Semiconductor structure cutting process and structures formed thereby

Patent metadata

Field	Value
Publication number	US-10325912-B2
Application number	US-201715797626-A
Country	US
Kind code	B2
Filing date	Oct 30, 2017
Priority date	Oct 30, 2017
Publication date	Jun 18, 2019
Grant date	Jun 18, 2019

Abstract

Methods of cutting gate structures and fins, and structures formed thereby, are described. In an embodiment, a substrate includes first and second fins and an isolation region. The first and second fins extend longitudinally parallel, with the isolation region disposed therebetween. A gate structure includes a conformal gate dielectric over the first fin and a gate electrode over the conformal gate dielectric. A first insulating fill structure abuts the gate structure and extends vertically from a level of an upper surface of the gate structure to at least a surface of the isolation region. No portion of the conformal gate dielectric extends vertically between the first insulating fill structure and the gate electrode. A second insulating fill structure abuts the first insulating fill structure and an end sidewall of the second fin. The first insulating fill structure is disposed laterally between the gate structure and the second insulating fill structure.

First claim

What is claimed is:

1. A method comprising:
forming a dummy gate structure extending over a fin on a substrate;
replacing the dummy gate structure with a replacement gate structure; and
after replacing the dummy gate structure with the replacement gate structure, cutting the fin.

2. The method of claim 1 further comprising cutting the replacement gate structure before cutting the fin.

3. The method of claim 2 , wherein cutting the replacement gate structure comprises:
removing a portion of the replacement gate structure; and
forming a filler insulating material between remaining sections of the replacement gate structure where the portion of the replacement gate structure was removed.

4. The method of claim 2 , wherein:
cutting the replacement gate structure comprises removing a portion of the replacement gate structure from between a first section of the replacement gate structure and a second section of the replacement gate structure, wherein the first section of the replacement gate structure is over the fin; and
cutting the fin comprises:
removing the first section of the replacement gate structure from over the fin; and
removing a portion of the fin that was underlying the first section of the replacement gate structure.

5. The method of claim 1 , wherein cutting the fin comprises:
removing a portion of the fin; and
forming a filler insulating material between remaining sections of the fin where the portion of the fin was removed.

6. The method of claim 5 , wherein the fin protrudes above an isolation region on the substrate, and wherein removing the portion of the fin further includes removing a portion of the substrate below the portion of the fin that was removed to a depth below the isolation region.

7. The method of claim 1 , wherein the fin includes a stressed material.

8. A method comprising:
forming a first fin and a second fin on a substrate;
forming a first dummy gate structure extending over the first fin and the second fin;
forming a dielectric layer over the first fin and the second fin;
after forming the dielectric layer, replacing the first dummy gate structure with a first replacement gate structure;
cutting the first replacement gate structure in a region laterally between the first fin and the second fin, a first section of the first replacement gate structure being over the first fin, and a second section of the first replacement gate structure being over the second fin;
removing the first section of the first replacement gate structure over the first fin; and
cutting the first fin where the first section of the first replacement gate structure was removed.

9. The method of claim 8 , wherein cutting the first replacement gate structure comprises:
etching the first replacement gate structure in the region laterally between the first fin and the second fin, the etching forming a recess; and
filling the recess with an insulating material, the insulating material being disposed between the first section of the first replacement gate structure and the second section of the first replacement gate structure before the first section of the first replacement gate structure is removed.

10. The method of claim 8 , wherein cutting the first fin comprises:
etching the first fin where the first section of the first replacement gate structure was removed, the etching forming a recess extending to a depth below an isolation region on the substrate disposed between the first fin and the second fin; and
filling the recess with an insulating material, the insulating material being disposed between a first section of the first fin and a second section of the first fin.

11. The method of claim 8 , wherein each of the first fin and the second fin includes a stressed material.

12. The method of claim 8 further comprising:
forming a second dummy gate structure extending over the first fin and the second fin;
replacing the second dummy gate structure with a second replacement gate structure; and
cutting the second replacement gate structure in the region laterally between the first fin and the second fin, a first section of the second replacement gate structure being over the first fin, and a second section of the second replacement gate structure being over the second fin, wherein cutting the first replacement gate structure and the second replacement gate structure comprises:
simultaneously etching the first replacement gate structure and the second replacement gate structure in the region laterally between the first fin and the second fin, the etching forming a first continuous recess in the region; and
filling the first continuous recess with a first insulating material, the first insulating material being disposed between the first section of the first replacement gate structure and the second section of the first replacement gate structure before the first section of the first replacement gate structure is removed, and between the first section of the second replacement gate structure and the second section of the second replacement gate structure; and

wherein cutting the first fin comprises:
etching the first fin where the first section of the first replacement gate structure was removed, the etching forming a second recess extending to a depth below an isolation region on the substrate disposed between the first fin and the second fin; and
filling the second recess with a second insulating material, the second insulating material being disposed between a first section of the first fin and a second section of the first fin; and

wherein after cutting the first fin, the first section of the second replacement gate structure is over the first fin, the second section of the first replacement gate structure is over the second fin, and the second section of the second replacement gate structure is over the second fin.

13. A method comprising:
forming a fin on a substrate;
forming a first isolation region and a second isolation region on the substrate, the fin being interposed between the first isolation region and the second isolation region;
forming a dummy gate structure along sidewalls and a topmost surface of the fin, the dummy gate structure extending along a topmost surface of the first isolation region and a topmost surface of the second isolation region;
replacing the dummy gate structure with a replacement gate structure;
patterning the replacement gate structure to form a first trench and a second trench in the replacement gate structure, the first trench exposing the first isolation region and the second trench exposing the second isolation region;
filling the first trench and the second trench with a first insulating material to form a first insulating fill structure in the first trench and a second insulating fill structure in the second trench;
removing a first portion of the replacement gate structure between the first insulating fill structure and the second insulating fill structure to expose a first portion of the fin underlying the first portion of the replacement gate structure; and
removing the first portion of the fin to form a recess, the recess extending between the first isolation region and the second isolation region and into the substrate.

14. The method of claim 13 further comprising overfilling the recess with a second insulating material, the second insulating material extending above the first insulating fill structure and the second insulating fill structure.

15. The method of claim 14 further comprising planarizing the second insulating material to remove a portion of the second insulating material extending above the firs

Assignees

• Taiwan Semiconductor Mfg Co Ltd

Inventors

• Chen Ryan Chia-Jen
• Yin Li-Wei
• Pan Tzu-Wen
• Chen Yi-Chun
• Chang Cheng-Chung
• Hsu Shao-Hua
• Lin Yu-Hsien
• Chang Ming-Ching

Classifications

• H10P95/062

  involving a dielectric removal step · CPC title

• H10P52/403

  of conductive or resistive materials · CPC title

• H10P50/695

  characterised by the process involved to create the mask, e.g. lift-off masks or sidewalls or to modify the mask · CPC title

• H10P50/264

  by chemical means · CPC title

• H10P50/242

  of Group IV materials · CPC title