Metal oxide semiconductor field effect transistor with crystalline oxide layer on a III-V material
US-11081590-B2 · Aug 3, 2021 · US
Wallace Robert M is listed as an inventor on 8 patents in our database. Major assignees and classification codes are summarized below.
| Metric | Value |
|---|---|
| Inventor | Wallace Robert M |
| Total patents | 8 |
| First publication | Aug 10, 2017 |
| Latest publication | Aug 3, 2021 |
Publications ranked by popularity score, then publication date.
US-11081590-B2 · Aug 3, 2021 · US
US-10731546-B2 · Aug 4, 2020 · US
US-2020035838-A1 · Jan 30, 2020 · US
US-10475930-B2 · Nov 12, 2019 · US
US-2018223725-A1 · Aug 9, 2018 · US
US-2018053859-A1 · Feb 22, 2018 · US
US-9812568-B2 · Nov 7, 2017 · US
US-2017229576-A1 · Aug 10, 2017 · US
Latest publications not already listed above.
No data yet.
Companies most often associated with this inventor's publications.
| Assignee | Patents |
|---|---|
| Univ Texas | 5 |
| Samsung Electronics Co Ltd | 4 |
| Borgwarner Inc | 2 |
Most common classification codes across this inventor's patents.
| CPC | Patents |
|---|---|
| H10D30/6757 | 6 |
| H10D30/675 | 6 |
| H10P14/6938 | 4 |
| H10P14/6349 | 4 |
| H01L29/04 | 4 |