Display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9559317-B2
Application number	US-201615145260-A
Country	US
Kind code	B2
Filing date	May 3, 2016
Priority date	Dec 2, 2013
Publication date	Jan 31, 2017
Grant date	Jan 31, 2017

Abstract

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

First claim

What is claimed is:

1. A processing apparatus for peeling an organic resin layer from a substrate, the processing apparatus comprising:
a laser oscillator configured to emit a laser light;
an optical system configured to extend the laser light;
a mirror configured to reflect the laser light; and
a lens configured to condense the laser light into a linear beam,
wherein the mirror is provided between the optical system and the lens,
wherein a reflective surface of the mirror is inclined so that a traveling direction of the laser light is directed toward a first surface of the substrate,
wherein the processing apparatus is configured to irradiate the organic resin layer with the linear beam,
wherein the organic resin layer is formed on a second surface of the substrate, and
wherein the linear beam enters the organic resin layer through the first surface and the second surface of the substrate.

2. The processing apparatus according to claim 1 , wherein a width of the linear beam at the first surface of the substrate is larger than a width of the linear beam at the second surface of the substrate.

3. The processing apparatus according to claim 1 , wherein the laser oscillator is included in an excimer laser device.

4. The processing apparatus according to claim 1 , wherein a wavelength of the laser light is 308 nm or longer.

5. The processing apparatus according to claim 1 , wherein the laser light is a pulsed laser light.

6. The processing apparatus according to claim 1 , wherein the optical system is configured to extend the laser light.

7. The processing apparatus according to claim 1 , wherein the optical system is configured to synthesize a plurality of laser light.

8. The processing apparatus according to claim 1 ,
wherein the laser light has a width and a length larger than the width on the lens, and
wherein an entirety of the laser light in the length direction is located on an inner side than both edges of the lens.

9. The processing apparatus according to claim 1 , wherein the processing apparatus comprises a plurality of laser oscillators.

10. The processing apparatus according to claim 1 , wherein a length of the linear beam is longer than or equal to one side of the substrate.

11. A processing apparatus for peeling an organic resin layer from a substrate, the processing apparatus comprising:
a laser oscillator configured to emit a laser light;
an optical system configured to extend the laser light;
a mirror configured to reflect the laser light; and
a lens configured to condense the laser light into a linear beam,
wherein the mirror is provided between the optical system and the lens,
wherein a reflective surface of the mirror is inclined so that a traveling direction of the laser light is directed toward a first surface of the substrate,
wherein the processing apparatus is configured to irradiate the organic resin layer with the linear beam,
wherein the organic resin layer is formed on a second surface of the substrate,
wherein the linear beam enters the organic resin layer through the first surface and the second surface of the substrate, and
wherein the processing apparatus is configured to move the substrate relative to the linear beam.

12. The processing apparatus according to claim 11 , wherein a width of the linear beam at the first surface of the substrate is larger than a width of the linear beam at the second surface of the substrate.

13. The processing apparatus according to claim 11 , wherein the laser oscillator is included in an excimer laser device.

14. The processing apparatus according to claim 11 , wherein a wavelength of the laser light is 308 nm or longer.

15. The processing apparatus according to claim 11 , wherein the laser light is a pulsed laser light.

16. The processing apparatus according to claim 11 , wherein the optical system is configured to extend the laser light.

17. The processing apparatus according to claim 11 , wherein the optical system is configured to synthesize a plurality of laser light.

18. The processing apparatus according to claim 11 ,
wherein the laser light has a width and a length larger than the width on the lens, and
wherein an entirety of the laser light in the length direction is located on an inner side than both edges of the lens.

19. The processing apparatus according to claim 11 , wherein the processing apparatus comprises a plurality of laser oscillators.

20. The processing apparatus according to claim 11 , wherein a length of the linear beam is longer than or equal to one side of the substrate.

21. A processing apparatus for peeling an organic resin layer from a substrate, the processing apparatus comprising:
a laser oscillator configured to emit a laser light;
an optical system configured to extend the laser light; and
a lens configured to condense the laser light into a linear beam,
wherein the processing apparatus is configured to irradiate a processing region with the linear beam,
wherein the processing region includes an interface between the organic resin layer and the substrate, and
wherein the linear beam enters the processing region through the substrate.

22. The processing apparatus according to claim 21 , wherein the laser oscillator is included in an excimer laser device.

23. The processing apparatus according to claim 21 , wherein a wavelength of the laser light is 308 nm or longer.

24. The processing apparatus according to claim 21 , wherein the laser light is a pulsed laser light.

25. The processing apparatus according to claim 21 ,
wherein the laser light has a width and a length larger than the width on the lens, and
wherein an entirety of the laser light in the length direction is located on an inner side than both edges of the lens.

26. The processing apparatus according to claim 21 , wherein a length of the linear beam is longer than or equal to one side of the substrate.

27. The processing apparatus according to claim 21 , wherein the substrate is a glass substrate.

28. A processing apparatus for peeling an organic resin layer from a substrate, the processing apparatus comprising:
a plurality of laser oscillators configured to emit a plurality of laser light;
an optical system configured to synthesize the plurality of laser light and extend the synthesized laser light; and
a lens configured to condense the synthesized laser light into a linear beam,
wherein the processing apparatus is configured to irradiate a processing region with the linear beam,
wherein the processing region includes an interface between the organic resin layer and the substrate, and
wherein the linear beam enters the processing region through the substrate.

29. The processing apparatus according to claim 28 , wherein the plurality of laser oscillators is included in an excimer laser device.

30. The processing apparatus according to claim 28 , wherein a wavelength of the laser light is 308 nm or longer.

31. The processing apparatus according to claim 28 , wherein the laser light is a pulsed laser light.

32. The processing apparatus according to claim 28 ,
wherein the synthesized laser light has a width and a length larger than the width on the lens, and
wherein an entirety of the synthesized laser light in the length direction is located on an inner side than b

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Ohno Masakatsu
• Adachi Hiroki
• Idojiri Satoru
• Takeshima Koichi

Classifications

• B23K26/083

  Devices involving movement of the workpiece in at least one axial direction · CPC title

• B23K26/0643

  comprising mirrors · CPC title

• B23K26/0622

  by shaping pulses · CPC title

• Y02E10/549

  Organic PV cells · CPC title

• B23K26/04

  Automatically aligning, aiming or focusing the laser beam, e.g. using the back-scattered light · CPC title