Peeling method, display device, module, and electronic device

US10475820B2 · US · B2

Patent metadata
FieldValue
Publication numberUS-10475820-B2
Application numberUS-201816143970-A
CountryUS
Kind codeB2
Filing dateSep 27, 2018
Priority dateMay 18, 2016
Publication dateNov 12, 2019
Grant dateNov 12, 2019

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  1. Title

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  2. Abstract

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  3. Assignees and inventors

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  4. Key dates

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  5. First independent claim

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  6. CPC / IPC classifications

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  7. Citations and related patents

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Abstract

Official abstract text for this publication.

To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second region; forming a transistor including an oxide semiconductor in a channel formation region over the first region in the resin layer; forming a conductive layer over the second region in the resin layer; and irradiating the resin layer with laser light to separate the transistor and the formation substrate.

First claim

Opening claim text (preview).

What is claimed is: 1. A display device comprising: a resin layer comprising an opening; an insulating layer over the resin layer and comprising an opening; a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer; a conductive layer over the insulating layer; and a display element electrically connected to the transistor, wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer, and wherein at least part of the conductive layer is exposed in the opening of the resin layer. 2. The display device according to claim 1 , wherein the resin layer comprises polyimide. 3. The display device according to claim 1 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm. 4. The display device according to claim 1 , wherein the conductive layer comprises an oxide conductive layer. 5. The display device according to claim 1 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element. 6. The display device according to claim 1 , wherein an exposed surface of the resin layer is positioned on an inner side than an exposed surface of the conductive layer. 7. A module comprising: the display device according to claim 1 ; and a circuit board, wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer. 8. An electronic device comprising: the module according to claim 7 ; and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. 9. The display device according to claim 1 , wherein an exposed surface of the resin layer is positioned on an outer side than an exposed surface of the conductive layer. 10. A display device comprising: a resin layer comprising an opening; an insulating layer over the resin layer and comprising an opening; a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer; a conductive layer over the insulating layer; and a display element electrically connected to the transistor, wherein the insulating layer covers a periphery of the opening of the resin layer, wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer, and wherein at least part of the conductive layer is exposed in the opening of the resin layer. 11. The display device according to claim 10 , wherein the resin layer comprises polyimide. 12. The display device according to claim 10 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm. 13. The display device according to claim 10 , wherein the conductive layer comprises an oxide conductive layer. 14. The display device according to claim 10 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element. 15. The display device according to claim 10 , wherein an exposed surface of the resin layer is positioned on an inner side than an exposed surface of the conductive layer. 16. The display device according to claim 10 , wherein an exposed surface of the resin layer is positioned on an outer side than an exposed surface of the conductive layer. 17. A module comprising: the display device according to claim 10 ; and a circuit board, wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer. 18. An electronic device comprising: the module according to claim 17 ; and at least one of an antenna, a battery, a housing, a camera, a speaker, a microphone, and an operation button. 19. A display module comprising: a circuit board; a resin layer comprising an opening; an insulating layer over the resin layer and comprising an opening; a transistor comprising an oxide semiconductor in a channel formation region over the insulating layer; a conductive layer over the insulating layer; and a display element electrically connected to the transistor, wherein the conductive layer overlaps with the opening of the insulating layer and the opening of the resin layer, wherein the circuit board overlaps with the conductive layer and the opening of the resin layer, and wherein the circuit board is electrically connected to the conductive layer through the opening of the resin layer. 20. The display module according to claim 19 , wherein the resin layer comprises polyimide. 21. The display module according to claim 19 , wherein a thickness of the resin layer is greater than or equal to 0.1 μm and less than or equal to 3 μm. 22. The display module according to claim 19 , wherein the conductive layer comprises an oxide conductive layer. 23. The display module according to claim 19 , wherein the oxide semiconductor of the transistor and the conductive layer comprise the same metal element. 24. The display device according to claim 19 , wherein a surface of the circuit board side of the resin layer is positioned on an inner side than a surface of the circuit board side of the conductive layer. 25. The display device according to claim 19 , wherein a surface of the circuit board side of the resin layer is positioned on an outer side than a surface of the circuit board side of the conductive layer.

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What does patent US10475820B2 cover?
To provide a peeling method that achieves low cost and high mass productivity. The peeling method includes the steps of: forming a first layer with a photosensitive material over a formation substrate; forming a first region and a second region having a smaller thickness than the first region in the first layer by photolithography to form a resin layer having the first region and the second reg…
Who is the assignee on this patent?
Semiconductor Energy Lab
What technology area does this patent fall under?
Primary CPC classification H01L27/1225. Mapped technology areas include Electricity.
When was this patent published?
Publication date Tue Nov 12 2019 00:00:00 GMT+0000 (Coordinated Universal Time) (B2). Legal status and post-grant events are not shown on this page.
What related patents are in patentsdb?
We list 12 related publications on this page (citations in our corpus or others sharing the same primary CPC).