Method for cleaning, passivation and functionalization of Si—Ge semiconductor surfaces

Patent metadata

Field	Value
Publication number	US-10483097-B2
Application number	US-201715696812-A
Country	US
Kind code	B2
Filing date	Sep 6, 2017
Priority date	Oct 24, 2012
Publication date	Nov 19, 2019
Grant date	Nov 19, 2019

Abstract

A method for in-situ dry cleaning of a SiGe semiconductor surface, ex-situ degreases the Ge containing semiconductor surface and removes organic contaminants. The surface is then dosed with HF (aq) or NH 4 F (g) generated via NH 3 +NH or NF 3 with H 2 or H 2 O to remove oxygen containing contaminants. In-situ dosing of the SiGe surface with atomic H removes carbon containing contaminants.

First claim

The invention claimed is:

1. A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with HF (aq), or with NH 4 F (g) generated via NH 3 +NF 3 or via NF 3 with H 2 or H 2 O;
in-situ dosing the SiGe surface with atomic H to remove carbon contamination;
in-situ passivating with H 2 O 2 (g); and
in-situ nucleating with trimethylaluminum (TMA).

2. The method of claim 1 , further comprising annealing at ˜200-300° C. after said nucleating.

3. A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface,
ex-situ, removing organic contaminants,
dosing the SiGe surface with HF through in-situ formation via NF 3 +atomic H; and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.

4. The method of claim 3 , further comprising in-situ passivating with H 2 O 2 (g).

5. A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with NH 4 F through in-situ thermally or plamsa mixing NH 3 +NF 3 ; and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.

6. A method for in-situ dry cleaning of a SiGe semiconductor surface, comprising:
ex-situ, degreasing the Ge containing semiconductor surface;
ex-situ, removing organic contaminants;
dosing the SiGe surface with NH 4 F through in-situ plasma mixing of NF 3 with H 2 or H 2 O, and
in-situ dosing the SiGe surface with atomic H to remove carbon contamination.

Assignees

• Univ California

Inventors

• Kaufman-Osborn Tobin
• Kummel Andrew C
• Kiantaj Kiarash

Classifications

• H10P70/18 Primary

  by combined dry cleaning and wet cleaning (H10P70/52 takes precedence) · CPC title

• H10P70/12

  by dry cleaning only (H10P70/52 takes precedence) · CPC title

• H10P50/00

  Etching of wafers, substrates or parts of devices · CPC title

• H10P14/6512

  by exposure to a gas or vapour · CPC title

• H10P14/6504

  In-situ cleaning · CPC title