Method for cleaning and drying semiconductor substrate

Patent metadata

Field	Value
Publication number	US-9524863-B2
Application number	US-201414572867-A
Country	US
Kind code	B2
Filing date	Dec 17, 2014
Priority date	Feb 6, 2014
Publication date	Dec 20, 2016
Grant date	Dec 20, 2016

Abstract

The present invention provides a method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of (1) cleaning the semiconductor substrate onto which a pattern has been formed with a cleaning solution, (2) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and (3) decomposing and removing the resin (A) by either or both of an acid and heat. There can be provided a method for cleaning and drying a semiconductor substrate in which pattern falling or collapse occurring at the time of drying the cleaning solution after cleaning the substrate can be suppressed, and the cleaning solution can be efficiently removed, without using a specific apparatus which handles a supercritical state cleaning solution.

First claim

What is claimed is:

1. A method for cleaning and drying a semiconductor substrate in which a semiconductor substrate onto which a pattern has been formed is cleaned and dried, which comprises steps of
(1) cleaning with a cleaning solution the semiconductor substrate onto which a pattern has been formed,
(2) drying the cleaned semiconductor substrate, wherein this step (2) includes stages (2-1) and (2-2):
(2-1) substituting the cleaning solution with a composition solution containing a resin (A) which is decomposed by either or both of an acid and heat, and
(2-2) decomposing and removing the resin (A) by either or both of an acid and heat.

2. The method for cleaning and drying a semiconductor substrate according to claim 1 , wherein the resin (A) contains a repeating unit having an acetal structure represented by the following general formula (1),

wherein R 1 represents a hydrogen atom, or a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms which may be optionally substituted; and W represents a saturated or unsaturated divalent organic group having 2 to 30 carbon atoms.

3. The method for cleaning and drying a semiconductor substrate according to claim 2 , wherein the resin (A) is a compound represented by any of the following general formulae (1a) to (1c),

wherein R 1a represents an alkyl group having 1 to 4 carbon atoms; W a represents a saturated or unsaturated divalent hydrocarbon group having 4 to 10 carbon atoms which may contain an ether bond(s); each R b1 independently represents —W a —OH, or a saturated or unsaturated monovalent organic group having 1 to 30 carbon atoms which may be optionally substituted; R 1c represents a hydrogen atom, an aryl group having 6 to 20 carbon atoms which may be optionally substituted, or a heteroaryl group having 4 to 20 carbon atoms which may be optionally substituted; each R c1 independently represents an alkyl group having 1 to 4 carbon atoms or —W a —OH; and “n” represents an average number of repeating units and is 3 to 2,000.

4. The method for cleaning and drying a semiconductor substrate according to claim 1 , wherein an aspect ratio of the pattern is 10:1 or more.

5. The method for cleaning and drying a semiconductor substrate according to claim 2 , wherein an aspect ratio of the pattern is 10:1 or more.

6. The method for cleaning and drying a semiconductor substrate according to claim 3 , wherein an aspect ratio of the pattern is 10:1 or more.

7. The method for cleaning and drying a semiconductor substrate according to claim 1 , wherein the cleaning solution is a liquid containing one or more of water, a water-soluble alcohol, and a fluorine compound.

8. The method for cleaning and drying a semiconductor substrate according to claim 2 , wherein the cleaning solution is a liquid containing one or more of water, a water-soluble alcohol, and a fluorine compound.

9. The method for cleaning and drying a semiconductor substrate according to claim 3 , wherein the cleaning solution is a liquid containing one or more of water, a water-soluble alcohol, and a fluorine compound.

10. The method for cleaning and drying a semiconductor substrate according to claim 4 , wherein the cleaning solution is a liquid containing one or more of water, a water-soluble alcohol, and a fluorine compound.

11. The method for cleaning and drying a semiconductor substrate according to claim 1 , wherein decomposition and removal of the resin (A) is carried out by heating at 50° C. or higher and 300° C. or lower.

12. The method for cleaning and drying a semiconductor substrate according to claim 2 , wherein decomposition and removal of the resin (A) is carried out by heating at 50° C. or higher and 300° C. or lower.

13. The method for cleaning and drying a semiconductor substrate according to claim 3 , wherein decomposition and removal of the resin (A) is carried out by heating at 50° C. or higher and 300° C. or lower.

14. The method for cleaning and drying a semiconductor substrate according to claim 4 , wherein decomposition and removal of the resin (A) is carried out by heating at 50° C. or higher and 300° C. or lower.

15. The method for cleaning and drying a semiconductor substrate according to claim 7 , wherein decomposition and removal of the resin (A) is carried out by heating at 50° C. or higher and 300° C. or lower.

16. The method for cleaning and drying a semiconductor substrate according to claim 1 , which comprises a stage of (2-1′) removing the solvent in the substituted composition solution, after the stage (2-1) and before the stage (2-2).

17. The method for cleaning and drying a semiconductor substrate according to claim 2 , which comprises a stage of (2-1′) removing the solvent in the substituted composition solution, after the stage (2-1) and before the stage (2-2).

18. The method for cleaning and drying a semiconductor substrate according to claim 3 , which comprises a stage of (2-1′) removing the solvent in the substituted composition solution, after the stage (2-1) and before the stage (2-2).

19. The method for cleaning and drying a semiconductor substrate according to claim 4 , which comprises a stage of (2-1′) removing the solvent in the substituted composition solution, after the stage (2-1) and before the stage (2-2).

20. The method for cleaning and drying a semiconductor substrate according to claim 7 , which comprises a stage of (2-1′) removing the solvent in the substituted composition solution, after the stage (2-1) and before the stage (2-2).

Assignees

• Shinetsu Chemical Co

Inventors

• Ogihara Tsutomu
• Nagata Takeshi
• Hatakeyama Jun
• Kori Daisuke

Classifications

• H10P70/20

  Cleaning during device manufacture · CPC title

• H10P70/27 Primary

  during, before or after processing of conductive materials, e.g. polysilicon or amorphous silicon layers · CPC title

• H01L21/02068 Primary

  Electricity · mapped topic

• B81C1/00912

  Treatments or methods for avoiding stiction of flexible or moving parts of MEMS · CPC title

• H01L21/02057

  Electricity · mapped topic