Method of forming crystalline oxides on III-V materials

Patent metadata

Field	Value
Publication number	US-10475930-B2
Application number	US-201615359480-A
Country	US
Kind code	B2
Filing date	Nov 22, 2016
Priority date	Aug 17, 2016
Publication date	Nov 12, 2019
Grant date	Nov 12, 2019

Abstract

A metal oxide semiconductor field effect transistor (MOSFET) includes a substrate having a source region, a drain region, and a channel region between the source region and the drain region, the substrate having an epitaxial III-V material that includes three elements thereon, a source electrode over the source region, a drain electrode over the drain region, and a crystalline oxide layer including an oxide formed on the epitaxial III-V material in the channel region, the epitaxial III-V material including three elements.

First claim

What is claimed is:

1. A method of forming a crystalline oxide on a III-V material, the method comprising:
providing a substrate;
forming a III-V material comprising three elements on the substrate by epitaxy; and
forming a crystalline oxide layer comprising an oxide on the III-V material, the step of forming the crystalline oxide layer including removing Ga 2 O 3 (Ga3+), removing In 2 O (In1+) and removing As 2 O 3 (As3+) to form a (3×2)-O Ga 2 O oxide in the crystalline oxide layer.

2. A method of forming a crystalline oxide on a III-V material, the method comprising:
providing a substrate;
forming a III-V material comprising three elements on the substrate by epitaxy;
forming a crystalline oxide layer comprising an oxide on the III-V material; and
removing Ga 2 O 3 (Ga3+), removing In 2 O (In1+) and removing As 2 O 3 (As3+) to form a (3×2)-O Ga 2 O oxide in the crystalline oxide layer;
wherein removing Ga 2 O 3 (Ga3+), removing In 2 O (In1+), and removing As 2 O 3 (As3+) comprises annealing the substrate in atomic hydrogen at about 200° C. to about 400° C. for about 1 minute to about 10 minutes.

3. A method of forming a crystalline oxide on a III-V material, the method comprising:
providing a substrate;
forming a III-V material comprising three elements on the substrate by epitaxy;
forming a crystalline oxide layer comprising an oxide on the III-V material; and
adding Ga1+ to form a (3×2)-O oxide in the crystalline oxide layer.

4. A method of forming a crystalline oxide on a III-V material, the method comprising:
providing a substrate;
forming a III-V material comprising three elements on the substrate by epitaxy; and
forming a crystalline oxide layer comprising an oxide on the III-V material;
removing Ga 2 O 3 (Ga3+), removing In 2 O (In1+), and removing As 2 O 3 (As3+), such that Ga 2 O (Ga1+) remains in a crystalline manner to form a (3×2)-O oxide in the crystalline oxide layer.

5. A method of forming a crystalline oxide on a III-V material, the method comprising:
providing a substrate;
forming a III-V material comprising three elements on the substrate by epitaxy;
forming a crystalline oxide layer comprising an oxide on the III-V material; and
annealing the substrate in atomic hydrogen to remove Ga 2 O 3 (Ga3+) oxide from the crystalline oxide layer.

6. The method of claim 5 , wherein the annealing the substrate in atomic hydrogen comprises annealing in a range of about 200° C. to about 400° c. in a range of about 1 minute to about 10 minutes.

7. The method of claim 6 , wherein annealing the substrate in atomic hydrogen comprises annealing the substrate in atomic hydrogen or in atomic deuterium at a temperature of about 200° C. to about 400° c.

Assignees

• Samsung Electronics Co Ltd
• Univ Texas

Inventors

• Wang Wei-E
• Rodder Mark S
• Wallace Robert M
• Qin Xiaoye

Classifications

• H10P14/6938

  the material containing at least one metal element, e.g. metal oxides, metal oxynitrides or metal oxycarbides · CPC title

• H10P14/6349

  Deposition of epitaxial materials · CPC title

• H01L29/78681 Primary

  Electricity · mapped topic

• H01L29/7869

  Electricity · mapped topic

• H01L21/02172

  Electricity · mapped topic