Surface Treatment Compositions and Methods
US-2024258111-A1 · Aug 1, 2024 · US
Methods of selectively forming a material using parylene coating
US8945305B2 · US · B2
| Field | Value |
|---|---|
| Publication number | US-8945305-B2 |
| Application number | US-87260810-A |
| Country | US |
| Kind code | B2 |
| Filing date | Aug 31, 2010 |
| Priority date | Aug 31, 2010 |
| Publication date | Feb 3, 2015 |
| Grant date | Feb 3, 2015 |
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Abstract
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Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a surface of a substrate. The surface treatment may reactivate a surface of the substrate toward the blocking material, may restore the blocking material after degradation occurs during the ALD process, and/or may coat the blocking material to prevent further degradation during the ALD process. For example, the surface treatment may be applied after performing one or more ALD cycles. Accordingly, the presently disclosed methods enable in situ restoration of blocking materials in ALD process that are generally incompatible with the blocking material and also enables selective deposition in recessed structures.
First claim
Opening claim text (preview).
What is claimed is: 1. A method of selectively forming a material, the method comprising: forming a plurality of recesses in a first material overlying a substrate to expose underlying surfaces of the substrate; forming a blocking material over exposed surfaces of the first material; forming a second material over the exposed surfaces of the substrate by atomic layer deposition without forming the second material over the blockinc material; and restoring the blocking materia…
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Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
Electricity · mapped topic
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Frequently asked questions
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- What does patent US8945305B2 cover?
- Methods for depositing a material, such as a metal or a transition metal oxide, using an ALD (atomic layer deposition) process and resulting structures are disclosed. Such methods include treating a surface of a semiconductor structure periodically throughout the ALD process to regenerate a blocking material or to coat a blocking material that enables selective deposition of the material on a s…
- Who is the assignee on this patent?
- Marsh Eugene P, Micron Technology Inc
- What technology area does this patent fall under?
- Primary CPC classification H10P14/683. Mapped technology areas include Electricity.
- When was this patent published?
- Publication date Tue Feb 03 2015 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
- What related patents are in patentsdb?
- We list 8 related publications on this page (citations in our corpus or others sharing the same primary CPC).