Substrate processing method and substrate processing apparatus

Patent metadata

Field	Value
Publication number	US-9595433-B2
Application number	US-201213713606-A
Country	US
Kind code	B2
Filing date	Dec 13, 2012
Priority date	Mar 29, 2012
Publication date	Mar 14, 2017
Grant date	Mar 14, 2017

Abstract

A substrate processing method includes a rinsing step of supplying water of a first temperature to a surface of a silicon substrate to apply a rinsing process using the water to the silicon substrate surface, a second temperature water supplying (coating) step of supplying water of a second temperature lower than the first temperature to the silicon substrate surface after the rinsing step, and a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off the water on the silicon substrate surface to a periphery of the silicon substrate and thereby dry the silicon substrate.

First claim

What is claimed is:

1. A substrate processing method comprising:
a hydrofluoric acid supplying step of supplying a hydrofluoric acid to a surface of a silicon substrate to apply a hydrophobizing process using the hydrofluoric acid to the silicon substrate surface;
a rinsing step, executed after the hydrofluoric acid supplying step, of supplying water at room temperature to the silicon substrate surface to apply a rinsing process using the water to the silicon substrate surface;
a second temperature water supplying step of supplying water at a second temperature lower than room temperature and in a range of 5° C. to 10° C., wherein the water at the second temperature is supplied to the silicon substrate surface in the second temperature water supplying step;
a substrate rotating step of rotating the silicon substrate that is executed in parallel to the rinsing step and the second temperature water supplying step; and
a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off water on the silicon substrate surface to a periphery of the silicon substrate and thereby to dry the silicon substrate.

2. The substrate processing method according to claim 1 , further comprising: a step of making a facing member, having a facing surface facing the silicon substrate surface, to rotate in a same direction as the silicon substrate, and, at the same time, supplying a gas between the facing surface and the silicon substrate surface in parallel to the drying step.

3. The substrate processing method according to claim 1 , wherein said room temperature is approximately 25° C.

4. A substrate processing method comprising:
a hydrofluoric acid supplying step of supplying a hydrofluoric acid to a surface of a silicon substrate to apply a hydrophobizing process using the hydrofluoric acid to the silicon substrate surface;
a rinsing step, executed after the hydrofluoric acid supplying step, of supplying water at room temperature to the silicon substrate surface to apply a rinsing process using the water to the silicon substrate surface;
a second temperature water supplying step of supplying water at a second temperature lower than the room temperature and in a range of 5° C. to 10° C., wherein the water at the second temperature is supplied to the silicon substrate surface in the second temperature water supplying step;
a drying step of rotating the silicon substrate after the second temperature water supplying step to spin off water on the silicon substrate surface to a periphery of the silicon substrate and thereby to dry the silicon substrate; and
a step of making a facing member, having a facing surface facing the silicon substrate surface, to rotate in a same direction as the silicon substrate, and, at the same time, supplying a gas between the facing surface and the silicon substrate surface in parallel to the drying step.

5. The substrate processing method according to claim 4 , wherein said room temperature is approximately 25° C.

Assignees

• Dainippon Screen Mfg
• Screen Holdings Co Ltd

Inventors

• Takahashi Hiroaki

Classifications

• H10P72/0411

  for wet cleaning or washing · CPC title

• H10P72/0414 Primary

  using mainly spraying means, e.g. nozzles · CPC title

• H10P70/18 Primary

  by combined dry cleaning and wet cleaning (H10P70/52 takes precedence) · CPC title

• H10P50/00 Primary

  Etching of wafers, substrates or parts of devices · CPC title

• H01L21/67051

  Electricity · mapped topic