Display device and method for manufacturing the same

Patent metadata

Field	Value
Publication number	US-9437831-B2
Application number	US-201414553251-A
Country	US
Kind code	B2
Filing date	Nov 25, 2014
Priority date	Dec 2, 2013
Publication date	Sep 6, 2016
Grant date	Sep 6, 2016

Abstract

A first organic resin layer is formed over a first substrate; a first insulating film is formed over the first organic resin layer; a first element layer is formed over the first insulating film; a second organic resin layer is formed over a second substrate; a second insulating film is formed over the second organic resin layer; a second element layer is formed over the second insulating film; the first substrate and the second substrate are bonded; a first separation step in which adhesion between the first organic resin layer and the first substrate is reduced; the first organic resin layer and a first flexible substrate are bonded with a first bonding layer; a second separation step in which adhesion between the second organic resin layer and the second substrate is reduced; and the second organic resin layer and a second flexible substrate are bonded with a second bonding layer.

First claim

The invention claimed is:

1. A method for manufacturing a display device, the method comprising the steps of:
forming a first organic resin layer over a first substrate;
forming a first insulating film over the first organic resin layer;
forming a first element layer over the first insulating film;
forming a second organic resin layer over a second substrate;
forming a second insulating film over the second organic resin layer;
forming a second element layer over the second insulating film;
bonding the first substrate and the second substrate so as to enclose the first element layer and the second element layer;
separating the first substrate from the first organic resin layer by reducing adhesion between the first organic resin layer and the first substrate;
bonding the first organic resin layer and a first flexible substrate with a first bonding layer;
separating the second substrate from the second organic resin layer by reducing adhesion between the second organic resin layer and the second substrate; and
bonding the second organic resin layer and a second flexible substrate with a second bonding layer,
wherein the first element layer comprises a pixel portion and a circuit portion,
wherein the pixel portion comprises a display element and a first transistor comprising a first oxide semiconductor layer,
wherein the circuit portion comprises a second transistor comprising a second oxide semiconductor layer, and
wherein the second element layer comprises a coloring layer and a light-blocking layer.

2. The method for manufacturing a display device according to claim 1 , wherein each of the first organic resin layer and the second organic resin layer comprises at least one of an epoxy resin, an acrylic resin, a polyimide resin, a polyamide resin, and a polyamide-imide resin.

3. The method for manufacturing a display device according to claim 1 , wherein the reduction of adhesion between the first organic resin layer and the first substrate and the reduction of adhesion between the second organic resin layer and the second substrate are performed by irradiation with an excimer laser beam.

4. The method for manufacturing a display device according to claim 3 , wherein the excimer laser beam is obtained by synthesizing laser beams outputted from a plurality of oscillators.

5. The method for manufacturing a display device according to claim 1 , wherein the first flexible substrate is in contact with a curved surface of a roller at the step of separating the second substrate from the second organic resin layer.

6. The method for manufacturing a display device according to claim 1 , wherein each of the first insulating film and the second insulating film comprises at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film.

7. The method for manufacturing a display device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises an In-M-Zn oxide (M is at least one of Al, Ti, Ga, Y, Zr, La, Ce, Nd, and Hf).

8. The method for manufacturing a display device according to claim 1 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises crystals whose c-axes are aligned.

9. The method for manufacturing a display device according to claim 1 ,
wherein the first oxide semiconductor layer is a single layer, and
wherein the second oxide semiconductor layer is a multilayer.

10. The method for manufacturing a display device according to claim 1 , wherein the first oxide semiconductor layer has the same composition as a layer in contact with a gate insulating film of the second transistor.

11. The method for manufacturing a display device according to claim 1 , wherein the display element is an organic EL element.

12. A method for manufacturing a display device, the method comprising the steps of:
forming a first organic resin layer over a first substrate;
forming a first insulating film over the first organic resin layer;
forming a first element layer over the first insulating film;
forming a second organic resin layer over a second substrate;
forming a second insulating film over the second organic resin layer;
forming a second element layer over the second insulating film;
bonding the first substrate and the second substrate so as to enclose the first element layer and the second element layer;
separating the first substrate from the first organic resin layer by reducing adhesion between the first organic resin layer and the first substrate;
bonding the first organic resin layer and a first flexible substrate with a first bonding layer;
separating the second substrate from the second organic resin layer by reducing adhesion between the second organic resin layer and the second substrate; and
bonding the second organic resin layer and a second flexible substrate with a second bonding layer,
wherein the first element layer comprises a pixel portion and a circuit portion,
wherein the pixel portion comprises a display element and a first transistor comprising a first oxide semiconductor layer, and
wherein the circuit portion comprises a second transistor comprising a second oxide semiconductor layer.

13. The method for manufacturing a display device according to claim 12 , wherein each of the first organic resin layer and the second organic resin layer comprises at least one of an epoxy resin, an acrylic rein, a polyimide resin, a polyamide resin, and a polyamide-imide resin.

14. The method for manufacturing a display device according to claim 12 , wherein the reduction of adhesion between the first organic resin layer and the first substrate and the reduction of adhesion between the second organic resin layer and the second substrate are performed by irradiation with an excimer laser beam.

15. The method for manufacturing a display device according to claim 14 , wherein the excimer laser beam is obtained by synthesizing laser beams outputted from a plurality of oscillators.

16. The method for manufacturing a display device according to claim 12 , wherein the first flexible substrate is in contact with a curved surface of a roller at the step of separating the second substrate from the second organic resin layer.

17. The method for manufacturing a display device according to claim 12 , wherein each of the first insulating film and the second insulating film comprises at least one of a silicon oxide film, a silicon oxynitride film, a silicon nitride film, and a silicon nitride oxide film.

18. The method for manufacturing a display device according to claim 12 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises an ln-M-Zn oxide (M is at least one of Al, Ti, Ga, Y, Zr, La, Ce, Nd, and Hf).

19. The method for manufacturing a display device according to claim 12 , wherein each of the first oxide semiconductor layer and the second oxide semiconductor layer comprises crystals whose c-axes are aligned.

20. The method for manufacturing a display device according to claim 12 ,
wherein the first oxide semiconductor layer is a single layer, and
wherein the second oxide semiconductor layer is a multilayer.

21. The method for manufacturing a display device according to claim 12 , wherein the first oxide semiconductor layer has the same composition as a layer in contact with a gate insulating film of the second transistor.

22. The method for ma

Assignees

• Semiconductor Energy Lab

Inventors

• Yamazaki Shunpei
• Ohno Masakatsu
• Adachi Hiroki
• Idojiri Satoru
• Takeshima Koichi

Classifications

• G09F9/33

  being semiconductor devices, e.g. diodes · CPC title

• B23K26/083

  Devices involving movement of the workpiece in at least one axial direction · CPC title

• B23K26/0622

  by shaping pulses · CPC title

• B23K26/0617

  and with spots spaced along the common axis · CPC title

• B23K26/0643

  comprising mirrors · CPC title