Liquid crystal display device and semiconductor device

Patent metadata

Field	Value
Publication number	US-9268188-B2
Application number	US-201414492136-A
Country	US
Kind code	B2
Filing date	Sep 22, 2014
Priority date	May 16, 2006
Publication date	Feb 23, 2016
Grant date	Feb 23, 2016

Abstract

By increasing an interval between electrodes which drives liquid crystals, a gradient of an electric field applied between the electrodes can be controlled and an optimal electric field can be applied between the electrodes. The invention includes a first electrode formed over a substrate, an insulating film formed over the substrate and the first electrode, a thin film transistor including a semiconductor film in which a source, a channel region, and a drain are formed over the insulating film, a second electrode located over the semiconductor film and the first electrode and including first opening patterns, and liquid crystals provided over the second electrode.

First claim

What is claimed is:

1. A display device comprising:
a first substrate;
a first conductive film on and in contact with the first substrate;
a first insulating film on and in contact with the first conductive film;
a semiconductor film comprising a channel region on and in contact with the first insulating film;
a gate insulating film over the semiconductor film;
a gate over the gate insulating film;
a second insulating film over the gate;
a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film;
a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film;
a third insulating film over the source wiring and the second conductive film;
a pixel electrode over the third insulating film and in contact with the second conductive film through a third contact hole in the third insulating film;
a common electrode below the pixel electrode with the third insulating film interposed therebetween;
an alignment film over the pixel electrode and the common electrode;
a liquid crystal over the alignment film; and
a second substrate over the liquid crystal,
wherein the first conductive film is in a floating state,
wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween,
wherein the first insulating film is a silicon oxide film,
wherein the semiconductor film is a polysilicon film,
wherein the gate and the common electrode are overlapped with each other,
wherein the source wiring and the first conductive film are overlapped with each other,
wherein the first conductive film and the second conductive film are overlapped with each other,
wherein the third contact hole does not overlap the common electrode,
wherein the pixel electrode has comb-shaped portions, and
wherein a space is located between the comb-shaped portions of the pixel electrode.

2. The display device according to claim 1 , wherein the first contact hole and the second contact hole overlap the first conductive film.

3. The display device according to claim 1 , wherein the third contact hole does not overlap the first conductive film.

4. The display device according to claim 1 , wherein the first conductive film has a light-transmitting property.

5. The display device according to claim 1 ,
wherein the common electrode is on and in contact with the first substrate, and
wherein the first insulating film is on and in contact with the common electrode.

6. The display device according to claim 1 , comprising an auxiliary wiring electrically connected to the common electrode.

7. The display device according to claim 1 , wherein the second insulating film and the third insulating film are in contact with each other.

8. The display device according to claim 1 , wherein the source wiring and the second conductive film are each in contact with an upper surface of the semiconductor film.

9. A display device comprising:
a first substrate;
a first conductive film on and in contact with the first substrate;
a first insulating film on and in contact with the first conductive film;
a semiconductor film comprising a channel region on and in contact with the first insulating film;
a gate insulating film over the semiconductor film;
a gate over the gate insulating film;
a second insulating film over the gate;
a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film;
a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film;
a third insulating film over the source wiring and the second conductive film;
a pixel electrode over the third insulating film and in contact with the second conductive film through a third contact hole in the third insulating film;
a common electrode below the pixel electrode with the third insulating film interposed therebetween;
an alignment film over the pixel electrode and the common electrode;
a liquid crystal over the alignment film; and
a second substrate over the liquid crystal,
wherein the first conductive film is in a floating state,
wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween,
wherein the first insulating film is a silicon oxide film,
wherein the semiconductor film is a polysilicon film,
wherein the gate and the common electrode are overlapped with each other,
wherein the source wiring and the first conductive film are overlapped with each other,
wherein the first conductive film and the second conductive film are overlapped with each other,
wherein the third contact hole does not overlap the common electrode, and
wherein the pixel electrode comprises an opening.

10. The display device according to claim 9 , wherein the first contact hole and the second contact hole overlap the first conductive film.

11. The display device according to claim 9 , wherein the third contact hole does not overlap the first conductive film.

12. The display device according to claim 9 , wherein the first conductive film has a light-transmitting property.

13. The display device according to claim 9 ,
wherein the common electrode is on and in contact with the first substrate, and
wherein the first insulating film is on and in contact with the common electrode.

14. The display device according to claim 9 , comprising an auxiliary wiring electrically connected to the common electrode.

15. The display device according to claim 9 , wherein the second insulating film and the third insulating film are in contact with each other.

16. The display device according to claim 9 , wherein the source wiring and the second conductive film are each in contact with an upper surface of the semiconductor film.

17. A display device comprising:
a first substrate;
a first conductive film over the first substrate;
a first insulating film over the first conductive film;
a semiconductor film comprising a channel region over the first insulating film;
a gate insulating film over the semiconductor film;
a gate over the gate insulating film;
a second insulating film over the gate;
a source wiring over the second insulating film and in contact with the semiconductor film through a first contact hole in the gate insulating film and the second insulating film;
a second conductive film over the second insulating film and in contact with the semiconductor film through a second contact hole in the gate insulating film and the second insulating film;
a third insulating film over the source wiring and the second conductive film;
a pixel electrode over the third insulating film and electrically connected to the second conductive film through a third contact hole in the third insulating film;
a common electrode below the pixel electrode with the third insulating film interposed therebetween;
an alignment film over the pixel electrode and the common electrode;
a liquid crystal over the alignment film; and
a second substrate over the liquid crystal,
wherein the first conductive film is in a floating state,
wherein the first conductive film and the gate are overlapped with each other with the channel region interposed therebetween

Assignees

• Semiconductor Energy Lab

Inventors

• Kimura Hajime

Classifications

• G02F1/133707

  Structures for producing distorted electric fields, e.g. bumps, protrusions, recesses, slits in pixel electrodes · CPC title

• G02F2201/121

  common or background · CPC title

• G02F1/133345

  Insulating layers (G02F1/1335, G02F1/1337, G02F1/135, G02F1/136 take precedence) · CPC title

• G02F1/134363 Primary

  for applying an electric field parallel to the substrate, i.e. in-plane switching [IPS] · CPC title

• G02F1/136286 Primary

  Wiring, e.g. gate line, drain line · CPC title