Liquid crystal display device comprising a semiconductor film having a channel formation region overlapping with a conductive film in a floating state

Patent metadata

Field	Value
Publication number	US-10509271-B2
Application number	US-201916520560-A
Country	US
Kind code	B2
Filing date	Jul 24, 2019
Priority date	May 16, 2006
Publication date	Dec 17, 2019
Grant date	Dec 17, 2019

Abstract

By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.

First claim

What is claimed is:

1. A liquid crystal display device comprising:
a first substrate;
a conductive film over the first substrate;
a first insulating film over the conductive film;
a semiconductor film comprising a channel formation region over the first insulating film;
a gate insulating film over the semiconductor film;
a gate electrode over the semiconductor film with the gate insulating film therebetween;
a source wiring electrically connected to the semiconductor film,
a common electrode over the first substrate;
a wiring over and electrically connected to the common electrode;
a second insulating film over the common electrode;
a pixel electrode over the second insulating film;
a liquid crystal over the pixel electrode; and
a second substrate over the liquid crystal,
wherein the conductive film is in a floating state,
wherein the channel formation region overlaps with the conductive film,
wherein the source wiring overlaps with the conductive film,
wherein the common electrode has light-transmitting property,
wherein the pixel electrode and the common electrode overlaps with each other at least partly, and
wherein the common electrode is shared by a plurality of pixels aligned in a source wiring direction.

2. The liquid crystal display device according to claim 1 ,
wherein the first insulating film comprises silicon nitride,
wherein the second insulating film comprises silicon nitride, and
wherein the gate insulating film comprises silicon oxide.

3. The liquid crystal display device according to claim 1 ,
wherein the gate electrode is a part of a gate wiring, and
wherein the wiring is parallel to the gate wiring.

4. The liquid crystal display device according to claim 1 ,
wherein the wiring has a stacked structure in which an aluminum film is sandwiched between molybdenum films.

5. The liquid crystal display device according to claim 1 ,
wherein the pixel electrode comprises a slit.

6. A liquid crystal display device comprising:
a first substrate;
a conductive film over the first substrate;
a first insulating film over the conductive film;
a semiconductor film comprising a channel formation region over the first insulating film;
a gate insulating film over the semiconductor film;
a gate electrode over the semiconductor film with the gate insulating film therebetween;
a source wiring electrically connected to the semiconductor film,
an electrode in contact with a region of the semiconductor film through a first opening in the gate insulating film,
a common electrode over the first substrate;
a wiring over and electrically connected to the common electrode;
a second insulating film over the common electrode;
a pixel electrode in contact with a region of the electrode through an opening in the second insulating film;
a liquid crystal over the pixel electrode; and
a second substrate over the liquid crystal,
wherein the region of the electrode does not overlap with the region of the semiconductor film,
wherein the conductive film is in a floating state,
wherein the channel formation region overlaps with the conductive film,
wherein the source wiring overlaps with the conductive film,
wherein the common electrode has light-transmitting property,
wherein the pixel electrode and the common electrode overlaps with each other at least partly, and
wherein the common electrode is shared by a plurality of pixels aligned in a source wiring direction.

7. The liquid crystal display device according to claim 6 ,
wherein the first insulating film comprises silicon nitride,
wherein the second insulating film comprises silicon nitride, and
wherein the gate insulating film comprises silicon oxide.

8. The liquid crystal display device according to claim 6 ,
wherein the gate electrode is a part of a gate wiring, and
wherein the wiring is parallel to the gate wiring.

9. The liquid crystal display device according to claim 6 ,
wherein the wiring has a stacked structure in which an aluminum film is sandwiched between molybdenum films.

10. The liquid crystal display device according to claim 6 ,
wherein the pixel electrode comprises a slit.

11. A liquid crystal display device comprising:
a first substrate;
a conductive film over the first substrate;
a first insulating film over the conductive film;
a semiconductor film comprising a channel formation region over the first insulating film;
a gate insulating film over the semiconductor film;
a gate electrode over the semiconductor film with the gate insulating film therebetween;
a source wiring in contact with the semiconductor film through an opening in the gate insulating film,
a common electrode over the first substrate;
a wiring over and electrically connected to the common electrode;
a second insulating film over the common electrode;
a pixel electrode over the second insulating film;
a liquid crystal over the pixel electrode; and
a second substrate over the liquid crystal,
wherein the conductive film is in a floating state,
wherein the opening in the gate insulating film overlaps with the conductive film,
wherein the common electrode has light-transmitting property,
wherein the pixel electrode and the common electrode overlaps with each other at least partly, and
wherein the common electrode is shared by a plurality of pixels aligned in a source wiring direction.

12. The liquid crystal display device according to claim 11 ,
wherein the first insulating film comprises silicon nitride,
wherein the second insulating film comprises silicon nitride, and
wherein the gate insulating film comprises silicon oxide.

13. The liquid crystal display device according to claim 11 ,
wherein the gate electrode is a part of a gate wiring, and
wherein the wiring is parallel to the gate wiring.

14. The liquid crystal display device according to claim 11 ,
wherein the wiring has a stacked structure in which an aluminum film is sandwiched between molybdenum films.

15. The liquid crystal display device according to claim 11 ,
wherein the source wiring has a stacked structure in which an aluminum film is sandwiched between titanium films.

16. The liquid crystal display device according to claim 11 ,
wherein the pixel electrode comprises a slit.

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime

Classifications

• G02F1/133707

  Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes · CPC title

• G02F1/134363 Primary

  for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS] · CPC title

• G02F1/136286

  Wiring, e.g. gate line, drain line · CPC title

• G02F1/133345

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title

• G02F2201/121

  common or background · CPC title