantially removing either one of but not both of the top/bottom portion and the sidewall portion of the dielectric film by etching which removes the one of the top/bottom portion and the sidewall portion of the dielectric film more predominantly than the other according to the different chemical resistance properties; and
(iii) obtaining a reference plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent,
wherein the plasma in step (i) is a capacitively coupled plasma (CCP) which is excited by applying RF power to one of the two electrodes, wherein plasma density is higher than the reference plasma density,
wherein the etching in step (ii) removes the top/bottom portion of the dielectric film selectively relative to the sidewall portion of the dielectric film, wherein obtaining the reference plasma density comprises performing the forming of dielectric films as recited in step (i), then determining the chemical resistance property by etching as recited in step (ii), then repeating these steps for a plurality of times using different plasma density values, then obtaining the reference ion plasma density at which the chemical resistance properties of the top/bottom portion of the dielectric film and the sidewall portion of the dielectric film are substantially equivalent, wherein the plasma density is modulated by tuning a ratio of high frequency RF power to low frequency RF power constituting th

Assignees

• Asm Ip Holding Bv

Inventors

• Ishikawa Dai
• Fukazawa Atsuki
• Shiba Eiichiro
• Ueda Shinya
• Ebisudani Taishi
• Chun SeungJu
• Yoo YongMin
• Min Yoonki
• Kim Seyong
• Choi Jongwan

Classifications

• H10P50/283

  by chemical means · CPC title

• H10P14/6682

  the compound being a silane, e.g. disilane, methylsilane or chlorosilane · CPC title

• H10P14/6532

  by exposure to a plasma · CPC title

• H10P14/6339

  deposition by cyclic CVD, e.g. ALD, ALE or pulsed CVD · CPC title

• H10P14/6336

  in the presence of a plasma [PECVD] · CPC title